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Register a new userSpace-charge mechanism of aging in ferroelectrics: an exactly solvable two-dimensional model
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Yuri A. Genenko
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A mechanism of point defect migration triggered by local depolarization fields is shown to explain some still inexplicable features of aging in acceptor doped ferroelectrics. A drift-diffusion model of the coupled charged defect transport and electrostatic field relaxation within a two-dimensional domain configuration is treated numerically and analytically. Numerical results are given for the emerging internal bias field of about 1 kV/mm which levels off at dopant concentrations well below 1 mol%; the fact, long ago known experimentally but still not explained. For higher defect concentrations a closed solution of the model equations in the drift approximation as well as an explicit formula for the internal bias field is derived revealing the plausible time, temperature and concentration dependencies of aging. The results are compared to those due to the mechanism of orientational reordering of defect dipoles.
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Hybrid evolution protocols, composed of unitary dynamics and repeated, continuous or projective measurements, give rise to new, intriguing quantum phenomena, including entanglement phase transitions and unconventional conformal invariance. We introduce bosonic Gaussian measurements, which consist of the continuous observation of linear boson operators, and a free Hamiltonian evolution. The Gaussian evolution is then uniquely characterized by the systems covariance matrix, which, despite the stochastic nature of the hybrid protocol, obeys a deterministic, nonlinear evolution equation. The stationary state is exact and unique, and in many cases analytically solvable. Within this framework, we then consider an elementary model for quantum criticality, the free boson conformal field theory, and investigate in which way criticality is modified under a hybrid evolution. Depending on the measurement protocol, we observe scenarios of enriched quantum criticality, characterized by a logarithmic entanglement growth with a floating prefactor, or the loss of criticality, indicated by a volume- or area law entanglement. We provide a classification of each of these scenarios in terms of real-space correlations, the relaxation behavior, and the entanglement structure. For each scenario, we discuss the impact of imperfect measurements, which reduce the purity of the wave function, and we demonstrate that the measurement-induced characteristics are preserved also for mixed states. Finally, we discuss how the correlation functions, or even the complete density operator of the system, can be reconstructed from the continuous measurement records.
In an attempt to regularize a previously known exactly solvable model [Yang and Zhang, Eur. J. Phys. textbf{40}, 035401 (2019)], we find yet another exactly solvable toy model. The interesting point is that while the Hamiltonian of the model is parameterized by a function $f(x)$ defined on $[0, infty )$, its spectrum depends only on the end values of $f$, i.e., $f(0)$ and $f(infty )$. This model can serve as a good exercise in quantum mechanics at the undergraduate level.
We have proposed an exactly solvable quantum spin-3/2 model on a square lattice. Its ground state is a quantum spin liquid with a half integer spin per unit cell. The fermionic excitations are gapless with a linear dispersion, while the topological vison excitations are gapped. Moreover, the massless Dirac fermions are stable. Thus, this model is, to the best of our knowledge, the first exactly solvable model of half-integer spins whose ground state is an algebraic spin liquid.
Within the formalism of matrix product ansatz, we study a two-species asymmetric exclusion process with backward and forward site-ordered sequential update. This model, which was originally introduced with the random sequential update, describes a two-way traffic flow with a dynamic impurity and shows a phase transition between the free flow and traffic jam. We investigate the characteristics of this jamming and examine similarities and differences between our results and those with random sequential update.
The relaxations of conductivity after a temporary change of carrier density n_s during the waiting time t_w have been studied in a strongly disordered two-dimensional electron system in Si. At low enough n_s < n_g (n_g - the glass transition density), the nonexponential relaxations exhibit aging and memory effects at low temperatures T. The aging properties change abruptly at the critical density for the metal-insulator transition n_c < n_g. The observed complex dynamics of the electronic transport is strikingly similar to that of other systems that are far from equilibrium.
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