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Register a new userInstabilities of switching processes in synthetic antiferromagnets
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It is shown that magnetic states and field-driven reorientation transitions in synthetic antiferromagnets crucially depend on contributions of higher-order anisotropies. A phenomenological macrospin model is derived to describe the magnetic states of two antiferromagnetically coupled magnetic thin film elements. The calculated phase diagrams show that magnetic states with out-of-plane magnetization, symmetric escaped spin-flop phases, exist in a broad range of the applied magnetic field. Due to the formation of such states and concomitant multidomain patterns, the switching processes in toggle magnetic random access memory devices (MRAM) can radically deviate from predictions within oversimplified models.
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We simulate the switching behavior of nanoscale synthetic antiferromagnets (SAFs), inspired by recent experimental progress in spin-orbit-torque switching of crystal antiferromagnets. The SAF consists of two ferromagnetic thin films with in-plane biaxial anisotropy and interlayer exchange coupling. Staggered field-like Rashba spin-orbit torques from the opposite surfaces of the SAF induce a canted net magnetization, which triggers an orthogonal torque that drives 90$^circ$ switching of the Neel vector. Such dynamics driven by the field-like spin-orbit torque allows for faster switching with increased Gilbert damping, without a significant detrimental increase of the threshold switching current density. Our results point to the potential of SAFs as model systems, based on simple ferromagnetic metals, to mimic antiferromagnetic device physics.
Magnetic solitons are twisted spin configurations, which are characterized by a topological integer (textit{Q}) and helicity ($gamma$). Due to their quasi-particle properties, relatively smaller size, and the potential to set themselves into motion with smaller critical current densities than domain walls, they hold promising aspects as bits of information in future magnetic logic and memory devices. System having Dzyaloshinskii-Moriya Interaction (DMI) prefers a particular rotational sense, which determines a single value of Q and $gamma$. However, the case of frustrated ferromagnet is of particular interest since solitons with different $Q$ and $gamma$ can be stabilized. Recently, higher order skyrmion($Q>2$) and coexistence of skyrmion and antiskyrmion in frustrated ferromagnets has been predicted using $J_1$--$J_2$--$J_3$ classical Heisenberg model. cite{zxcv} In this work, we modelled a synthetic antiferromagnet (SAF) system to co-exist both skyrmion and antiskyrmion, but without considering frustrated exchange interaction. The bottom layer of the SAF has isotropic DMI and the top layer has anisotropic DMI. The presence of antiskyrmion and skyrmion in the two different layers may induce magnetic frustration in the SAF. Here we have varied the strength of Ruderman--Kittel--Kasuya--Yosida (RKKY) coupling as a perturbation and observed 6 novel elliptical skyrmionic states. We have observed that skyrmionic states have a 3 fold degeneracy and another two fold degeneracy. We also report a novel elliptical Q = 0 state.
The exchange coupling underlies ferroic magnetic coupling and is thus the key element that governs statics and dynamics of magnetic systems. This fundamental interaction comes in two flavors - symmetric and antisymmetric coupling. While symmetric coupling leads to ferro- and antiferromagnetism, antisymmetric coupling has attracted significant interest owing to its major role in promoting topologically non-trivial spin textures that promise high-speed and energy-efficient devices. So far, the antisymmetric exchange coupling rather short-ranged and limited to a single magnetic layer has been demonstrated, while the symmetric coupling also leads to long-range interlayer exchange coupling. Here, we report the missing component of the long-range antisymmetric interlayer exchange coupling in perpendicularly magnetized synthetic antiferromagnets with parallel and antiparallel magnetization alignments. Asymmetric hysteresis loops under an in-plane field unambiguously reveal a unidirectional and chiral nature of this novel interaction, which cannot be accounted for by existing coupling mechanisms, resulting in canted magnetization alignments. This can be explained by spin-orbit coupling combined with reduced symmetry in multilayers. This new class of chiral interaction provides an additional degree of freedom for engineering magnetic structures and promises to enable a new class of three-dimensional topological structures.
The magnon-magnon coupling in synthetic antiferromagnets advances it as hybrid magnonic systems to explore the quantum information technologies. To induce the magnon-magnon coupling, the parity symmetry between two magnetization needs to be broken. Here we experimentally demonstrate a convenient method to break the parity symmetry by the asymmetric thickness of two magnetic layers and thus introduce a magnon-magnon coupling in Ir-based synthetic antiferromagnets CoFeB(10 nm)/Ir(tIr=0.6 nm, 1.2 nm)/CoFeB(13 nm). Remarkably, we find that the weakly uniaxial anisotropy field (~ 20 Oe) makes the magnon-magnon coupling anisotropic. The coupling strength presented by a characteristic anticrossing gap varies in the range between 0.54 GHz and 0.90 GHz for tIr =0.6 nm, and between nearly zero to 1.4 GHz for tIr = 1.2 nm, respectively. Our results demonstrate a feasible way to induce the magnon-magnon coupling by an asymmetric structure and tune the coupling strength by varying the direction of in-plane magnetic field. The magnon-magnon coupling in this highly tunable material system could open exciting perspectives for exploring quantum-mechanical coupling phenomena.
Domain-wall magnetoresistance and low-frequency noise have been studied in epitaxial antiferromagnetically-coupled [Fe/Cr(001)]_10 multilayers and ferromagnetic Co line structures as a function of DC current intensity. In [Fe/Cr(001)]_10 multilayers a transition from excess to suppressed domain-wall induced 1/f noise above current densities of j_c ~ 2*10^5 A/cm^2 has been observed. In ferromagnetic Co line structures the domain wall related noise remains qualitatively unchanged up to current densities exceeding 10^6A/cm^2. Theoretical estimates of the critical current density for a synthetic Fe/Cr antiferromagnet suggest that this effect may be attributed to current-induced domain-wall motion that occurs via spin transfer torques.
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