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Register a new userElectric-field-controlled directional growth of ferroelectric domains in multiferroic BiFeO3 films
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We describe the directional growth of ferroelectric domains in a multiferroic BiFeO3 thin film, which was grown epitaxially on a vicinal (001) SrTiO3 substrate. A detailed structural analysis of the film shows that a strain gradient, which can create a symmetry breaking in a ferroelectric double well potential, causes ferroelectric domains to grow with preferred directionality under the influence of an electric field. Our results suggest the possibility of controlling the direction of domain growth with an electric field by imposing constraints on ferroelectric films, such as a strain gradient.
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The physical properties of epitaxial films can fundamentally differ from those of bulk single crystals even above the critical thickness. By a combination of non-resonant x-ray magnetic scattering, neutron diffraction and vector-mapped x-ray magnetic linear dichroism photoemission electron microscopy, we show that epitaxial (111)-BiFeO3 films support sub-micron antiferromagnetic domains, which are magneto-elastically coupled to a coherent crystallographic monoclinic twin structure. This unique texture, which is absent in bulk single crystals, should enable control of magnetism in BiFeO3 film devices via epitaxial strain.
In recent years, the field of antiferromagnetic spintronics has been substantially advanced. Electric-field control is a promising approach to achieving ultra-low power spintronic devices via suppressing Joule heating. In this article, cutting-edge research, including electric-field modulation of antiferromagnetic spintronic devices using strain, ionic liquids, dielectric materials, and electrochemical ionic migration, are comprehensively reviewed. Various emergent topics such as the Neel spin-orbit torque, chiral spintronics, topological antiferromagnetic spintronics, anisotropic magnetoresistance, memory devices, two-dimensional magnetism, and magneto-ionic modulation with respect to antiferromagnets are examined. In conclusion, we envision the possibility of realizing high-quality room-temperature antiferromagnetic tunnel junctions, antiferromagnetic spin logic devices, and artificial antiferromagnetic neurons. It is expected that this work provides an appropriate and forward-looking perspective that will promote the rapid development of this field.
The electrostatics arising in ferroelectric/dielectric two-dimensional heterostructures and superlatitices is revisited here within a simplest Kittel model, in order to define a clear paradigmatic reference for domain formation. The screening of the depolarizing field in isolated ferroelectric or polar thin films via the formation of 180$^{circ}$ domains is well understood, whereby the width of the domains $w$ grows as the square-root of the film thickness $d$, following Kittels law, for thick enough films ($wll d$). This behavior is qualitatively unaltered when the film is deposited on a dielectric substrate, sandwiched between dielectrics, and even in a superlattice setting, with just a suitable renormalisation of Kittels length. As $d$ decreases, $w(d)$ deviates from Kittels law, reaching a minimum and then diverging onto the mono-domain limit for thin enough films, always assuming a given spontaneous polarization $P$ of the ferrolectric, only modified by linear response to the depolarizing field. In most cases of experimental relevance $P$ would vanish before reaching that thin-film regime. This is not the case for superlattices. Unlike single films, for which the increase of the dielectric constant of the surrounding medium pushes the deviation from the Kittels regime to lower values of $d$, there is a critical value of the relative thickness of ferroelectric/dielectric films in superlattices beyond which that behavior is reversed, and which defines the separation between strong and weak ferroelectric coupling in superlattices.
We propose an electromagnetically tunable thermal diode based on a two phase multiferroics composite. Analytical and full numerical calculations for prototypical heterojunction composed of Iron on Barium titanate in the tetragonal phase demonstrate a strong heat rectification effect that can be controlled externally by a moderate electric field. This finding is of an importance for thermally based information processing and sensing and can also be integrated in (spin)electronic circuits for heat management and recycling.
The control of multiferroic domains through external electric fields has been studied by dielectric measurements and by polarized neutron diffraction on single-crystalline TbMnO$_3$. Full hysteresis cycles were recorded by varying an external field of the order of several kV/mm and by recording the chiral magnetic scattering as well as the charge in a sample capacitor. Both methods yield comparable coercive fields that increase upon cooling.
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