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Register a new userOrbital-Selective Mott transition out of band degeneracy lifting
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We outline a general mechanism for Orbital-selective Mott transition (OSMT), the coexistence of both itinerant and localized conduction electrons, and show how it can take place in a wide range of realistic situations, even for bands of identical width and correlation, provided a crystal field splits the energy levels in manifolds with different degeneracies and the exchange coupling is large enough to reduce orbital fluctuations. The mechanism relies on the different kinetic energy in manifolds with different degeneracy. This phase has Curie-Weiss susceptibility and non Fermi-liquid behavior, which disappear at a critical doping, all of which is reminiscent of the physics of the pnictides.
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We present an approach to the normal state of cuprate superconductors which is based on a minimal cluster extension of dynamical mean-field theory. Our approach is based on an effective two-impurity model embedded in a self-consistent bath. The two degrees of freedom of this effective model can be associated to the nodal and antinodal regions of momentum space. We find a metal-insulator transition which is selective in momentum space: At low doping quasiparticles are destroyed in the antinodal region, while they remain protected in the nodal region, leading to the formation of apparent Fermi arcs. We compare our results to tunneling and angular-resolved photoemission experiments on cuprates. At very low energy, a simple description of this transition can be given using rotationally invariant slave bosons.
The electronic states near the Fermi level of recently discovered superconductor Ba$_2$CuO$_{4-delta}$ consist primarily of the Cu $d_{x^2-y^2}$ and $d_{3z^2-r^2}$ orbitals. We investigate the electronic correlation effect and the orbital polarization of an effective two-orbital Hubbard model mimicking the low-energy physics of Ba$_2$CuO$_{4-delta}$ in the hole-rich regime by utilizing the dynamical mean-field theory with the Lanczos method as the impurity solver. We find that the hole-overdoped Ba$_2$CuO$_{4-delta}$ with $3d^8$ (Cu$^{3+}$) is in the orbital-selective Mott phase (OSMP) at half-filling, and the typical two-orbital feature remains in Ba$_2$CuO$_{4-delta}$ when the electron filling approaches $n_esim 2.5$, which closely approximates to the experimental hole doping for the emergence of the high-$T_c$ superconductivity. We also obtain that the orbital polarization is very stable in the OSMP, and the multiorbital correlation can drive orbital polarization transitions. These results indicate that in hole-overdoped Ba$_2$CuO$_{4-delta}$ the OSMP physics and orbital polarization, local magnetic moment, and spin or orbital fluctuations still exist. We propose that our present results are also applicable to Sr$_2$CuO$_{4-delta}$ and other two-orbital cuprates, demanding an unconventional multiorbital superconducting scenario in hole-overdoped high-$T_c$ cuprates.
We report a quantum phase transition between orbital-selective Mott states, with different localized orbitals, in a Hunds metals model. Using the density matrix renormalization group, the phase diagram is constructed varying the electronic density and Hubbard $U$, at robust Hunds coupling. We demonstrate that this transition is preempted by charge fluctuations and the emergence of free spinless fermions, as opposed to the magnetically-driven Mott transition. The Luttinger correlation exponent is shown to have a universal value in the strong-coupling phase, whereas it is interaction dependent at intermediate couplings. At weak coupling we find a second transition from a normal metal to the intermediate-coupling phase.
We study the Mott metal-insulator transition in the two-band Hubbard model with different hopping amplitudes $t_1$ and $t_2$ for the two orbitals on the two-dimensional square lattice by using {it non-magnetic} variational wave functions, similarly to what has been considered in the limit of infinite dimensions by dynamical mean-field theory. We work out the phase diagram at half filling (i.e., two electrons per site) as a function of $R=t_2/t_1$ and the on-site Coulomb repulsion $U$, for two values of the Hunds coupling $J=0$ and $J/U=0.1$. Our results are in good agreement with previous dynamical mean-field theory calculations, demonstrating that the non-magnetic phase diagram is only slightly modified from infinite to two spatial dimensions. Three phases are present: a metallic one, for small values of $U$, where both orbitals are itinerant; a Mott insulator, for large values of $U$, where both orbitals are localized because of the Coulomb repulsion; and the so-called orbital-selective Mott insulator (OSMI), for small values of $R$ and intermediate $U$s, where one orbital is localized while the other one is still itinerant. The effect of the Hunds coupling is two-fold: on one side, it favors the full Mott phase over the OSMI; on the other side, it stabilizes the OSMI at larger values of $R$.
We present evidence of strain-induced modulation of electron correlation effects and increased orbital anisotropy in the rutile phase of epitaxial VO$_2$/TiO$_2$ films from hard x-ray photoelectron spectroscopy and soft V L-edge x-ray absorption spectroscopy, respectively. By using the U(1) slave spin formalism, we further argue that the observed anisotropic correlation effects can be understood by a model of orbital selective Mott transition at a filling that is non-integer, but close to the half-filling. Because the overlaps of wave functions between $d$ orbitals are modified by the strain, orbitally-dependent renormalizations of the bandwidths and the crystal fields occur with the application of strain. These renormalizations generally result in different occupation numbers in different orbitals. We find that if the system has a non-integer filling number near the half-filling such as for VO$_2$, certain orbitals could reach an occupation number closer to half-filling under the strain, resulting in a strong reduction in the quasiparticle weight $Z_{alpha}$ of that orbital. Moreover, an orbital selective Mott transition, defined as the case with $Z_{alpha} = 0$ in some, but not all orbitals, could be accessed by epitaxial strain-engineering of correlated electron systems.
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