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Register a new userPolarization properties of real aluminum mirrors; I. Influence of the aluminum oxide layer
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In polarimetry it is important to characterize the polarization properties of the instrument itself to disentangle real astrophysical signals from instrumental effects. This article deals with the accurate measurement and modeling of the polarization properties of real aluminum mirrors, as used in astronomical telescopes. Main goals are the characterization of the aluminum oxide layer thickness at different times after evaporation and its influence on the polarization properties of the mirror. The full polarization properties of an aluminum mirror are measured with Mueller matrix ellipsometry at different incidence angles and wavelengths. The best fit of theoretical Mueller matrices to all measurements simultaneously is obtained by taking into account a model of bulk aluminum with a thin aluminum oxide film on top of it. Full Mueller matrix measurements of a mirror are obtained with an absolute accuracy of ~1% after calibration. The determined layer thicknesses indicate logarithmic growth in the first few hours after evaporation, but it remains stable at a value of 4.12+/-0.08 nm on the long term. Although the aluminum oxide layer is established to be thin, it is necessary to consider it to accurately describe the mirrors polarization properties.
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For future space infrared astronomical coronagraphy, we perform experimental studies on the application of aluminum mirrors to a coronagraph. Cooled reflective optics is required for broad-band mid-infrared observations in space, while high-precision optics is required for coronagraphy. For the coronagraph instrument originally proposed for the next-generation infrared astronomical satellite project SPICA (SCI: SPICA Coronagraph Instrument), we fabricated and evaluated the optics consisting of high-precision aluminum off-axis mirrors with diamond-turned surfaces, and conducted a coronagraphic demonstration experiment using the optics with a coronagraph mask. We first measured the wave front errors (WFEs) of the aluminum mirrors with a He-Ne Fizeau interferometer to confirm that the power spectral densities of the WFEs satisfy the SCI requirements. Then we integrated the mirrors into an optical system and evaluated the overall performance of the system. As a result, we estimate the total WFE of the optics to be 33 nm (rms), each mirror contributing 10-20 nm (rms) for the central 14 mm area of the optics, and obtain a contrast of 10^(-5.4) as a coronagraph in the visible light. At a wavelength of 5 um, the coronagraphic system is expected to achieve a contrast of ~10^(-7) based on our model calculation with the measured optical performance. Thus our experiment demonstrates that aluminum mirror optics is applicable to a highly WFE-sensitive instrument such as a coronagraph in space.
We demonstrate a novel type of solar cell, one that uses fixed negative charges, formed at the interface of n-Si with Al2O3, to generate strong inversion at the Si surface by electrostatic repulsion. Built-in voltages of up to 755 mV are found at this interface. To be able to harness this large built-in voltage, we demonstrate a new photovoltaic device concept, where the photocurrent, generated in this inversion layer, is extracted via an inversion layer induced by a high work function PEDOT:PSS top contact, deposited on top of a passivating and dipole-inducing molecular monolayer. Results of the effect of the molecular monolayer on device performance yield open-circuit voltages of up to 550 mV for moderately doped Si, demonstrating the effectiveness of this contact structure in removing the Fermi level pinning that has hindered past efforts in developing this type of solar cell with n-type Si.
Atomic layer deposition (ALD) is an essential tool in semiconductor device fabrication that allows the growth of ultrathin and conformal films to precisely form heterostructures and tune interface properties. The self-limiting nature of the chemical reactions during ALD provides excellent control over the layer thickness. However, in contrast to idealized growth models, it is experimentally challenging to create continuous monolayers by ALD because surface inhomogeneities and precursor steric interactions result in island growth during film nucleation. Thus, the ability to create pin-hole free monolayers by ALD would offer new opportunities for controlling interfacial charge and mass transport in semiconductor devices, as well as for tailoring surface chemistry. Here, we report full encapsulation of c-plane gallium nitride (GaN) with an ultimately thin (~3 {AA}) aluminum oxide (AlOx) monolayer, which is enabled by the partial conversion of the GaN surface oxide into AlOx using a combination of trimethylaluminum deposition and hydrogen plasma exposure. Introduction of monolayer AlOx significantly modifies the physical and chemical properties of the surface, decreasing the work function and introducing new chemical reactivity to the GaN surface. This tunable interfacial chemistry is highlighted by the reactivity of the modified surface with phosphonic acids under standard conditions, which results in self-assembled monolayers with densities approaching the theoretical limit. More broadly, the presented monolayer AlOx deposition scheme can be extended to other dielectrics and III-V-based semiconductors, with significant relevance for applications in optoelectronics, chemical sensing, and (photo)electrocatalysis.
We describe a search for the A-X infrared bands of AlO with a view to better understand the characteristics of this radical. These bands are infrequently encountered in astronomical sources but surprisingly were very prominent in the spectra of two well-known, nova-like variables (V838 Mon and V4332 Sgr) thereby motivating us to explore the physical conditions necessary for their excitation. In this study, we present the detection of A-X bands in the spectra of 13 out of 17 stars, selected on the basis of their J-K colors as potential candidates for detection of these bands. The majority of the AlO detections are in AGB stars viz. 9 OH/IR stars, 2 Mira variables and 2 bright infrared sources. Our study shows that the A-X bands are fairly prevalent in sources with low temperature and O-rich environments. Interesting variation in strength of the AlO bands in one of the sources (IRAS 18530+0817) is reported and the cause for this is examined. Possible applications of the present study are discussed in terms of the role of AlO in alumina dust formation, the scope for estimating the radioactive $^{26}$Al content in AGB stars from the A-X bands, and providing possible targets for further mm/radio studies of AlO which has recently been discovered at millimeter wavelengths.
We are developing lumped-element kinetic inductance detectors (LEKIDs) designed to achieve background-limited sensitivity for far-infrared (FIR) spectroscopy on a stratospheric balloon. The Spectroscopic Terahertz Airborne Receiver for Far-InfraRed Exploration (STARFIRE) will study the evolution of dusty galaxies with observations of the [CII] 158 $mu$m and other atomic fine-structure transitions at $z=0.5-1.5$, both through direct observations of individual luminous infrared galaxies, and in blind surveys using the technique of line intensity mapping. The spectrometer will require large format ($sim$1800 detectors) arrays of dual-polarization sensitive detectors with NEPs of $1 times 10^{-17}$ W Hz$^{-1/2}$. The low-volume LEKIDs are fabricated with a single layer of aluminum (20 nm thick) deposited on a crystalline silicon wafer, with resonance frequencies of $100-250$ MHz. The inductor is a single meander with a linewidth of 0.4 $mu$m, patterned in a grid to absorb optical power in both polarizations. The meander is coupled to a circular waveguide, fed by a conical feedhorn. Initial testing of a small array prototype has demonstrated good yield, and a median NEP of $4 times 10^{-18}$ W Hz$^{-1/2}$.
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