Transport properties of a superconductor-semiconductor-superconductor (S-Sm-S) junction with superlattice structure are investigated. Differential resistance as a function of voltage shows oscillatory behavior under the irradiation of radio-frequency (RF) waves with the specific frequency of 1.77 GHz regardless of the superconducting materials and the junction lengths. Experimental data are quantitatively explained in terms of the coupling of superconducting quasiparticles with long-wavelength acoustic phonons indirectly excited by the RF waves. We propose that the strong coupling causes the formation of novel composite particles, Andreev polarons.
We present a theoretical study of electronic transport in a hybrid junction consisting of an excitonic insulator sandwiched between a normal and a superconducting electrode. The normal region is described as a two-band semimetal and the superconducting lead as a two-band superconductor. In the excitonic insulator region, the coupling between carriers in the two bands leads to an excitonic condensate and a gap $Gamma$ in the quasiparticle spectrum. We identify four different scattering processes at both interfaces. Two types of normal reflection, intra- and inter-band; and two different Andreev reflections, one retro-reflective within the same band and one specular-reflective between the two bands. We calculate the differential conductance of the structure and show the existence of a minimum at voltages of the order of the excitonic gap. Our findings are useful towards the detection of the excitonic condensate and provide a plausible explanation of recent transport experiments on HgTe quantum wells and InAs/GaSb bilayer systems.
The superconducting proximity effect has played an important role in recent work searching for Majorana modes in thin semiconductor devices. Using transport measurements to quantify the changes in the semiconductor caused by the proximity effect provides a measure of dynamical processes such as screening and scattering. However, in a two terminal measurement the resistance due to the interface conductance is in series with resistance of transport in the semiconductor. Both of these change, and it is impossible to separate them without more information. We have devised a new three terminal device that provides two resistance measurements that are sufficient to extract both the junction conductance and the two dimensional sheet resistance under the superconducting contact. We have compared junctions between Nb and InAs and Nb and 30% InGaAs all grown before being removed from the ultra high vacuum molecular beam epitaxy growth system. The most transparent junctions are to InAs, where the transmission coefficient per Landauer mode is greater than 0.6. Contacts made with ex-situ deposition are substantially more opaque. We find that for the most transparent junctions, the largest fractional change as the temperature is lowered is to the resistance of the semiconductor.
Using the tight binding model and the non-equilibrium Green function method, we study Andreev reflection in graphene-superconductor junction, where graphene has two nonequal Dirac Cones split in energy and therefore time reversal symmetry is broken. Due to the anti-chiral edge states of the current graphene model, an incident electron travelling along the edges makes distinct contribution to Andreev reflections. In a two-terminal device, because Andreev retro-reflection is not allowed for just the anti-chiral edges, in this case the mutual scattering between edge and bulk states is necessary, which leads that the coefficient of Andreev retro-reflection is always symmetrical about the incident energy. In a four-terminal junction, however, the edges are parallel to the interface of superconductor and graphene, so at the interface an incident electron travelling along the edges can be retro-reflected as a hole into bulk modes, or specularly reflected as a hole into anti-chiral edge states again. It is noted that, the coefficient of specular Andreev reflection keeps symmetric as to the incident energy of electron which is consistent with the reported results before, however the coefficient of Andreev retro-reflection shows an unexpected asymmetrical behavior due to the presence of anti-chiral edge states. Our results present some new ideas to study the anti-chiral edge modes and Andreev reflection for a graphene model with the broken time reversal symmetry.
We investigate the Josephson radiation emitted by a junction made of a quantum dot coupled to two conventional superconductors. Close to resonance, the particle-hole symmetric Andreev states that form in the junction are detached from the continuum above the superconducting gap in the leads, while a gap between them opens near the Fermi level. Under voltage bias, we formulate a stochastic model that accounts for non-adiabatic processes, which change the occupations of the Andreev states. This model allows calculating the current noise spectrum and determining the Fano factor. Analyzing the finite-frequency noise, we find that the model may exhibit either an integer or a fractional AC Josephson effect, depending on the bias voltage and the size of the gaps in the Andreev spectrum. Our results assess the limitations in using the fractional Josephson radiation as a probe of topology.
Superconductivity in topological materials has attracted a great deal of interest in both electron physics and material sciences since the theoretical predictions that Majorana fermions can be realized in topological superconductors [1-4]. Topological superconductivity could be realized in a type II, band-inverted, InAs/GaSb quantum well if it is in proximity to a conventional superconductor. Here we report observations of the proximity effect induced giant supercurrent states in an InAs/GaSb bilayer system that is sandwiched between two superconducting tantalum electrodes to form a superconductor-InAs/GaSb-superconductor junction. Electron transport results show that the supercurrent states can be preserved in a surprisingly large temperature-magnetic field (T-H) parameter space. In addition, the evolution of differential resistance in T and H reveals an interesting superconducting gap structure.