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Register a new userKinetic stabilization of Fe film on GaAs(100): An in situ x-ray reflectivity Study
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We study the growth of the Fe films on GaAs(100) at a low temperature, 140 K, by $in$-$situ$ UHV x-ray reflectivity using synchrotron radiation. We find rough surface with the growth exponent, $beta_S$ = 0.51$pm$0.04. This indicates that the growth of the Fe film proceeds via the restrictive relaxation due to insufficient thermal diffusion of the adatoms. The XRR curves are nicely fit by a model with a uniform Fe film, implying that the surface segregation and interface alloying of both Ga and As are negligible. When the Fe film is annealed to 300 K, however, the corresponding XRR can be fit only after including an additional layer of 9 A thickness between the Fe film and the substrate, indicating the formation of ultrathin alloy near the interface. The confinement of the alloy near the interface derives from the fact that the diffusion of Ga and As from the substrate should proceed via the inefficient bulk diffusion, and hence the overlying Fe film is kinetically stabilized.
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We grow Fe film on (4 by 2)-GaAs(100) at low temperature, (~ 130 K) and study their chemical structure by photoelectron spectroscopy using synchrotron radiation. We observe the effective suppression of As segregation and remarkable reduction of alloy formation near the interface between Fe and substrate. Hence, this should be a way to grow virtually pristine Fe film on GaAs(100). Further, the Fe film is found stable against As segregation even after warmed up to room temperature. There only forms very thin, ~ 8 angstrom thick interface alloy. It is speculated that the interface alloy forms via surface diffusion mediated by interface defects formed during the low temperature growth of the Fe film. Further out-diffusion of both Ga and As are suppressed because it should then proceed via inefficient bulk diffusion.
The spin and orbital magnetic moments of the Fe3O4 epitaxial ultrathin film synthesized by plasma assisted simultaneous oxidization on MgO(100) have been studied with X-ray magnetic circular dichroism (XMCD). The ultrathin film retains a rather large total magnetic moment, i.e. (2.7+-0.15) uB/f.u., which is ~ 70% of that for the bulk-like Fe3O4. A significant unquenched orbital moment up to (0.54+-0.05) uB/f.u. was observed, which could come from the symmetry breaking at the Fe3O4/MgO interface. Such sizable orbital moment will add capacities to the Fe3O4-based spintronics devices in the magnetization reversal by the electric field.
Spin wave frequencies are observed in ultra-thin Fe/GaAs(100) films at temperatures where the spontaneous zero field magnetization is zero. The films exhibit good cyrstalline structure, and the effect of magnetic anisotropies is apparent even though no zero field spin wave energy gap exists. An analysis is given in terms of a superparamagnetic model in which the film is treated as a network of non-interacting single domain magnetic islands. A spin wave analysis provides a means to separate measured values of anisotropy parameters from products involving anisotropy and island volume. In this way, a measure of the activation volume associated with superparamagnetic islands is obtained for different Fe film thicknesses. Results suggest that the island lateral area increases with increasing film thickness.
Nanoscale Fe3O4 epitaxial thin film has been synthesized on MgO/GaAs(100) spintronic heterostructure, and studied with X-ray magnetic circular dichroism (XMCD). We have observed a total magnetic moment of (3.32 +- 0.1) uB/f.u., retaining 83% of the bulk value. Unquenched orbital moment of (0.47 +- 0.05) uB/f.u. has been confirmed by carefully applying the sum rule. The results offer direct experimental evidence of the bulk-like total magnetic moment and a large orbital moment in the nanoscale fully epitaxial Fe3O4/MgO/GaAs(100) heterostructure, which is significant for spintronics applications.
We present a detailed study of the interface morphology of an electro-deposited (ED) Ni/Cu bilayer film by using off-specular (diffuse) neutron reflectivity technique and Atomic Force Microscopy (AFM). The Ni/Cu bilayer has been electro-deposited on seed layers of Ti/Cu. These two seed layers were deposited by magnetron sputtering. The depth profile of density in the sample has been obtained from specular neutron reflectivity data. AFM image of the air-film interface shows that the surface is covered by globular islands of different sizes. The AFM height distribution of the surface clearly shows two peaks [Fig. 3] and the relief structure (islands) on the surface in the film can be treated as a quasi-two-level random rough surface structure. We have demonstrated that the detailed morphology of air-film interfaces, the quasi-two level surface structure as well as morphology of the buried interfaces can be obtained from off-specular neutron reflectivity data. We have shown from AFM and off-specular neutron reflectivity data that the morphologies of electro-deposited surface is distinctly different from that of sputter-deposited interface in this sample. To the best of our knowledge this is the first attempt to microscopically quantify the differences in morphologies of metallic interfaces deposited by two different techniques viz. electro-deposition and sputtering.
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