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Register a new userResponse to Comment on `Performance of a spin-based insulated gate field effect transistor [Appl. Phys. Lett. 88, 162503 (2006), cond-mat/0603260] [cond-mat/0604532]
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Added by
Michael E. Flatt\\'e
Publication date
2006
fields
Physics
and research's language is
English
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A recent e-print (cond-mat/0604532) presented a proposed Comment to Applied Physics Letters on our publication Appl. Phys. Lett. 88, 162503 (2006), cond-mat/0603260. Here is our Response. As the proposed Comment has now been rejected by Applied Physics Letters, neither the Comment nor the Response will be published in Applied Physics Letters in this form.
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Fundamental physical properties limiting the performance of spin field effect transistors are compared to those of ordinary (charge-based) field effect transistors. Instead of raising and lowering a barrier to current flow these spin transistors use static spin-selective barriers and gate control of spin relaxation. The different origins of transistor action lead to distinct size dependences of the power dissipation in these transistors and permit sufficiently small spin-based transistors to surpass the performance of charge-based transistors at room temperature or above. This includes lower threshold voltages, smaller gate capacitances, reduced gate switching energies and smaller source-drain leakage currents.
We comment on recent e-print by L. Mardoyan et al. [cond-mat/0609768]
In cond-mat/0107371, Mendonca proposes that diffusion can change the universality class of a parity-conserving reaction-diffusion process. In this comment we suggest that this cannot happen, due to symmetry arguments. We also present numerical results from lattice simulations which support these arguments, and mention a previous result supporting this conclusion.
An analytical result for the renormalization of the jump of the heat capacity Delta C/C_N by the anisotropy of the order parameter is derived within the framework of the very recent model proposed by Posazhennikova, Dahm and Maki [cond-mat/0204272, submitted to Europhys. Lett.], for both oblate and prolate anisotropy. The graph of Delta C/C_N versus the ratio of the gaps on the equator and the pole of the Fermi surface, Delta_e/Delta_p, allows a direct determination of the gap anisotropy parameter Delta_e/Delta_p by fitting data from specific heat measurements Delta C/C_N. Using the experimental value Delta C/C_N=0.82 +/- 10% by Wang, Plackowski, and Junod [Physica C 355 (2001) 179] we find Delta_e/Delta_p = 4.0.
We recently reported measurements of spin polarization in W and Pt thin films produced by the spin Hall effect (SHE) using a magneto-optic Kerr effect (MOKE) system based on crossed polarizers that detects changes in light intensity. Riego et al used a generalized magneto-optical ellipsometry system that in principle can distinguish pure optical reflectivity from magneto-optic signals, but were unable to detect SHE polarization in their nominally W, Ta and Pt films. They argued that our results are spurious and likely due to resistive heating which temporally modulates the film temperature and reflectivity, and that any SHE polarization is too small to be detected in metal films. In this comment, we argue that our original results are correct as presented, and discuss why
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