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Register a new userEffect of quantum Hall edge strips on valley splitting in silicon quantum wells
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We determine the energy splitting of the conduction-band valleys in two-dimensional electrons confined to low-disorder Si quantum wells. We probe the valley splitting dependence on both perpendicular magnetic field $B$ and Hall density by performing activation energy measurements in the quantum Hall regime over a large range of filling factors. The mobility gap of the valley-split levels increases linearly with $B$ and is strikingly independent of Hall density. The data are consistent with a transport model in which valley splitting depends on the incremental changes in density $eB/h$ across quantum Hall edge strips, rather than the bulk density. Based on these results, we estimate that the valley splitting increases with density at a rate of 116 $mu$eV/10$^{11}$cm$^{-2}$, consistent with theoretical predictions for near-perfect quantum well top interfaces.
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We use dynamic scanning capacitance microscopy (DSCM) to image compressible and incompressible strips at the edge of a Hall bar in a two-dimensional electron gas (2DEG) in the quantum Hall effect (QHE) regime. This method gives access to the complex local conductance, Gts, between a sharp metallic tip scanned across the sample surface and ground, comprising the complex sample conductance. Near integer filling factors we observe a bright stripe along the sample edge in the imaginary part of Gts. The simultaneously recorded real part exhibits a sharp peak at the boundary between the sample interior and the stripe observed in the imaginary part. The features are periodic in the inverse magnetic field and consistent with compressible and incompressible strips forming at the sample edge. For currents larger than the critical current of the QHE break-down the stripes vanish sharply and a homogeneous signal is recovered, similar to zero magnetic field. Our experiments directly illustrate the formation and a variety of properties of the conceptually important QHE edge states at the physical edge of a 2DEG.
(111) Silicon quantum wells have been studied extensively, yet no convincing explanation exists for the experimentally observed breaking of 6 fold valley degeneracy into 2 and 4 fold degeneracies. Here, systematic sp3d5s* tight-binding and effective mass calculations are presented to show that a typical miscut modulates the energy levels which leads to breaking of 6 fold valley degeneracy into 2 lower and 4 raised valleys. An effective mass based valley-projection model is used to determine the directions of valley-minima in tight-binding calculations of large supercells. Tight-binding calculations are in better agreement with experiments compared to effective mass calculations.
The quantum Hall effect is necessarily accompanied by low-energy excitations localized at the edge of a two-dimensional electron system. For the case of electrons interacting via the long-range Coulomb interaction, these excitations are edge magnetoplasmons. We address the time evolution of localized edge-magnetoplasmon wave packets. On short times the wave packets move along the edge with classical E cross B drift. We show that on longer times the wave packets can have properties similar to those of the Rydberg wave packets that are produced in atoms using short-pulsed lasers. In particular, we show that edge-magnetoplasmon wave packets can exhibit periodic revivals in which a dispersed wave packet reassembles into a localized one. We propose the study of edge-magnetoplasmon wave packets as a tool to investigate dynamical properties of integer and fractional quantum-Hall edges. Various scenarios are discussed for preparing the initial wave packet and for detecting it at a later time. We comment on the importance of magnetoplasmon-phonon coupling and on quantum and thermal fluctuations.
In this paper, we review recent developments in the emerging field of electron quantum optics, stressing analogies and differences with the usual case of photon quantum optics. Electron quantum optics aims at preparing, manipulating and measuring coherent single electron excitations propagating in ballistic conductors such as the edge channels of a 2DEG in the integer quantum Hall regime. Because of the Fermi statistics and the presence of strong interactions, electron quantum optics exhibits new features compared to the usual case of photon quantum optics. In particular, it provides a natural playground to understand decoherence and relaxation effects in quantum transport.
Although silicon is a promising material for quantum computation, the degeneracy of the conduction band minima (valleys) must be lifted with a splitting sufficient to ensure formation of well-defined and long-lived spin qubits. Here we demonstrate that valley separation can be accurately tuned via electrostatic gate control in a metal-oxide-semiconductor quantum dot, providing splittings spanning 0.3 - 0.8 meV. The splitting varies linearly with applied electric field, with a ratio in agreement with atomistic tight-binding predictions. We demonstrate single-shot spin readout and measure the spin relaxation for different valley configurations and dot occupancies, finding one-electron lifetimes exceeding 2 seconds. Spin relaxation occurs via phonon emission due to spin-orbit coupling between the valley states, a process not previously anticipated for silicon quantum dots. An analytical theory describes the magnetic field dependence of the relaxation rate, including the presence of a dramatic rate enhancement (or hot-spot) when Zeeman and valley splittings coincide.
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