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Register a new userProbing topological insulators surface states via plasma-wave Terahertz detection
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Miriam Serena Vitiello Prof
Publication date
2018
fields
Physics
and research's language is
English
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Topological insulators (TIs) represent a novel quantum state of matter, characterized by edge or surface-states, showing up on the topological character of the bulk wave functions. Allowing electrons to move along their surface, but not through their inside, they emerged as an intriguing material platform for the exploration of exotic physical phenomena, somehow resembling the graphene Dirac-cone physics, as well as for exciting applications in optoelectronics, spintronics, nanoscience, low-power electronics, and quantum computing. Investigation of topological surface states (TSS) is conventionally hindered by the fact that in most of experimental conditions the TSS properties are mixed up with those of bulk-states. Here, we devise a novel tool to unveil TSS and to probe related plasmonic effects. By engineering Bi2Te(3-x)Sex stoichiometry, and by gating the surface of nanoscale field-effect-transistors, exploiting thin flakes of Bi2Te2.2Se0.8 or Bi2Se3, we provide the first demonstration of room-temperature Terahertz (THz) detection mediated by over-damped plasma-wave oscillations on the activated TSS of a Bi2Te2.2Se0.8 flake. The reported detection performances allow a realistic exploitation of TSS for large-area, fast imaging, promising superb impacts on THz photonics.
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Weak antilocalization measurements has become a standard tool for studying quantum coherent transport in topological materials. It is often used to extract information about number of conducting channels and dephasing length of topological surface states. We study thin films of prototypical topological crystalline insulator SnTe. To access microscopic characteristic of these states we employ a model developed by Tkachov and Hankiewicz, [Physical Review B 84, 035444]. Using this model the spatial decay of the topological states is obtained from measurements of quantum corrections to the conductivity in perpendicular and parallel configurations of the magnetic field. Within this model we find interaction between two topological boundaries which results in scaling of the spatial decay with the film thickness. We attribute this behavior to bulk reservoir which mediates interactions by scattering events without phase breaking of topological carriers.
The surface states of 3D topological insulators can exhibit Fermi surfaces of arbitrary area when the chemical potential is tuned away from the Dirac points. We focus on topological Kondo insulators and show that the surface states can acquire a finite Fermi surface even when the chemical potential is pinned to the Dirac point energy. We illustrate how this can occur when the crystal symmetry is lowered from cubic to tetragonal in a minimal two-orbital model. We label such surface modes as `shadow surface states. We also show that for certain bulk hybridization the Fermi surface of the shadow states can become comparable to the extremal area of the unhybridized bulk bands. The `large Fermi surface of the shadow states is expected to lead to large-frequency quantum oscillations in the presence of an applied magnetic field. Consequently, shadow surface states provide an alternative to mechanisms involving bulk Landau-quantized levels or surface Kondo breakdown for anomalous magnetic quantum oscillations in topological Kondo insulators with tetragonal crystal symmetry.
One of the hallmarks of topological insulators is the correspondence between the value of its bulk topological invariant and the number of topologically protected edge modes observed in a finite-sized sample. This bulk-boundary correspondence has been well-tested for strong topological invariants, and forms the basis for all proposed technological applications of topology. Here, we report that a group of weak topological invariants, which depend only on the symmetries of the atomic lattice, also induces a particular type of bulk-boundary correspondence. It predicts the presence or absence of states localised at the interface between two inversion-symmetric band insulators with trivial values for their strong invariants, based on the space group representation of the bands on either side of the junction. We show that this corresponds with symmetry-based classifications of topological materials. The interface modes are protected by the combination of band topology and symmetry of the interface, and may be used for topological transport and signal manipulation in heterojunction-based devices.
A prominent feature of topological insulators (TIs) is the surface states comprising of spin-nondegenerate massless Dirac fermions. Recent technical advances have made it possible to address the surface transport properties of TI thin films while tuning the Fermi levels of both top and bottom surfaces across the Dirac point by electrostatic gating. This opened the window for studying the spin-nondegenerate Dirac physics peculiar to TIs. Here we report our discovery of a novel planar Hall effect (PHE) from the TI surface, which results from a hitherto-unknown resistivity anisotropy induced by an in-plane magnetic field. This effect is observed in dual-gated devices of bulk-insulating Bi$_{2-x}$Sb$_{x}$Te$_{3}$ thin films, in which both top and bottom surfaces are gated. The origin of PHE is the peculiar time-reversal-breaking effect of an in-plane magnetic field, which anisotropically lifts the protection of surface Dirac fermions from back-scattering. The key signature of the field-induced anisotropy is a strong dependence on the gate voltage with a characteristic two-peak structure near the Dirac point which is explained theoretically using a self-consistent T-matrix approximation. The observed PHE provides a new tool to analyze and manipulate the topological protection of the TI surface in future experiments.
This study shows that a terahertz (THz) wave can be generated from the (001) surface of cleaved Bi$_{textrm{2}}$Se$_{textrm{3}}$ and Cu-doped Bi$_{textrm{2}}$Se$_{textrm{3}}$ single crystals using 800 nm femtosecond pulses. The generated THz power is strongly dependent on the carrier concentration of the crystals. An examination of the dependence reveals the two-channel free carrier absorption to which Dirac fermions are indispensable. Dirac fermions in Bi$_{textrm{2}}$Se$_{textrm{3}}$ are significantly better absorbers of THz radiation than bulk carriers at room temperature. Moreover, the characteristics of THz emission confirm the existence of a recently proposed surface phonon branch that is normalized by Dirac fermions.
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