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Register a new userImaging of Low Compressibility Strips in the Quantum Hall Liquid
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Using Subsurface Charge Accumulation scanning microscopy we image strips of low compressibility corresponding to several integer Quantum Hall filling factors. We study in detail the strips at Landau level filling factors $ u =$ 2 and 4. The observed strips appear significantly wider than predicted by theory. We present a model accounting for the discrepancy by considering a disorder-induced nonzero density of states in the cyclotron gap.
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We use dynamic scanning capacitance microscopy (DSCM) to image compressible and incompressible strips at the edge of a Hall bar in a two-dimensional electron gas (2DEG) in the quantum Hall effect (QHE) regime. This method gives access to the complex local conductance, Gts, between a sharp metallic tip scanned across the sample surface and ground, comprising the complex sample conductance. Near integer filling factors we observe a bright stripe along the sample edge in the imaginary part of Gts. The simultaneously recorded real part exhibits a sharp peak at the boundary between the sample interior and the stripe observed in the imaginary part. The features are periodic in the inverse magnetic field and consistent with compressible and incompressible strips forming at the sample edge. For currents larger than the critical current of the QHE break-down the stripes vanish sharply and a homogeneous signal is recovered, similar to zero magnetic field. Our experiments directly illustrate the formation and a variety of properties of the conceptually important QHE edge states at the physical edge of a 2DEG.
We numerically investigate the interplay of disorder and electron-electron interactions in the integer quantum Hall effect. In particular, we focus on the behaviour of the electronic compressibility as a function of magnetic field and electron density. We find manifestations of non-linear screening and charging effects around integer filling factors, consistent with recent imaging experiments. Our calculations exhibit $g$-factor enhancement as well as strong overscreening in the centre of the Landau bands. Even though the critical behaviour appears mostly unaffected by interactions, important implications for the phase diagram arise. Our results are in very good agreement with the experimental findings and strongly support the relevance of electron-electron interactions for understanding integer quantum Hall physics.
We study the effect of electron-electron interactions on the charge and spin structures of a Quantum Hall strip in a triangularly confined potential. We find that the strip undergoes a spin-unpolarized to spin-polarized transition as a function of magnetic field perpendicular to the strip. For sharp confinements the spin-polarization transition is spontaneous and first develops at the softer side of the triangular potential which shows up as an eye-structure in the electron dispersion. For sufficiently weak confinements this spin-polarization transition is preceded by a charge reconstruction of a single spin species, which creates a spin-polarized strip of electrons with a width of the order of the magnetic length detached from the rest of the system. Relevance of our findings to the recent momentum resolved tunneling experiments is also discussed.
We determine the energy splitting of the conduction-band valleys in two-dimensional electrons confined to low-disorder Si quantum wells. We probe the valley splitting dependence on both perpendicular magnetic field $B$ and Hall density by performing activation energy measurements in the quantum Hall regime over a large range of filling factors. The mobility gap of the valley-split levels increases linearly with $B$ and is strikingly independent of Hall density. The data are consistent with a transport model in which valley splitting depends on the incremental changes in density $eB/h$ across quantum Hall edge strips, rather than the bulk density. Based on these results, we estimate that the valley splitting increases with density at a rate of 116 $mu$eV/10$^{11}$cm$^{-2}$, consistent with theoretical predictions for near-perfect quantum well top interfaces.
We have performed low-temperature transport measurements on a GaAs two-dimensional electron system at low magnetic fields. Multiple temperature-independent points and accompanying oscillations are observed in the longitudinal resistivity between the low-field insulator and the quantum Hall (QH) liquid. Our results support the existence of an intermediate regime, where the amplitudes of magneto-oscillations can be well described by conventional Shubnikov-de Haas theory, between the low-field insulator and QH liquid.
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