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Register a new userStructure and Magnetic Order in the NdFeAs(O,F) Superconductor System
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The transition temperature Tc~26 K of the recently discovered superconductor LaFeAs(O,F) has been demonstrated to be extremely sensitive to the lanthanide ion, reaching 55 K for the Sm containing oxypnictides. Therefore, it is important to determine how the moment on the lanthanide affects the overall magnetism in these systems. Here we report a neutron diffraction study of the Nd oxypnictides. Long ranged antiferromagnetic order is apparent in NdFeAsO below 1.96 K. Rietveld refinement shows that both Fe and Nd magnetic ordering are required to describe the observed data with the staggered moment 1.55(4) Bohr magneton per Nd and 0.9(1) Bohr magneton per Fe at 0.3 K. The other structural properties such as the tetragonal-orthorhombic distortion are found to be very similar to those in LaFeAsO. Neither the magnetic ordering nor the structural distortion occur in the superconducting sample NdFeAsO0.80F0.20 at any temperatures down to 1.5 K.
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The Fe-based superconductors (FBS) present a large variety of compounds whose properties are affected to different extents by their crystal structures. Amongst them, the $it{RE}$FeAs(O,F) ($it{RE}$1111, where $it{RE}$ is a rare earth element) is the family with the highest critical temperature $T_c$ but also with a large anisotropy and Josephson vortices as demonstrated in the flux-flow regime in Sm1111 ($T_c$ $sim$ 55 K). Here we focus our attention on the pinning properties of the lower-$T_c$ Nd1111 in the flux-creep regime. We demonstrate that for H//c critical current density $J_c$ at high temperatures is dominated by point-defect pinning centres, whereas at low temperatures surface pinning by planar defects parallel to the $it{c}$-axis and vortex shearing prevail. When the field approaches the $it{ab}$-planes, two different regimes are observed at low temperatures as a consequence of the transition between 3D-Abrikosov and 2D-Josephson vortices: one is determined by the formation of a vortex staircase structure and one by lock-in of the vortices parallel to the layers. This is the first study on FBS showing this behaviour in a full temperature, field, and angular range and it demonstrates that, despite the lower $T_c$ and anisotropy of Nd1111 with respect to Sm1111, this compound is substantially affected by intrinsic pinning generating a strong $it{ab}$-peak in $J_c$.
The effect of $alpha$-particle irradiation on a NdFeAs(O,F) thin film has been investigated to determine how the introduction of defects affects basic superconducting properties, including the critical temperature $T_c$ and the upper critical field $H_{c2}$, and properties more of interest for applications, like the critical current density $J_c$ and the related pinning landscape. The irradiation-induced suppression of the film $T_c$ is significantly smaller than on a similarly damaged single crystal. Moreover $H_{c2}$ behaves differently, depending on the field orientation: for H//c the $H_{c2}$ slope monotonically increases with increasing disorder, whereas for H//ab it remains constant at low dose and it increases only when the sample is highly disordered. This suggests that a much higher damage level is necessary to drive the NdFeAs(O,F) thin film into the dirty limit. Despite the increase in the low temperature $H_{c2}$, the effects on the $J_c$(H//c) performances are moderate in the measured temperature and field ranges, with a shifting of the pinning force maximum from 4.5 T to 6 T after an irradiation of $2times10^{15} cm^{-2}$. On the contrary, $J_c$(H//ab) is always suppressed. The analysis demonstrates that irradiation does introduce point defects acting as pinning centres proportionally to the irradiation fluence but also suppresses the effectiveness of c-axis correlated pinning present in the pristine sample. We estimate that significant performance improvements may be possible at high field or at temperatures below 10 K. The suppression of the $J_c$(H//ab) performance is not related to a decrease of the $J_c$ anisotropy as found in other superconductors. Instead it is due to the presence of point defects that decrease the efficiency of the ab-plane intrinsic pinning typical of materials with a layered structure.
The recently discovered high temperature superconductor F-doped LaFeAsO and related compounds represent a new class of superconductors with the highest transition temperature (Tc) apart from the cuprates. The studies ongoing worldwide are revealing that these Fe-based superconductors are forming a unique class of materials that are interesting from the viewpoint of applications. To exploit the high potential of the Fe-based superconductors for device applications, it is indispensable to establish a process that enables the growth of high quality thin films. Efforts of thin film preparation started soon after the discovery of Fe-based superconductors, but none of the earlier attempts had succeeded in an in-situ growth of a superconducting film of LnFeAs(O,F) (Ln=lanthanide), which exhibits the highest Tc to date among the Fe-based superconductors. Here, we report on the successful growth of NdFeAs(O,F) thin films on GaAs substrates, which showed well-defined superconducting transitions up to 48 K without the need of an ex-situ heat treatment.
Systematic studies of the NdFeAsOF superconducting energy gap via the point-contact Andreev-reflection (PCAR) spectroscopy are presented. The PCAR conductance spectra show at low temperatures a pair of gap-like peaks at about 4 - 7 mV indicating the superconducting energy gap and in most cases also a pair of humps at around 10 mV. Fits to the s-wave two-gap model of the PCAR conductance allowed to determine two superconducting energy gaps in the system. The energy-gap features however disappear already at T* = 15 to 20 K, much below the particular Tc of the junction under study. At T* a zero-bias conductance (ZBC) peak emerges, which at higher temperatures usually overwhelms the spectrum with intensity significantly higher than the conductance signal at lower temperatures. Possible causes of this unexpected temperature effect are discussed. In some cases the conductance spectra show just a reduced conductance around the zero-bias voltage, the effect persisting well above the bulk transition temperature. This indicates a presence of the pseudogap in the system.
NdFeAs(O,F) thin films having different fluorine contents were grown on 5 deg. or 10 deg. vicinal cut MgO and CaF2 single crystalline substrates by molecular beam epitaxy. Structural characterisations by reflection high-energy electron diffraction and x-ray diffraction confirmed the epitaxial growth of NdFeAs(O,F). The resistivities of the ab-plane and along the c-axis were derived from the resistivity measurements in the longitudinal and transversal directions. The c-axis resistivity was always higher than the ab-plane resistivity, resulting from the anisotropic electronic structure. The resistivity anisotropy at 300 K was almost constant in the range of 50-90 irrespective of the F content. On the other hand, the resistivity anisotropy at 56 K showed a strong fluorine dependence: the resistivity anisotropy was over 200 for the films with optimum F contents (superconducting transition temperature Tc around 50 K), whereas the resistivity anisotropy was around 70 for the films in the under-doped regime (Tc between 35 and 45 K). The mass anisotropy are the effective masses along the c-axis and on the ab-plane) close to Tc derived from the anisotropic Ginzburg-Landau approach using the angular-dependency of the ab-plane resistivity was in the range from 2 to 5. On the assumption that the square of the mass anisotropy is equal to the resistivity anisotropy, those values are small compared to the normal state anisotropy.
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