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Register a new userHigh-mobility AlAs quantum wells with out-of-plane valley occupation
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Employing state-of-the-art molecular beam epitaxy techniques to grow thin, modulation-doped AlAs quantum wells, we have achieved a low temperature mobility of 5.5 m$^2$/Vs with out-of-plane occupation, an order of magnitude improvement over previous studies. However, due to the narrow well width, mobilities are still limited by scattering due to interface roughness disorder. We demonstrate the successful implementation of a novel technique utilizing thermally-induced, biaxial, tensile strain that forces electrons to occupy the out-of-plane valley in thicker quantum wells, reducing interface roughness scattering and allowing us to achieve mobilities as high as 8.8 m$^2$/Vs.
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We studied a doping series of (110)-oriented AlAs quantum wells (QWs) and observed transport evidence of single anisotropic-mass valley occupancy for the electrons in a 150 AA wide QW. Our calculations of strain and quantum confinement for these samples predict single anisotropic-mass valley occupancy for well widths $W$ greater than 53 AA. Below this, double-valley occupation is predicted such that the longitudinal mass axes are collinear. We observed mobility anisotropy in the electronic transport along the crystallographic directions in the ratio of 2.8, attributed to the mass anisotropy as well as anisotropic scattering of the electrons in the X-valley of AlAs.
Terahertz photoconductivity of $100~mu$m and $20~mu$m Hall bars fabricated from narrow AlAs quantum wells (QWs) of different widths is investigated in this paper. The photoresponse is dominated by collective magnetoplasmon excitations within the body of the Hall structure. We observed a radical change of magnetoplasma spectrum measured precisely for AlAs QWs of width ranging from $4$~nm up to $15$~nm. We have shown that the observed behavior is a vivid manifestation of valley transition taking place in the two-dimensional electron system. Remarkably, we show that photoresponse for AlAs QWs of width $6$~nm features two resonances, indicating simultaneous occupation of strongly anisotropic $X_{x-y}$ valleys and isotropic $X_z$ valley in the QW plane. Our results pave the way to realizing valley-selective layered heterostructures, with potential application in valleytronics.
We study the depolarization of optically oriented electrons in quantum wells subjected to an in-plane magnetic field and show that the Hanle curve drastically depends on the carrier mobility. In low-mobility structures, the Hanle curve is described by a Lorentzian with the width determined by the effective g-factor and the spin lifetime. In contrast, the magnetic field dependence of spin polarization in high-mobility quantum wells is nonmonotonic: The spin polarization rises with the magnetic field induction at small fields, reaches maximum and then decreases. We show that the position of the Hanle curve maximum can be used to directly measure the spin-orbit Rashba/Dresselhaus magnetic field.
Thanks to their multi-valley, anisotropic, energy band structure, two-dimensional electron systems (2DESs) in modulation-doped AlAs quantum wells (QWs) provide a unique platform to investigate electron interaction physics and ballistic transport. Indeed, a plethora of phenomena unseen in other 2DESs have been observed over the past decade. However, a foundation for sample design is still lacking for AlAs 2DESs, limiting the means to achieve optimal quality samples. Here we present a systematic study on the fabrication of modulation-doped AlAs and GaAs QWs over a wide range of AlxGa1-xAs barrier alloy compositions. Our data indicate clear similarities in modulation doping mechanisms for AlAs and GaAs, and provide guidelines for the fabrication of very high quality AlAs 2DESs. We highlight the unprecedented quality of the fabricated AlAs samples by presenting the magnetotransport data for low density (~1X1011 cm2) AlAs 2DESs that exhibit high-order fractional quantum Hall signatures.
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