No Arabic abstract
We present a crystal field theory of transition metal impurities in semiconductors in a trigonally distorted tetrahedral coordination. We develop a perturbative scheme to treat covalency effects within the weak ligand field case (Coulomb interaction dominates over one-particle splitting) and apply it to ZnO:Co$^{2+}$ (3d$^7$). Using the large value of the charge transfer energy $Delta_{pd}$ compared to the $p$-$d$ hoppings, we perform a canonical transformation which eliminates the coupling with ligands to first order. As a result, we obtain an effective single-ion Hamiltonian, where the influence of the ligands is reduced to the one-particle crystal field acting on $d$-like-functions. This derivation allows to elucidate the microscopic origin of various crystal field parameters and covalency reduction factors which are usually used empirically for the interpretation of optical and ESR experiments. The connection of these parameters with the geometry of the local environment becomes transparent. The experimentally known $g$-values and the zero-field splitting 2D are very well reproduced by the exact diagonalization of the effective single-ion Hamiltonian with only one adjustable parameter $Delta _{pd}$. Alternatively to the numerical diagonalization we use perturbation theory in the weak field scheme (Coulomb interaction $gg$ cubic splitting $gg$ trigonal splitting and spin-orbit coupling) to derive compact analytical expressions for the spin-Hamiltonian parameters that reproduce the result of exact diagonalization within 20% of accuracy.
Co doped ZnV2O4 has been investigated by Synchrotron X-ray diffraction, Magnetization measurement and Extended X-ray absorption fine structure (EXAFS) analysis. With Co doping in the Zn site the system moves towards the itinerant electron limit. From Synchrotron and magnetization measurement it is observed that there is an effect in bond lengths and lattice parameters around the magnetic transition temperature. The EXAFS study indicates that Co ion exists in the High spin state in Co doped ZnV2O4.
Understanding new superconductors requires high-quality epitaxial thin films to explore intrinsic electromagnetic properties, control grain boundaries and strain effects, and evaluate device applications. So far superconducting properties of ferropnictide thin films appear compromised by imperfect epitaxial growth and poor connectivity of the superconducting phase. Here we report novel template engineering using single-crystal intermediate layers of (001) SrTiO3 and BaTiO3 grown on various perovskite substrates that enables genuine epitaxial films of Co-doped BaFe2As2 with high transition temperature (zero resistivity Tc of 21.5K), small transition widths (delta Tc = 1.3K), superior Jc of 4.5 MA/cm2 (4.2K, self field) and strong c-axis flux pinning. Implementing SrTiO3 or BaTiO3 templates to match the alkaline earth layer in the Ba-122 with the alkaline earth-oxygen layer in the templates opens new avenues for epitaxial growth of ferropnictides on multi-functional single crystal substrates. Beyond superconductors, it provides a framework for growing heteroepitaxial intermetallic compounds on various substrates by matching interfacial layers between templates and thin film overlayers.
Co-based shandite Co$_3$Sn$_2$S$_2$ is a representative example of magnetic Weyl semimetals showing rich transport phenomena. We thoroughly investigate magnetic and transport properties of hole-doped shandites Co$_3$In$_x$Sn$_{2-x}$S$_2$ by first-principles calculations. The calculations reproduce nonlinear reduction of anomalous Hall conductivity with doping In for Co$_3$Sn$_2$S$_2$, as reported in experiments, against the linearly decreased ferromagnetic moment within virtual crystal approximation. We show that a drastic change in the band parity character of Fermi surfaces, attributed to the nodal rings lifted energetically with In-doping, leads to strong enhancement of anomalous Nernst conductivity with reversing its sign in Co$_3$In$_x$Sn$_{2-x}$S$_2$.
The tetragonal compound YbRu$_{2}$Ge$_{2}$ exhibits a non-magnetic transition at $T_0$=10.2K and a magnetic transition at $T_1$=6.5K in zero magnetic field. We present a model for this material based on a quasi-quartet of Yb$^{3+}$ crystalline electric field (CEF) states and discuss its mean field solution. Taking into account the broadening of the specific heat jump at $T_0$ for magnetic field perpendicular to [001] and the decrease of $T_0$ with magnetic field parallel to [001], it is shown that ferro-quadrupole order of either O$_{2}^{2}$ or O$_{rm xy}$ - type are prime candidates for the non-magnetic transition. Considering the matrix element of these quadrupole moments, we show that the lower CEF states of the level scheme consist of a $Gamma_{6}$ and a $Gamma_{7}$ doublet. This leads to induced type of O$_{2}^{2}$ and O$_{rm xy}$ quadrupolar order parameters. The quadrupolar order introduces exchange anisotropy for planar magnetic moments. This causes a spin flop transition at low fields perpendicular [001] which explains the observed metamagnetism. We also obtain a good explanation for the temperature dependence of magnetic susceptibility and specific heat for fields both parallel and perpendicular to the [001] direction.
We report on the emergence of an Electronic Griffiths Phase (EGP) in the doped semiconductor FeSb$_{2}$, predicted for disordered insulators with random localized moments in the vicinity of a metal-insulator transition (MIT). Magnetic, transport, and thermodynamic measurements of Fe(Sb$_{1-x}$Te$_{x}$)$_{2}$ single crystals show signatures of disorder-induced non-Fermi liquid behavior and a Wilson ratio expected for strong electronic correlations. The EGP states are found on the metallic boundary, between the insulating state ($x = 0$) and a long-range albeit weak magnetic order ($x geq 0.075$).