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Register a new userInfluence of surface passivation on ultrafast carrier dynamics and terahertz radiation generation in GaAs
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The carrier dynamics of photoexcited electrons in the vicinity of the surface of (NH4)2S-passivated GaAs were studied via terahertz (THz) emission spectroscopy and optical-pump THz-probe spectroscopy. THz emission spectroscopy measurements, coupled with Monte Carlo simulations of THz emission, revealed that the surface electric field of GaAs reverses after passivation. The conductivity of photoexcited electrons was determined via optical-pump THz-probe spectroscopy, and was found to double after passivation. These experiments demonstrate that passivation significantly reduces the surface state density and surface recombination velocity of GaAs. Finally, we have demonstrated that passivation leads to an enhancement in the power radiated by photoconductive switch THz emitters, thereby showing the important influence of surface chemistry on the performance of ultrafast THz photonic devices.
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We discuss the ultrafast evolution of the surface electronic structure of the topological insulator Bi$_2$Te$_3$ following a femtosecond laser excitation. Using time and angle resolved photoelectron spectroscopy, we provide a direct real-time visualisation of the transient carrier population of both the surface states and the bulk conduction band. We find that the thermalization of the surface states is initially determined by interband scattering from the bulk conduction band, lasting for about 0.5 ps; subsequently, few ps are necessary for the Dirac cone non-equilibrium electrons to recover a Fermi-Dirac distribution, while their relaxation extends over more than 10 ps. The surface sensitivity of our measurements makes it possible to estimate the range of the bulk-surface interband scattering channel, indicating that the process is effective over a distance of 5 nm or less. This establishes a correlation between the nanoscale thickness of the bulk charge reservoir and the evolution of the ultrafast carrier dynamics in the surface Dirac cone.
Ultrafast time-resolved differential reflectivity of Bi2Se3 crystals is studied using optical pump-probe spectroscopy. Three distinct relaxation processes are found to contribute to the initial transient reflectivity changes. The deduced relaxation timescale and the sign of the reflectivity change suggest that electron-phonon interactions and defect-induced charge trapping are the underlying mechanisms for the three processes. After the crystal is exposed to air, the relative strength of these processes is altered and becomes strongly dependent on the excitation photon energy.
We compare the observed strong saturation of the free carrier absorption in n-type semiconductors at 300 K in the terahertz frequency range when single-cycle pulses with intensities up to 150 MW/cm2 are used. In the case of germanium, a small increase of the absorption occurs at intermediate THz pulse energies. The recovery of the free carrier absorption was monitored by time-resolved THz-pump/THz-probe measurements. At short probe delay times, the frequency response of germanium cannot be fitted by the Drude model. We attribute these unique phenomena of Ge to dynamical overpopulation of the high mobility gamma conduction band valley.
Topological insulators with their topological protected surface states are highly promising quantum materials. In this article the micro-flakes of single-crystalline topological insulators Bi2Te3 and Sb2Te3 are explored through physical parameter measurement at low temperatures and thereby the charge carrier dynamics are investigated at 5K to study the various optical transitions related to these surface states. The magnetoresistance is experimentally investigated at temperatures of 5K and 100K for a field range of 1Tesla. The occurrence of the weak anti-localization effect predicts the presence of topologically protected surface states in the systems. Further, the ultrafast femtosecond transient reflectance spectroscopy is performed at different temperatures, varying from a room temperature (300K) to a low temperature of 5K, to find the TSS related transitions at low temperatures.
We report a comprehensive study of ultrafast carrier dynamics in single crystals of multiferroic BiFeO$_{3}$. Using femtosecond optical pump-probe spectroscopy, we find that the photoexcited electrons relax to the conduction band minimum through electron-phonon coupling with a $sim$1 picosecond time constant that does not significantly change across the antiferromagnetic transition. Photoexcited electrons subsequently leave the conduction band and primarily decay via radiative recombination, which is supported by photoluminescence measurements. We find that despite the coexisting ferroelectric and antiferromagnetic orders in BiFeO$_{3}$, the intrinsic nature of this charge-transfer insulator results in carrier relaxation similar to that observed in bulk semiconductors.
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