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Register a new userObservations of temporal group delays in slow-light multiple coupled photonic crystal cavities
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We demonstrate temporal group delays in coherently-coupled high-Q multi-cavity photonic crystals, in an all-optical analogue to electromagnetically induced transparency. We report deterministic control of the group delay up to 4x the single cavity lifetime in our CMOS-fabricated room-temperature chip. Supported by three-dimensional numerical simulations and theoretical analyses, our multi-pump beam approach enables control of the multi-cavity resonances and inter-cavity phase, in both single and double transparency peaks. The standing-wave wavelength-scale photon localization allows direct scalability for chip-scale optical pulse trapping and coupled-cavity QED.
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We describe the design, fabrication, and spectroscopy of coupled, high Quality (Q) factor silicon nanobeam photonic crystal cavities. We show that the single nanobeam cavity modes are coupled into even and odd superposition modes, and we simulate the frequency and Q factor as a function of nanobeam spacing, demonstrating that a differential wavelength shift of 70 nm between the two modes is possible while maintaining Q factors greater than 10^6. For both on-substrate and free-standing nanobeams, we experimentally monitor the response of the even mode as the gap is varied, and measure Q factors as high as 200,000.
We present the integrated chip-scale tuning of multiple photonic crystal cavities. The optimized implementation allows effective and precise tuning of multiple cavity resonances (up to ~1.60 nm/mW) and inter-cavity phase (~ 0.038 pi/mW) by direct local temperature tuning on silicon nanomembranes. Through designing the serpentine metal electrodes and careful electron-beam alignment to avoid cavity mode overlap, the coupled photonic crystal L3 cavities preserve their high quality factors. The deterministic resonance and phase control enables switching between the all-optical analogue of electromagnetically-induced-transparency (EIT) to flat-top filter lineshapes, with future applications of trapping photons/photonic transistors and optoelectronic modulators.
Four-wave mixing is observed in a silicon W1 photonic crystal waveguide. The dispersion dependence of the idler conversion efficiency is measured and shown to be enhanced at wavelengths exhibiting slow group velocities. A 12-dB increase in the conversion efficiency is observed. Concurrently, a decrease in the conversion bandwidth is observed due to the increase in group velocity dispersion in the slow-light regime. The experimentally observed conversion efficiencies agree with the numerically modeled results.
We report the observations of spontaneous Raman scattering in silicon photonic crystal waveguides. Continuous-wave measurements of Stokes emission for both wavelength and power dependence is reported in single line-defect waveguides in hexagonal lattice photonic crystal silicon membranes. By utilizing the Bragg gap edge dispersion of the TM-like mode for pump enhancement and the TE-like fundamental mode-onset for Stokes enhancement, the Stokes emission was observed to increase by up to five times in the region of slow group velocity. The results show explicit nonlinear enhancement in a silicon photonic crystal slow-light waveguide device.
The threshold properties of photonic crystal quantum dot lasers operating in the slow-light regime are investigated experimentally and theoretically. Measurements show that, in contrast to conventional lasers, the threshold gain attains a minimum value for a specific cavity length. The experimental results are explained by an analytical theory for the laser threshold that takes into account the effects of slow-light and random disorder due to unavoidable fabrication imperfections. Longer lasers are found to operate deeper into the slow-light region, leading to a trade-off between slow-light induced reduction of the mirror loss and slow-light enhancement of disorder-induced losses.
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