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Register a new userBroadening processes in GaAs delta-doped quantum wire superlattices
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We use both Quantum Hall and Shubnikov de Haas experiments at high magnetic field and low temperature to analyse broadening processes of Landau levels in a delta-doped 2D quantum well superlattice and a 1D quantum wire superlattice generated from the first one by controlled dislocation slips. We deduce first the origin of the broadening from the damping factor in the Shubnikov de Haas curves in various configurations of the magnetic field and the measured current for both kinds of superlattice. Then, we write a general formula for the resistivity in the Quantum Hall effect introducing a dephasing factor we link to the process of localization.
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Quantum wire superlattices (1D) realized by controlled dislocation slipping in quantum well superlattices (2D) (atomic saw method) have already shown magnetophonon oscillations. This effect has been used to investigate the electronic properties of such systems and prove the quantum character of the physical properties of the wires. By cooling the temperature and using pulsed magnetic field up to 35 T, we have observed both quantum Hall effect (QHE) and Shubnikov de Haas (SdH) oscillations for various configurations of the magnetic field. The effective masses deduced from the values of the fundamental fields are coherent with those obtained with magnetophonon effect. The field rotation induces a change in the resonance frequencies due to the modification of the mass tensor as in a (3D) electron gas. In view the QHE, the plateaus observed in rho_yz are dephased relatively to rho_zz minima which seems to be linked to the dephasing of the minima of the density of states of the broadened Landau levels.
We present the characterization of the band structure of GaAs/AlAs quantum-wire 1D superlattices performed by magnetophonon resonance with pulsed magnetic fields up to 35 T. The samples, generated by the atomic saw method from original quantum-well 2D superlattices, underwent substantial modifications of their energy bands built up on the X-states of the bulk. We have calculated the band structure by a finite element method and we have studied the various miniband structures built up of the masses m_t and m_l of GaAs and AlAs at the point X. From an experimental point of view, the main result is that in the 2D case we observe only resonances when the magnetic field B is applied along the growth axis whereas in the 1D case we obtain resonances in all magnetic field configurations. The analysis of the maxima (or minima for B // E) in the resistivity rho_xy as a function of B allows us to account, qualitatively and semi-quantitatively, for the band structure theoretically expected.
We study charge transport in one-dimensional graphene superlattices created by applying layered periodic and disordered potentials. It is shown that the transport and spectral properties of such structures are strongly anisotropic. In the direction perpendicular to the layers, the eigenstates in a disordered sample are delocalized for all energies and provide a minimal non-zero conductivity, which cannot be destroyed by disorder, no matter how strong this is. However, along with extended states, there exist discrete sets of angles and energies with exponentially localized eigenfunctions (disorder-induced resonances). It is shown that, depending on the type of the unperturbed system, the disorder could either suppress or enhance the transmission. Most remarkable properties of the transmission have been found in graphene systems built of alternating p-n and n-p junctions. This transmission has anomalously narrow angular spectrum and, surprisingly, in some range of directions it is practically independent of the amplitude of fluctuations of the potential. Owing to these features, such samples could be used as building blocks in tunable electronic circuits. To better understand the physical implications of the results presented here, most of our results have been contrasted with those for analogous wave systems. Along with similarities, a number of quite surprising differences have been found.
We study the electronic properties of GaAs-AlGaAs superlattices with intentional correlated disorder by means of photoluminescence and vertical dc resistance. The results are compared to those obtained in ordered and uncorrelated disordered superlattices. We report the first experimental evidence that spatial correlations inhibit localization of states in disordered low-dimensional systems, as our previous theoretical calculations suggested, in contrast to the earlier belief that all eigenstates are localized.
The influence of contacts on linear transport through a molecular wire attached to mesoscopic tubule leads is studied. It is shown that low dimensional leads, such as carbon nanotubes, in contrast to bulky electrodes, strongly affect transport properties. By focusing on the specificity of the lead-wire contact, we show, in a fully analytical treatment, that the geometry of this hybrid system supports a mechanism of channel selection and a sum rule, which is a distinctive hallmark of the mesoscopic nature of the electrodes.
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