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Register a new userMagnetoresistance in semiconductor structures with hopping conductivity: effects of random potential and generalization for the case of acceptor states
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We reconsider the theory of magnetoresistance in hopping semiconductors. First, we have shown that the random potential of the background impurities affects significantly preexponential factor of the tunneling amplitude which becomes to be a short-range one in contrast to the long-range one for purely Coulomb hopping centers. This factor to some extent suppresses the negative interference magnetoresistance and can lead to its decrease with temperature decrease which is in agreement with earlier experimental observations. We have also extended the theoretical models of positive spin magnetoresistance, in particular, related to a presence of doubly occupied states (corresponding to the upper Hubbard band) to the case of acceptor states in 2D structures. We have shown that this mechanism can dominate over classical wave-shrinkage magnetoresistance at low temperatures. Our results are in semi-quantitative agreement with experimental data.
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In one-dimensional electronic systems with strong repulsive interactions, charge excitations propagate much faster than spin excitations. Such systems therefore have an intermediate temperature range [termed the spin-incoherent Luttinger liquid (SILL) regime] where charge excitations are cold (i.e., have low entropy) whereas spin excitations are hot. We explore the effects of charge-sector disorder in the SILL regime in the absence of external sources of equilibration. We argue that the disorder localizes all charge-sector excitations; however, spin excitations are protected against full localization, and act as a heat bath facilitating charge and energy transport on asymptotically long timescales. The charge, spin, and energy conductivities are widely separated from one another. The dominant carriers of energy are neither charge nor spin excitations, but neutral phonon modes, which undergo an unconventional form of hopping transport that we discuss. We comment on the applicability of these ideas to experiments and numerical simulations.
The conductance of a quantum wire with off-diagonal disorder that preserves a sublattice symmetry (the random hopping problem with chiral symmetry) is considered. Transport at the band center is anomalous relative to the standard problem of Anderson localization both in the diffusive and localized regimes. In the diffusive regime, there is no weak-localization correction to the conductance and universal conductance fluctuations are twice as large as in the standard cases. Exponential localization occurs only for an even number of transmission channels in which case the localization length does not depend on whether time-reversal and spin rotation symmetry are present or not. For an odd number of channels the conductance decays algebraically. Upon moving away from the band center transport characteristics undergo a crossover to those of the standard universality classes of Anderson localization. This crossover is calculated in the diffusive regime.
We study the localization length of a pair of two attractively bound particles moving in a one-dimensional random potential. We show in which way it depends on the interaction potential between the constituents of this composite particle. For a pair with many bound states N the localization length is proportional to N, independently of the form of the two particle interaction. For the case of two bound states we present an exact solution for the corresponding Fokker-Planck equation and demonstrate that the localization length depends sensitively on the shape of the interaction potential and the symmetry of the bound state wave functions.
We study spatial structures of anomalously localized states (ALS) in tail regions at the critical point of the Anderson transition in the two-dimensional symplectic class. In order to examine tail structures of ALS, we apply the multifractal analysis only for the tail region of ALS and compare with the whole structure. It is found that the amplitude distribution in the tail region of ALS is multifractal and values of exponents characterizing multifractality are the same with those for typical multifractal wavefunctions in this universality class.
We predict the universal power law dependence of localization length on magnetic field in the strongly localized regime. This effect is due to the orbital quantum interference. Physically, this dependence shows up in an anomalously large negative magnetoresistance in the hopping regime. The reason for the universality is that the problem of the electron tunneling in a random media belongs to the same universality class as directed polymer problem even in the case of wave functions of random sign. We present numerical simulations which prove this conjecture. We discuss the existing experiments that show anomalously large magnetoresistance. We also discuss the role of localized spins in real materials and the spin polarizing effect of magnetic field.
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