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Magnetic and electrical properties of (Pu,Lu)Pd3

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 Added by Manh Duc Le
 Publication date 2010
  fields Physics
and research's language is English




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We present measurements of the magnetic susceptibility, heat capacity and electrical resistivity of Pu$_{1-x}$Lu$_x$Pd$_3$, with $x$=0, 0.1, 0.2, 0.5, 0.8 and 1. PuPd$_3$ is an antiferromagnetic heavy fermion compound with $T_N=24$~K. With increasing Lu doping, both the Kondo and RKKY interaction strengths fall, as judged by the Sommerfeld coefficient $gamma$ and Neel temperature $T_N$. Fits to a crystal field model of the resistivity also support these conclusions. The paramagnetic effective moment $mu_{mathrm{eff}}$ increases with Lu dilution, indicating a decrease in the Kondo screening. In the highly dilute limit, $mu_{mathrm{eff}}$ approaches the value predicted by intermediate coupling calculations. In conjunction with an observed Schottky peak at $sim$60~K in the magnetic heat capacity, corresponding to a crystal field splitting of $sim$12~meV, a mean-field intermediate coupling model with nearest neighbour interactions has been developed.



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We have made an extensive study of the magnetic and electrical properties of double-hexagonal closepacked NpPd3 and a range of U(1-x)Np(x)Pd3 compounds with x=0.01, 0.02, 0.05, and 0.50 using magnetization, magnetic susceptibility, electrical resistivity, and heat capacity measurements on polycrystalline samples, performed in the temperature range 2-300 K and in magnetic fields up to 9 T. Two transitions are observed in NpPd3 at T=10 and 30 K. Dilute Np samples (x<0.05) exhibit quadrupolar transitions, with the transition temperatures reduced from those of pure UPd3.
The influence of vacancies and interstitial atoms on magnetism in Pu has been considered in frames of the Density Functional Theory (DFT). The relaxation of crystal structure arising due to different types of defects was calculated using the molecular dynamic method with modified embedded atom model (MEAM). The LDA+U+SO (Local Density Approximation with explicit inclusion of Coulomb and spin-orbital interactions) method in matrix invariant form was applied to describe correlation effects in Pu with these types of defects. The calculations show that both vacancies and interstitials give rise to local moments in $f$-shell of Pu in good agreement with experimental data for annealed Pu. Magnetism appears due to destroying of delicate balance between spin-orbital and exchange interactions.
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We have measured the electric resistivity, magnetoresistance, magnetic susceptibility and magnetization of the new Kondo-lattice compound Ce3Pd4Ge4. The electrical resistivity exhibits a rapid drop at temperatures below 6 K, while the magnetic susceptibility does not show any corresponding anomaly at that temperature. This phenomenon is similar to that of Ce3Pd20Ge6 which shows quadrupolar interation. We suggest that there is the possibility of quadrupolar interaction in the orthorhombic 4f-electron system Ce3Pd4Ge4. In addition, it is realized that the spin-dependent scattering effect is responsible for the magnetotransport.
We present magnetization, specific heat, resistivity, and Hall effect measurements on the cubic B20 phase of MnGe and CoGe and compare to measurements of isostructural FeGe and electronic structure calculations. In MnGe, we observe a transition to a magnetic state at $T_c=275$ K as identified by a sharp peak in the ac magnetic susceptibility, as well as second phase transition at lower temperature that becomes apparent only at finite magnetic field. We discover two phase transitions in the specific heat at temperatures much below the Curie temperature one of which we associate with changes to the magnetic structure. A magnetic field reduces the temperature of this transition which corresponds closely to the sharp peak observed in the ac susceptibility at fields above 5 kOe. The second of these transitions is not affected by the application of field and has no signature in the magnetic properties or our crystal structure parameters. Transport measurements indicate that MnGe is metal with a negative magnetoresistance similar to that seen in isostructural FeGe and MnSi. Hall effect measurements reveal a carrier concentration of about 0.5 carriers per formula unit also similar to that found in FeGe and MnSi. CoGe is shown to be a low carrier density metal with a very small, nearly temperature independent diamagnetic susceptibility.
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