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Register a new userImage potential states as quantum probe of graphene interfaces
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Image potential states (IPSs) are electronic states localized in front of a surface in a potential well formed by the surface projected bulk band gap on one side and the image potential barrier on the other. In the limit of a two-dimensional solid a double Rydberg series of IPSs has been predicted which is in contrast to a single series present in three-dimensional solids. Here, we confirm this prediction experimentally for mono- and bilayer graphene. The IPSs of epitaxial graphene on SiC are measured by scanning tunnelling spectroscopy and the results are compared to ab-initio band structure calculations. Despite the presence of the substrate, both calculations and experimental measurements show that the first pair of the double series of IPSs survives, and eventually evolves into a single series for graphite. Thus, IPSs provide an elegant quantum probe of the interfacial coupling in graphene systems.
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The energies of valley-orbit states in silicon quantum dots are determined by an as yet poorly understood interplay between interface roughness, orbital confinement, and electron interactions. Here, we report measurements of one- and two-electron valley-orbit state energies as the dot potential is modified by changing gate voltages, and we calculate these same energies using full configuration interaction calculations. The results enable an understanding of the interplay between the physical contributions and enable a new probe of the quantum well interface.
Quantum-confined electronic states such as quantum-well states (QWS) inside thin Pb(111) films and modified image-potential states (IPS) above the Pb(111) films grown on Si(111)7$times$7 substrate were studied by means of low-temperature scanning tunnelling microscopy (STM) and spectroscopy (STS) in the regime of constant current $I$. By plotting the position of the $n-$th emission resonances $U^{,}_n$ versus $n^{2/3}$ and extrapolating the linear fit for the dependence $U^{,}_n(n^{2/3})$ in the high-$n$ limit towards $n=0$, we estimate the local work function for the Pb(111) film: $Wsimeq 3.8pm 0.1,$eV. We experimentally demonstrate that modifications of the shape of the STM tip can change the number of the emission peaks associated with the resonant tunnelling via quantized IPS levels for the same Pb terrace; however it does not affect the estimate of the local work function for the flat Pb terraces. We observe that the maxima in the spectra of the differential tunnelling conductance $dI/dU$ related to both the QWS and the modified IPS resonances are less pronounced if the STM tip becomes more blunt.
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