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Register a new userStrong terahertz emission from superlattices via Zener tunneling
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We develop a comprehensive, elegant theory to explain terahertz (THz) emission from a superlattice over a wide range of applied electric field,which shows excellent agreement between theory andexperiment for a GaAs/Al{0.3}Ga{0.7As superlattice. Specifically we show that increasing electric field increases THz emission for low fields, then reduces emission for medium fields due to field-induced wave function localization, and then increases emission in the high field due to delocalization and Zener tunneling between minibands. Our theory shows that Zener tunneling resonances yield high THz emission intensities and points to superlattice design improvements.
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We study theoretically the impact of Zener tunneling on the charge-transport properties of quasi-metallic (Qm) carbon nanotubes (characterized by forbidden band gaps of few tens of meV). We also analyze the interplay between Zener tunneling and elastic scattering on defects. To this purpose we use a model based on the master equation for the density matrix, that takes into account the inter-band Zener transitions induced by the electric field (a quantum mechanical effect), the electron-defect scattering and the electron-phonon scattering. In presence of Zener tunnelling the Qm tubes support an electrical current even when the Fermi energy lies in the forbidden band gap. In absence of elastic scattering (in high quality samples), the small size of the band gap of Qm tubes enables Zener tunnelling for realistic values of the the electric field (above $sim$ 1 V/mu m). The presence of a strong elastic scattering (in low quality samples) further decreases the values of the field required to observe Zener tunnelling. Indeed, for elastic-scattering lengths of the order of 50 nm, Zener tunnelling affects the current/voltage characteristic already in the linear regime. In other words, in quasi-metallic tubes, Zener tunneling is made more visible by defects.
We report strong light emission from a room-temperature n-type unipolar-doped In0.53Ga0.47As/AlAs double-barrier resonant-tunneling diode (DBRTD) precisely at the In0.53Ga0.47As band-edge near 1650 nm. The emission characteristics are very similar to what was observed recently in GaN/AlN DBRTDs, both of which suggest that the mechanism for emission is cross-gap electron-hole recombination via resonant- and Zener co-tunneling of electrons, the latter mechanism generating the required holes. Analysis shows that because of the relatively small bandgap, the Zener tunneling probability can be large in this In0.53Ga0.47As/AlAs DBRTD, and is a mechanism that may have been overlooked in the longstanding literature. The universal nature of the co-tunneling is best supported by the factor (EG)2/F in the Kane tunneling probability, which is nearly the same at the peak voltage of the In0.53Ga0.47As and GaN DBRTDs.
A simple mechanical analog describing Landau-Zener tunneling effect is proposed using two weakly coupled chains of nonlinear oscillators with gradually decreasing (first chain) and increasing (second chain) masses. The model allows to investigate nonlinear generalization of Landau-Zener tunneling effect considering soliton propagation and tunneling between the chains. It is shown that soliton tunneling characteristics become drastically dependent on its amplitude in nonlinear regime. The validity of the developed tunneling theory is justified via comparison with direct numerical simulations on oscillator ladder system.
The terahertz spectral regime, ranging from about 0.1 to 15 THz, is one of the least explored yet most technologically transformative spectral regions. One current challenge is to develop efficient and compact terahertz emitters/detectors with a broadband and gapless spectrum that can be tailored for various pump photon energies. Here we demonstrate efficient single-cycle broadband THz generation, ranging from about 0.1 to 4 THz, from a thin layer of split-ring resonators with few tens of nanometers thickness by pumping at the telecommunications wavelength of 1.5 micrometer (200 THz). The terahertz emission arises from exciting the magnetic-dipole resonance of the split-ring resonators and quickly decreases under off-resonance pumping. This, together with pump polarization dependence and power scaling of the terahertz emission, identifies the role of optically induced nonlinear currents in split-ring resonators. We also reveal a giant sheet nonlinear susceptibility $sim$10$^{-16}$ m$^2$V$^{-1}$ that far exceeds thin films and bulk non-centrosymmetric materials.
Topological insulators (TIs) represent a novel quantum state of matter, characterized by edge or surface-states, showing up on the topological character of the bulk wave functions. Allowing electrons to move along their surface, but not through their inside, they emerged as an intriguing material platform for the exploration of exotic physical phenomena, somehow resembling the graphene Dirac-cone physics, as well as for exciting applications in optoelectronics, spintronics, nanoscience, low-power electronics, and quantum computing. Investigation of topological surface states (TSS) is conventionally hindered by the fact that in most of experimental conditions the TSS properties are mixed up with those of bulk-states. Here, we devise a novel tool to unveil TSS and to probe related plasmonic effects. By engineering Bi2Te(3-x)Sex stoichiometry, and by gating the surface of nanoscale field-effect-transistors, exploiting thin flakes of Bi2Te2.2Se0.8 or Bi2Se3, we provide the first demonstration of room-temperature Terahertz (THz) detection mediated by over-damped plasma-wave oscillations on the activated TSS of a Bi2Te2.2Se0.8 flake. The reported detection performances allow a realistic exploitation of TSS for large-area, fast imaging, promising superb impacts on THz photonics.
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