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Errors in trapped-ion quantum gates due to spontaneous photon scattering

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 Added by Roee Ozeri
 Publication date 2006
  fields Physics
and research's language is English




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We analyze the error in trapped-ion, hyperfine qubit, quantum gates due to spontaneous scattering of photons from the gate laser beams. We investigate single-qubit rotations that are based on stimulated Raman transitions and two-qubit entangling phase-gates that are based on spin-dependent optical dipole forces. This error is compared between different ion species currently being investigated as possible quantum information carriers. For both gate types we show that with realistic laser powers the scattering error can be reduced to below current estimates of the fault-tolerance error threshold.



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We propose an architecture and methodology for large-scale quantum simulations using hyperfine states of trapped-ions in an arbitrary-layout microtrap array with laserless interactions. An ion is trapped at each site, and the electrode structure provides for the application of single and pairwise evolution operators using only locally created microwave and radio-frequency fields. The avoidance of short-lived atomic levels during evolution effectively eliminates errors due to spontaneous scattering; this may allow scaling of quantum simulators based on trapped ions to much larger systems than currently estimated. Such a configuration may also be particularly appropriate for one-way quantum computing with trapped-ion cluster states.
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We demonstrate laser-driven two-qubit and single-qubit logic gates with fidelities 99.9(1)% and 99.9934(3)% respectively, significantly above the approximately 99% minimum threshold level required for fault-tolerant quantum computation, using qubits stored in hyperfine ground states of calcium-43 ions held in a room-temperature trap. We study the speed/fidelity trade-off for the two-qubit gate, for gate times between 3.8$mu$s and 520$mu$s, and develop a theoretical error model which is consistent with the data and which allows us to identify the principal technical sources of infidelity.
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