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Register a new userMagnetization dynamics of a CrO$_2$ grain studied by micro-Hall magnetometry
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Micro-Hall magnetometry is employed to study the magnetization dynamics of a single, micron-size CrO$_2$ grain. With this technique we track the motion of a single domain wall, which allows us to probe the distribution of imperfections throughout the material. An external magnetic field along the grains easy magnetization direction induces magnetization reversal, giving rise to a series of sharp jumps in magnetization. Supported by micromagnetic simulations, we identify the transition to a state with a single cross-tie domain wall, where pinning/depinning of the wall results in stochastic Barkhausen jumps.
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We report here the results of two-dimensional electron gas based micro-Hall magnetometry measurements and micromagnetic simulations of dipolar coupled nanomagnets of Ni80Fe20 arranged in a double ring-like geometry. We observe that although magnetic force microscopy images exhibit single domain like magnetic states for the nanostructures, their reversal processes may undergo complex behavior. The details of such reversal behavior is observed as specific features in micro-Hall magnetometry data which compares well with the micromagnetic simulation data.
Recently we have reported on the magnetization dynamics of a single CrO$_2$ grain studied by micro Hall magnetometry (P. Das textit{et al.}, Appl. Phys. Lett. textbf{97} 042507, 2010). For the external magnetic field applied along the grains easy magnetization direction, the magnetization reversal takes place through a series of Barkhausen jumps. Supported by micromagnetic simulations, the ground state of the grain was found to correspond to a flux closure configuration with a single cross-tie domain wall. Here, we report an analysis of the Barkhausen jumps, which were observed in the hysteresis loops for the external field applied along both the easy and hard magnetization directions. We find that the magnetization reversal takes place through only a few configuration paths in the free-energy landscape, pointing to a high purity of the sample. The distinctly different statistics of the Barkhausen jumps for the two field directions is discussed.
We report an investigation of temperature and IrMn layered thickness dependence of anomalous-Hall resistance (AHR), anisotropic magnetoresistance (AMR), and magnetization on Pt/Ir20Mn80/Y3Fe5O12 (Pt/IrMn/YIG) heterostructures. The magnitude of AHR is dramatically enhanced compared with Pt/YIG bilayers. The enhancement is much more profound at higher temperatures and peaks at the IrMn thickness of 3 nm. The observed spin-Hall magnetoresistance (SMR) in the temperature range of 10-300 K indicates that the spin current generated in the Pt layer can penetrate the entire thickness of the IrMn layer to interact with the YIG layer. The lack of conventional anisotropic magnetoresistance (CAMR) implies that the insertion of the IrMn layer between Pt and YIG efficiently suppresses the magnetic proximity effect (MPE) on induced Pt moments by YIG. Our results suggest that the dual roles of the InMn insertion in Pt/IrMn/YIG heterostructures are to block the MPE and to transport the spin current between Pt and YIG layers. We discuss possible mechanisms for the enhanced AHR.
The theory behind the electrical switching of antiferromagnets is premised on the existence of a well defined broken symmetry state that can be rotated to encode information. A spin glass is in many ways the antithesis of this state, characterized by an ergodic landscape of nearly degenerate magnetic configurations, choosing to freeze into a distribution of these in a manner that is seemingly bereft of information. In this study, we show that the coexistence of spin glass and antiferromagnetic order allows a novel mechanism to facilitate the switching of the antiferromagnet Fe$_{1/3+delta}$NbS$_2$, which is rooted in the electrically-stimulated collective winding of the spin glass. The local texture of the spin glass opens an anisotropic channel of interaction that can be used to rotate the equilibrium orientation of the antiferromagnetic state. The use of a spin glass collective dynamics to electrically manipulate antiferromagnetic spin textures has never been applied before, opening the field of antiferromagnetic spintronics to many more material platforms with complex magnetic textures.
Substrate engineering provides an opportunity to modulate the physical properties of quantum materials in thin film form. Here we report that TiSe$_2$ thin films grown on TiO$_2$ have unexpectedly large electron doping that suppresses the charge density wave (CDW) order. This is dramatically different from either bulk single crystal TiSe$_2$ or TiSe$_2$ thin films on graphene. The epitaxial TiSe$_2$ thin films can be prepared on TiO$_2$ via molecular beam epitaxy (MBE) in two ways: by conventional co-deposition using selenium and titanium sources, and by evaporating only selenium on reconstructed TiO$_2$ surfaces. Both growth methods yield atomically flat thin films with similar physical properties. The electron doping and subsequent suppression of CDW order can be explained by selenium vacancies in the TiSe$_2$ film, which naturally occur when TiO$_2$ substrates are used. This is due to the stronger interfacial bonding that changes the ideal growth conditions. Our finding provides a way to tune the chemical potential of chalcogenide thin films via substrate selection and engineering.
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