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Register a new userSelf-organized plane arrays of metallic magnetic elements
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We studied the dynamic magnetic properties of plane periodical arrays of circular permalloy nano-dots fabricated using a self-organized mask formed by polysterene nanospheres on the surface of a Permalloy film. Conventional (microwave cavity) and broadband coplanar-line ferromagnetic resonance setups were used for the measurements. We found several well resolved resonance peaks. This result shows that the self-organized mask fabrication technique is able to produce high-quality samples with small dispersion of geometrical and magnetic parameters.
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Ordered arrays of magnetic nanowires are commonly synthesized by electrodeposition in nanoporous alumina templates. Due to their dense packing, strong magnetostatic interactions prevent the manipulation of wires individually. Using atomic layer deposition we reduce the diameter of the pores prior to electrodeposition. This reduces magnetostatic interactions, yielding fully remanent hysteresis loops. This is a first step towards the use of such arrays for magnetic racetrack memories.
While achieving high Curie temperatures (above room temperature) in diluted magnetic semiconductors remains a challenge in the case of well controlled homogeneous alloys, several systems characterized by a strongly inhomogeneous incorporation of the magnetic component appear as promising. Incorporation of manganese into germanium drastically alters the growth conditions, and in certain conditions of low temperature Molecular Beam Epitaxy it leads to the formation of well organized nanocolumns of a Mn-rich material, with a crystalline structure in epitaxial relationship with the Mn-poor germanium matrix. A strong interaction between the Mn atoms in these nanocolums is demonstrated by x-ray absorption spectroscopy, giving rise to a ferromagnetic character as observed through magnetometry and x-ray magnetic circular dichroism. Most interesting, intense magneto-transport features are observed on the whole structure, which strongly depend on the magnetic configuration of the nanocolumns.
We have fabricated 5nm-high Fe(110) stripes by self-organized (SO) growth on a slightly vicinal R(110)/Al2O3(11-20) surface, with R=Mo, W. Remanence, coercivity and domain patterns were observed at room temperature (RT). This contrasts with conventional SO epitaxial systems, that are superparamagnetic or even non-magnetic at RT due to their flatness. Our process should help to overcome superparamagnetism without compromise on the lateral size if SO systems are ever to be used in applications.
Two-photon polymerization has been demonstrated as an effective technique to define embedded defects in three-dimensional photonic crystals. In this work we demonstrate the ability to precisely position embedded defects with respect to the lattice of three-dimensional photonic crystals by imaging the structure concurrently with two-photon writing. Defects are written with near-perfect lattice registration and at specifically defined depths within the crystal. The importance of precise defect position is demonstrated by investigating the optical properties of embedded planar cavities written in a photonic crystal. The experimental data is compared to spectra calculated using the Scalar Wave Approximation (SWA) which further demonstrates the importance of defect placement.
From first-principles calculations, we predict that transition metal (TM) atom doped silicon nanowires have a half-metallic ground state. They are insulators for one spin-direction, but show metallic properties for the opposite spin direction. At high coverage of TM atoms, ferromagnetic silicon nanowires become metallic for both spin-directions with high magnetic moment and may have also significant spin-polarization at the Fermi level. The spin-dependent electronic properties can be engineered by changing the type of dopant TM atoms, as well as the diameter of the nanowire. Present results are not only of scientific interest, but can also initiate new research on spintronic applications of silicon nanowires.
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