Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userRadiation Tolerance of Fully-Depleted P-Channel CCDs Designed for the SNAP Satellite
454
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
Thick, fully depleted p-channel charge-coupled devices (CCDs) have been developed at the Lawrence Berkeley National Laboratory (LBNL). These CCDs have several advantages over conventional thin, n-channel CCDs, including enhanced quantum efficiency and reduced fringing at near-infrared wavelengths and improved radiation tolerance. Here we report results from the irradiation of CCDs with 12.5 and 55 MeV protons at the LBNL 88-Inch Cyclotron and with 0.1-1 MeV electrons at the LBNL Co60 source. These studies indicate that the LBNL CCDs perform well after irradiation, even in the parameters in which significant degradation is observed in other CCDs: charge transfer efficiency, dark current, and isolated hot pixels. Modeling the radiation exposure over a six-year mission lifetime with no annealing, we expect an increase in dark current of 20 e/pixel/hr, and a degradation of charge transfer efficiency in the parallel direction of 3e-6 and 1e-6 in the serial direction. The dark current is observed to improve with an annealing cycle, while the parallel CTE is relatively unaffected and the serial CTE is somewhat degraded. As expected, the radiation tolerance of the p-channel LBNL CCDs is significantly improved over the conventional n-channel CCDs that are currently employed in space-based telescopes such as the Hubble Space Telescope.
rate research
Read More
Thick fully depleted CCDs, while enabling wide spectral response, also present challenges in understanding the systematic errors due to 3D charge transport. This 2014 Workshop on Precision Astronomy with Fully Depleted CCDs covered progress that has been made in the testing and modeling of these devices made since a workshop by the same name in 2013. Presentations covered the science drivers, CCD characterization, laboratory measurements of systematics, calibration, and different approaches to modeling the response and charge transport. The key issue is the impact of these CCD sensor features on dark energy science, including astrometry and photometry. Successful modeling of the spatial systematics can enable first order correction in the data processing pipeline.
In this work, we will present a physical model and measurements of the transport of small charge packets in the bulk of thick high resistivity CCD before being collected by the pixel potential wells. A new technique to measure the lateral spread of the charge as a function of the ionization depth in the bulk is presented. Results from measurements on CCD currently in use for several scientific instruments are shown and validated with a new mathematical algorithm to extend the current modeling based only on the diffusion of the charge in silicon.
The Gaia satellite is a high-precision astrometry, photometry and spectroscopic ESA cornerstone mission, currently scheduled for launch in late 2011. Its primary science drivers are the composition, formation and evolution of the Galaxy. Gaia will achieve its scientific requirements with detailed calibration and correction for radiation damage. Microscopic models of Gaias CCDs are being developed to simulate the charge trapping effect of radiation damage, which causes charge transfer inefficiency. The key to calculating the probability of a photoelectron being captured by a trap is the 3D electron density within each CCD pixel. However, this has not been physically modelled for Gaia CCD pixels. In this paper, the first of a series, we motivate the need for such specialised 3D device modelling and outline how its future results will fit into Gaias overall radiation calibration strategy.
X-ray radiation hardness of FD-SOI n- and p-MOSFET has been investigated. After 1.4 kGy(Si) irradiation, 15% drain current increase for n-MOSFET and 20% drain current decrease for p-MOSFET are observed. From analysis of gmmax-Vsub, the major cause of n-MOSFET drain current change is the generated positive charge in BOX. On the other hand, the major cause of p-MOSFET drain current change is the radiation induced gate channel modulation by the generated positive charge in sidewall spacer. It is confirmed that the p-MOSFET drain current change is improved by higher PLDD dose. Thinner BOX is also proposed for further radiation hardness improvement.
We report the radiation hardness of a p-channel CCD developed for the X-ray CCD camera onboard the XRISM satellite. This CCD has basically the same characteristics as the one used in the previous Hitomi satellite, but newly employs a notch structure of potential for signal charges by increasing the implant concentration in the channel. The new device was exposed up to approximately $7.9 times 10^{10} mathrm{~protons~cm^{-2}}$ at 100 MeV. The charge transfer inefficiency was estimated as a function of proton fluence with an ${}^{55} mathrm{Fe}$ source. A device without the notch structure was also examined for comparison. The result shows that the notch device has a significantly higher radiation hardness than those without the notch structure including the device adopted for Hitomi. This proves that the new CCD is radiation tolerant for space applications with a sufficient margin.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
