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Register a new userCharacterization and Modeling of Non-Uniform Charge Collection in CVD Diamond Pixel Detectors
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A pixel detector with a CVD diamond sensor has been studied in a 180 GeV/c pion beam. The charge collection properties of the diamond sensor were studied as a function of the track position, which was measured with a silicon microstrip telescope. Non-uniformities were observed on a length scale comparable to the diamond crystallites size. In some regions of the sensor, the charge drift appears to have a component parallel to the sensor surface (i.e., normal to the applied electric field) resulting in systematic residuals between the track position and the hits position as large as 40 $mu$m. A numerical simulation of the charge drift in polycrystalline diamond was developed to compute the signal induced on the electrodes by the electrons and holes released by the passing particles. The simulation takes into account the crystallite structure, non-uniform trapping across the sensor, diffusion and polarization effects. It is in qualitative agreement with the data. Additional lateral electric field components result from the non-uniform trapping of charges in the bulk. These provide a good explanation for the large residuals observed.
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Diamond is a material in use at many nuclear and high energy facilities due to its inherent radiation tolerance and ease of use. We have characterized detectors based on chemical vapor deposition (CVD) diamond before and after proton irradiation. We present preliminary results of the spatial resolution of unirradiated and irradiated CVD diamond strip sensors. In addition, we measured the pulse height versus particle rate of unirradiated and irradiated polycrystalline CVD (pCVD) diamond pad detectors up to a particle flux of $20,mathrm{MHz/cm^2}$ and a fluence up to $4 times 10^{15},n/mathrm{cm^2}$.
This article introduces a design of a Low Noise Amplifier (LNA), for the field of diamond particle detectors. This amplifier is described from simulation to measurements, which include pulses from {alpha} particles detection. In hadron therapy, with high-frequency pulsed particle beams, the diamond detector is a promising candidate for beam monitoring and time-stamping, with prerequisite of fast electronics. The LNA is designed with surface mounted components and RF layout techniques to control costs and to allow timing performance suitable for sub-nanosecond edges of pulses. Also this amplifier offers the possibility of high voltage biasing, a characteristic essential for driving diamond detectors. Finally the greatest asset of this study is certainly the minimization of the power consumption, which allows us to consider designs with multiple amplifiers, in limited space, for striped diamond detectors.
The barrel region of the CMS pixel detector will be equipped with ``n-in-n type silicon sensors. They are processed on DOFZ material, use the moderated p-spray technique and feature a bias grid. The latter leads to a small fraction of the pixel area to be less sensitive to particles. In order to quantify this inefficiency prototype pixel sensors irradiated to particle fluences between $4.7times 10^{13}$ and $2.6times 10^{15} Neq$ have been bump bonded to un-irradiated readout chips and tested using high energy pions at the H2 beam line of the CERN SPS. The readout chip allows a non zero suppressed analogue readout and is therefore well suited to measure the charge collection properties of the sensors. In this paper we discuss the fluence dependence of the collected signal and the particle detection efficiency. Further the position dependence of the efficiency is investigated.
We have modeled laser-induced transient current waveforms in radiation coplanar grid detectors. Poissons equation has been solved by finite element method and currents induced by photo-generated charge were obtained using Shockley-Ramo theorem. The spectral response on a radiation flux has been modeled by Monte-Carlo simulations. We show 10$times$ improved spectral resolution of coplanar grid detector using differential signal sensing. We model the current waveform dependence on doping, depletion width, diffusion and detector shielding and their mutual dependence is discussed in terms of detector optimization. The numerical simulations are successfully compared to experimental data and further model simplifications are proposed. The space charge below electrodes and a non-homogeneous electric field on a coplanar grid anode are found to be the dominant contributions to laser-induced transient current waveforms.
The replacement of the existing endcap calorimeter in the Compact Muon Solenoid (CMS) detector for the high-luminosity LHC (HL-LHC), scheduled for 2027, will be a high granularity calorimeter. It will provide detailed position, energy, and timing information on electromagnetic and hadronic showers in the immense pileup of the HL-LHC. The High Granularity Calorimeter (HGCAL) will use 120-, 200-, and 300-$mutextrm{m}$ thick silicon (Si) pad sensors as the main active material and will sustain 1-MeV neutron equivalent fluences up to about $10^{16}~textrm{n}_textrm{eq}textrm{cm}^{-2}$. In order to address the performance degradation of the Si detectors caused by the intense radiation environment, irradiation campaigns of test diode samples from 8-inch and 6-inch wafers were performed in two reactors. Characterization of the electrical and charge collection properties after irradiation involved both bulk polarities for the three sensor thicknesses. Since the Si sensors will be operated at -30 $^circ$C to reduce increasing bulk leakage current with fluence, the charge collection investigation of 30 irradiated samples was carried out with the infrared-TCT setup at -30 $^circ$C. TCAD simulation results at the lower fluences are in close agreement with the experimental results and provide predictions of sensor performance for the lower fluence regions not covered by the experimental study. All investigated sensors display 60$%$ or higher charge collection efficiency at their respective highest lifetime fluences when operated at 800 V, and display above 90$%$ at the lowest fluence, at 600 V. The collected charge close to the fluence of $10^{16}~textrm{n}_textrm{eq}textrm{cm}^{-2}$ exceeds 1 fC at voltages beyond 800 V.
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