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Register a new userThe Superconductor-Insulator Transition in 2D
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The superconductor-insulator transition of ultrathin films of bismuth, grown on liquid helium cooled substrates, has been studied. The transition was tuned by changing both film thickness and perpendicular magnetic field. Assuming that the transition is controlled by a T=0 critical point, a finite size scaling analysis was carried out to determine the correlation length exponent v and the dynamical critical exponent z. The phase diagram and the critical resistance have been studied as a function of film thickness and magnetic field. The results are discussed in terms of bosonic models of the superconductor-insulator transition, as well as the percolation models which predict finite dissipation at T=0.
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The effect of an electric field on the conductance of ultrathin films of metals deposited on substrates coated with a thin layer of amorphous Ge was investigated. A contribution to the conductance modulation symmetric with respect to the polarity of the applied electric field was found in regimes in which there was no sign of glassy behavior. For films with thicknesses that put them on the insulating side of the superconductor-insulator transition, the conductance increased with electric field, whereas for films that were becoming superconducting it decreased. Application of magnetic fields to the latter, which reduce the transition temperature and ultimately quench superconductivity, changed the sign of the reponse of the conductance to electric field back to that found for insulators. We propose that this symmetric response to capacitive charging is a consequence of changes in the conductance of the a-Ge layer, and is not a fundamental property of the physics of the superconductor-insulator transition as previously suggested.
It is well known that the metal-insulator transition in two dimensions for non-interacting fermions takes place at infinitesimal disorder. In contrast, the superconductor-to-insulator transition takes place at a finite critical disorder (on the order of V_c ~ 2t), where V is the typical width of the distribution of random site energies and t is the hopping scale. In this article we compare the localization/delocalization properties of one and two particles. Whereas the metal-insulator transition is a consequence of single-particle Anderson localization, the superconductor-insulator transition (SIT) is due to pair localization - or, alternatively, fluctuations of the phase conjugate to pair density. The central question we address is how superconductivity emerges from localized single-particle states. We address this question using inhomogeneous mean field theory and quantum Monte Carlo techniques and make several testable predictions for local spectroscopic probes across the SIT. We show that with increasing disorder, the system forms superconducting blobs on the scale of the coherence length embedded in an insulating matrix. In the superconducting state, the phases on the different blobs are coherent across the system whereas in the insulator long-range phase coherence is disrupted by quantum fluctuations. As a consequence of this emergent granularity, we show that the single-particle energy gap in the density of states survives across the transition, but coherence peaks exist only in the superconductor. A characteristic pseudogap persists above the critical disorder and critical temperature, in contrast to conventional theories. Surprisingly, the insulator has a two-particle gap scale that vanishes at the SIT despite a robust single-particle gap.
In this communication, we numerically studied disordered quantum transport in a quantum anomalous Hall insulator-superconductor junction based on the effective edge model approach. In particular, we focus on the parameter regime with the free mean path due to elastic scattering much smaller than the sample size and discuss disordered transport behaviors in the presence of different numbers of chiral edge modes, as well as non-chiral metallic modes. Our numerical results demonstrate that the presence of multiple chiral edge modes or non-chiral metallic modes will lead to a strong Andreev conversion, giving rise to half-electron half-hole transmission through the junction structure, in sharp contrast to the suppression of Andreev conversion in the single chiral edge mode case. Our results suggest the importance of additional transport modes in the quantum anomalous Hall insulator-superconductor junction and will guide the future transport measurements.
The superconducting-insulator transition is simulated in disordered networks of Josephson junctions with thermally activated Arrhenius-like resistive shunt. By solving the conductance matrix of the network, the transition is reproduced in different experimental conditions by tuning thickness, charge density and disorder degree. In particular, on increasing fluctuations of the parameters entering the Josephson coupling and the Coulomb energy of the junctions, the transition occurs for decreasing values of the critical temperature Tc and increasing values of the activation temperature To. The results of the simulation compare well with recent experiments where the mesoscopic fluctuations of the phase have been suggested as the mechanism underlying the phenomenon of emergent granularity in otherwise homogeneous films. The proposed approach is compared with the results obtained on TiN films and nanopatterned arrays of weak-links, where the superconductor-insulator transition is directly stimulated.
We have studied the thickness-induced superconductor-to-insulator transition in the presence of a magnetic field for a-NbSi thin films. Analyzing the critical behavior of this system within the dirty boson model, we have found a critical exponents product of $ u_d z$ > 0.4. The corresponding phase diagram in the (H,d) plane is inferred. This small exponent product as well as the non-universal value of the critical resistance found at the transition call for further investigations in order to thoroughly understand these transitions.
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