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Register a new userPhenomenological theory of phase transitions in epitaxial BaTiO3 thin films
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We develop a phenomenological thermodynamic theory of ferroelectric BaTiO3 (BT) thin films epitaxially grown on cubic substrates using the Landau-Devonshire eight-order potential. The constructed misfit-temperature phase diagram is asymmetrical. We found that, overall view of the phase diagram depends on the values of compliances used in calculations and provide two qualitatively different diagrams. A thermodynamic path for BT film grown onto particular substrate can be found using a plot of the room-temperature tetragonal distortion (c-a)/a as a function of misfit strain.
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A phenomenological thermodynamic theory of BaxSr(1-x)TiO3 (BST-x) thin films epitaxially grown on cubic substrates is developed using the Landau-Devonshire approach. The eighth-order thermodynamic potential for BT single crystal and modified fourth-order potential for ST single crystal were used as starting potentials for the end-members of the solid solution with the aim to develop potential of BST-$x$ solid solution valid at high temperatures. Several coefficients of these potentials for BT were changed to obtain reasonable agreement between theory and experimental phase diagram for BST-x (x > 0.2) solid solutions. For low Ba content we constructed the specific phase diagram where five phases converge at the multiphase point (T_N2 = 47 K, x = 0.028) and all transitions are of the second order. The concentration-misfit strain phase diagrams for BST-x thin films at room temperature and temperature-misfit strain phase diagrams for particular concentrations are constructed and discussed. Near T_N2 coupling between polarization and structural order parameter in the epitaxial film is modified considerably and large number of new phases not present in the bulk materials appear on the phase diagram.
Ferroelectric BaTiO3 films with large polarization have been integrated with Si(001) by pulsed laser deposition. High quality c-oriented epitaxial films are obtained in a substrate temperature range of about 300 deg C wide. The deposition temperature critically affects the growth kinetics and thermodynamics balance, resulting on a high impact in the strain of the BaTiO3 polar axis, which can exceed 2% in films thicker than 100 nm. The ferroelectric polarization scales with the strain and therefore deposition temperature can be used as an efficient tool to tailor ferroelectric polarization. The developed strategy overcomes the main limitations of the conventional strain engineering methodologies based on substrate selection: it can be applied to films on specific substrates including Si(001) and perovskites, and it is not restricted to ultrathin films.
We have investigated the electronic and optical properties of epitaxial La1-xSrxFeO3 for x from 0 to 1 prepared by molecular beam epitaxy. Core-level and valence-band x-ray photoemission features monotonically shift to lower binding energy with increasing x, indicating downward movement of the Fermi level toward to the valence band maximum. Both Fe 2p and O 1s spectra broaden to higher binding energy with increasing x, consistent with delocalization of Sr-induced holes in the Fe 3d/O 2p hybridized valence band. Combining X-ray valence band photoemission and O K-edge x-ray absorption data, we map the evolution of the occupied and unoccupied bands and observe a narrowing of the gap, along with a transfer of state density from just below to just above the Fermi level, resulting from hole doping. In-plane transport measurements confirm that the material becomes a p-type semiconductor at lower doping levels and exhibits a insulator-to-metal transition at x equal to 1. Sub-gap optical transitions revealed by spectroscopic ellipsometry are explained based on insight from theoretical densities of states and first-principles calculations of optical absorption spectra.
The lattice of (001)-oriented BiFeO$_3$ epitaxial thin film has been identified by synchrotron x-ray diffraction. By choosing proper scattering zones containing the fixed (001) reflection, we have shown that low-symmetry phases similar to a $M_A$ phase exist in the thin film at room temperature. These results demonstrate a change in phase stability from rhombohedral in bulk single crystals, to a modified monoclinic structure in epitaxial thin films.
Ordering of mobile defects in functional materials can give rise to fundamentally new phases possessing ferroic and multiferroic functionalities. Here we develop the Landau theory for strain induced ordering of defects (e.g. oxygen vacancies) in thin oxide films, considering both the ordering and wavelength of possible instabilities. Using derived analytical expressions for the energies of various defect-ordered states, we calculated and analyzed phase diagrams dependence on the film-substrate mismatch strain, concentration of defects, and Vegard coefficients. Obtained results open possibilities to create and control superstructures of ordered defects in thin oxide films by selecting the appropriate substrate and defect concentration.
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