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Register a new userLarge surface conductance and two-dimensional superconductivity in microstructured crystalline topological insulators
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Controllable geometric manipulation via micromachining techniques provides a promising tool for enhancing useful topological electrical responses relevant to future applications such as quantum information science. Here we present microdevices fabricated with focused ion beam from indium-doped topological insulator Pb1-xSnxTe. With device thickness on the order of 1 {mu}m and an extremely large bulk resistivity, we achieve an unprecedented enhancement of the surface contribution to about 30% of the total conductance near room temperature. The surface contribution increases as the temperature is reduced, becoming dominant below approximately 180 K, compared to 30 K in mm-thickness crystals. In addition to the enhanced surface contribution to normal-state transport, we observe the emergence of a two-dimensional superconductivity below 6 K. Measurements of magnetoresistivity at high magnetic fields reveal a weak antilocalization behavior in the normal-state magnetoconductance at low temperature and a variation in the power-law dependence of resistivity on temperature with field. These results demonstrate that interesting electrical response relevant to practical applications can be achieved by suitable engineering of single crystals.
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Topological crystalline insulators (TCIs) are insulating materials whose topological property relies on generic crystalline symmetries. Based on first-principles calculations, we study a three-dimensional (3D) crystal constructed by stacking two-dimensional TCI layers. Depending on the inter-layer interaction, the layered crystal can realize diverse 3D topological phases characterized by two mirror Chern numbers (MCNs) ($mu_1,mu_2$) defined on inequivalent mirror-invariant planes in the Brillouin zone. As an example, we demonstrate that new TCI phases can be realized in layered materials such as a PbSe (001) monolayer/h-BN heterostructure and can be tuned by mechanical strain. Our results shed light on the role of the MCNs on inequivalent mirror-symmetric planes in reciprocal space and open new possibilities for finding new topological materials.
Thin layers of topological insulator materials are quasi-two-dimensional systems featuring a complex interplay between quantum confinement and topological band structure. To understand the role of the spatial distribution of carriers in electrical transport, we study the Josephson effect, magnetotransport, and weak anti-localization in bottom-gated thin Bi$_2$Te$_3$ topological insulator films.We compare the experimental carrier densities to a model based on the solutions of the self-consistent Schrodinger-Poisson equations and find excellent agreement. The modeling allows for a quantitative interpretation of the weak antilocalization correction to the conduction and of the critical current of Josephson junctions with weak links made from such films without any ad hoc assumptions.
The surface of a 3D topological insulator is conducting and the topologically nontrivial nature of the surface states is observed in experiments. It is the aim of this paper to review and analyze experimental observations with respect to the magnetotransport in Bi-based 3D topological insulators, as well as the superconducting transport properties of hybrid structures consisting of superconductors and these topological insulators. The helical spin-momentum coupling of the surface state electrons becomes visible in quantum corrections to the conductivity and magnetoresistance oscillations. An analysis will be provided of the reported magnetoresistance, also in the presence of bulk conductivity shunts. Special attention is given to the large and linear magnetoresistance. Superconductivity can be induced in topological superconductors by means of the proximity effect. The induced supercurrents, Josephson effects and current-phase relations will be reviewed. These materials hold great potential in the field of spintronics and the route towards Majorana devices.
We theoretically study the generic behavior of the penetration depth of the edge states in two-dimensional quantum spin Hall systems. We found that the momentum-space width of the edge-state dispersion scales with the inverse of the penetration depth. As an example of well-localized edge states, we take the Bi(111) ultrathin film. Its edge states are found to extend almost over the whole Brillouin zone. Correspondingly, the bismuth (111) 1-bilayer system is proposed to have well-localized edge states in contrast to the HgTe quantum well.
Two-dimensional (2D) topological insulators (TIs) with a large bulk band-gap are promising for experimental studies of the quantum spin Hall effect and for spintronic device applications. Despite considerable theoretical efforts in predicting large-gap 2D TI candidates, only few of them have been experimentally verified. Here, by combining scanning tunneling microscopy/spectroscopy and angle-resolved photoemission spectroscopy, we reveal that the top monolayer of ZrTe5 crystals hosts a large band gap of ~100 meV on the surface and a finite constant density-of-states within the gap at the step edge. Our first-principles calculations confirm the topologically nontrivial nature of the edge states. These results demonstrate that the top monolayer of ZrTe5 crystals is a large-gap 2D TI suitable for topotronic applications at high temperature.
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