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Flux-flow resistivity anisotropy in the instability regime in the a-b plane of epitaxial YBCO thin films

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 Added by Gad Koren
 Publication date 2006
  fields Physics
and research's language is English




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Measurements of the nonlinear flux-flow resistivity $rho$ and the critical vortex velocity $rm v^*_phi$ at high voltage bias close to the instability regime predicted by Larkin and Ovchinnikov cite{LO} are reported along the node and antinode directions of the d-wave order parameter in the textit{a-b} plane of epitaxial $YBa_2Cu_3O_{7-delta}$ films. In this pinning-free regime, $rho$ and $rm v^*_phi$ are found to be anisotropic with values in the node direction larger on average by 10% than in the antinode direction. The anisotropy of $rho$ is almost independent of temperature and field. We attribute the observed results to the anisotropic quasiparticle distribution on the Fermi surface of $YBa_2Cu_3O_{7-delta}$.



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The flux flow properties of epitaxial niobium films with different pinning strengths are investigated by dc electrical resistance measurements and mapped to results derived within the framework of a theoretical model. Investigated are the cases of weak random pinning in as-grown films, strong random pinning in Ga ion-irradiated films, and strong periodic pinning induced by a nanogroove array milled by focused ion beam. The generic feature of the current-voltage curves of the films consists in instability jumps to the normal state at some instability current density $j^ast$ as the vortex lattice reaches its critical velocity $v^ast$. While $v^ast(B)$ monotonically decreases for as-grown films, the irradiated films exhibit a non-monotonic dependence $v^ast(B)$ attaining a maximum in the low-field range. In the case of nanopatterned films, this broad maximum is accompanied by a much sharper maximum in both, $v^ast(B)$ and $j^ast(B)$, which we attribute to the commensurability effect when the spacing between the vortex rows coincides with the location of the grooves. We argue that the observed behavior of $v^ast(B)$ can be explained by the pinning effect on the vortex flow instability and support our claims by fitting the experimental data to theoretical expressions derived within a model accounting for the field dependence of the depinning current density.
113 - L. Liu , T. Mikami , M. Takahashi 2015
We systematically investigated the anisotropic in-plane resistivity of the iron telluride including three kinds of impurity atoms: excess Fe, Se substituted for Te, and Cu substituted for Fe. Sizable resistivity anisotropy was found in the magneto-structurally ordered phase whereas the sign is opposite ($rho_a$ $>$ $rho_b$, where the $b$-axis parameter is shorter than the $a$-axis one) to that observed in the transition-metal doped iron arsenides ($rho_a$ $<$ $rho_b$). On the other hand, our results demonstrate that the magnitude of the resistivity anisotropy in the iron tellurides is correlated with the amount of impurities, implying that the resistivity anisotropy originates from an exotic impurity effect like that in the iron arsenides. This suggests that the anisotropic carrier scattering by impurities is a universal phenomenon in the magneto-structurally ordered phase of the iron-based materials.
The stability against quench is one of the main issue to be pursued in a superconducting material which should be able to perform at very high levels of current densities. Here we focus on the connection between the critical current $I_c$ and the quenching current $I^*$ associated to the so-called flux-flow instability phenomenon, which sets in as an abrupt transition from the flux flow state to the normal state. To this purpose, we analyze several current-voltage characteristics of three types of iron-based thin films, acquired at different temperature and applied magnetic field values. For these samples, we discuss the impact of a possible coexistence of intrinsic electronic mechanisms and extrinsic thermal effects on the quenching current dependence upon the applied magnetic field. The differences between the quenching current and the critical current are reported also in the case of predominant intrinsic mechanisms. Carrying out a comparison with high-temperature cuprate superconductors, we suggest which material can be the best trade-off between maximum operating temperature, higher upper critical field and stability under high current bias.
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