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Register a new userAnomalous Hall effect in (In,Mn)Sb dilute magnetic semiconductor
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High magnetic field study of Hall resistivity in the ferromagnetic phase of (In,Mn)Sb allows one to separate its normal and anomalous components. We show that the anomalous Hall term is not proportional to the magnetization, and that it even changes sign as a function of magnetic field. We also show that the application of pressure modifies the scattering process, but does not influence the Hall effect. These observations suggest that the anomalous Hall effect in (In,Mn)Sb is an intrinsic property and support the application of the Berry phase theory for (III,Mn)V semiconductors. We propose a phenomenological description of the anomalous Hall conductivity, based on a field-dependent relative shift of the heavy- and light-hole valence bands and the split-off band.
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Results of point contact Andreev reflection (PCAR) experiments on (In,Mn)Sb are presented and analyzed in terms of current models of charge conversion at a superconductor-ferromagnet interface. We investigate the influence of surface transparency, and study the crossover from ballistic to diffusive transport regime as contact size is varied. Application of a Nb tip to a (In,Mn)Sb sample with Curie temperature Tc of 5.4 K allowed the determination of spin-polarization when the ferromagnetic phase transition temperature is crossed. We find a striking difference between the temperature dependence of the local spin polarization and of the macroscopic magnetization, and demonstrate that nanoscale clusters with magnetization close to the saturated value are present even well above the magnetic phase transition temperature.
Narrow-gap higher mobility semiconducting alloys In_{1-x}Mn_{x}Sb were synthesized in polycrystalline form and their magnetic and transport properties have been investigated. Ferromagnetic response in In_{0.98}Mn_{0.02}Sb was detected by the observation of clear hysteresis loops up to room temperature in direct magnetization measurements. An unconventional (reentrant) magnetization versus temperature behavior has been found. We explained the observed peculiarities within the frameworks of recent models which suggest that a strong temperature dependence of the carrier density is a crucial parameter determining carrier-mediated ferromagnetism of (III,Mn)V semiconductors. The correlation between magnetic states and transport properties of the sample has been discussed. The contact spectroscopy method is used to investigate a band structure of (InMn)Sb near the Fermi level. Measurements of the degree of charge current spin polarization have been carried out using the point contact Andreev reflection (AR) spectroscopy. The AR data are analyzed by introducing a quasiparticle spectrum broadening, which is likely to be related to magnetic scattering in the contact. The AR spectroscopy data argued that at low temperature the sample is decomposed on metallic ferromagnetic clusters with relatively high spin polarization of charge carriers (up to 65% at 4.2K) within a cluster.
The Point Contact Andreev Reflection (PCAR) technique has already been used to measure the spin polarization of some of the dilute magnetic semiconductors, such as narrow-band (In,Mn)Sb, as well as wider gap (Ga,Mn)As. While in (In,Mn)Sb conventional Andreev reflection has been demonstrated, in (Ga,Mn)As quasiparticle density of states (DOS) broadening has been observed, possibly due to inelastic scattering effects. Here, we investigate the spin polarization, magnetic, and transport properties of epitaxially grown (Ga,Mn)Sb films with the Curie temperature of ~ 10K. The spin polarization of 57+/-5% was measured. Spectrum broadening in (Ga,Mn)Sb has also been observed.
In this paper we report successful synthesis and magnetic properties of (Ca,Na)(Zn,Mn)2Sb2 as a new ferromagnetic dilute magnetic semiconductor (DMS). In this DMS material the concentration of magnetic moments can be controlled independently from the concentration of electric charge carriers that are required for mediating magnetic interactions between these moments. This feature allows us to separately investigate the effect of carriers and of spins on the ferromagnetic properties of this new DMS alloy, and particularly of the critical ferromagnetic behavior. We use modified Arrott plot technique to establish critical exponents b, g, and d of this alloy. We find that at low Mn concentrations (< 10 at.%), it is governed by short-range 3D-Ising behavior, with experimental values of b, g, and d very close to theoretical 3D-Ising values of 0.325, 1.24, and 4.815. However, as the Mn concentration increases, this DMS material exhibits a mixed-phase behavior, with g retaining its 3D-Ising characteristics, but b crossing over to longer-range mean-field behavior.
Magnetic semiconductors are attracting high interest because of their potential use for spintronics, a new technology which merges electronics and manipulation of conduction electron spins. (GaMn)As and (GaMn)N have recently emerged as the most popular materials for this new technology. While Curie temperatures are rising towards room temperature, these materials can only be fabricated in thin film form, are heavily defective, and are not obviously compatible with Si. We show here that it is productive to consider transition metal monosilicides as potential alternatives. In particular, we report the discovery that the bulk metallic magnets derived from doping the narrow gap insulator FeSi with Co share the very high anomalous Hall conductance of (GaMn)As, while displaying Curie temperatures as high as 53 K. Our work opens up a new arena for spintronics, involving a bulk material based only on transition metals and Si, and which we have proven to display a variety of large magnetic field effects on easily measured electrical properties.
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