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Register a new userSpin and orbital moments of nanoscale Fe3O4 epitaxial thin film on MgO/GaAs(100)
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Nanoscale Fe3O4 epitaxial thin film has been synthesized on MgO/GaAs(100) spintronic heterostructure, and studied with X-ray magnetic circular dichroism (XMCD). We have observed a total magnetic moment of (3.32 +- 0.1) uB/f.u., retaining 83% of the bulk value. Unquenched orbital moment of (0.47 +- 0.05) uB/f.u. has been confirmed by carefully applying the sum rule. The results offer direct experimental evidence of the bulk-like total magnetic moment and a large orbital moment in the nanoscale fully epitaxial Fe3O4/MgO/GaAs(100) heterostructure, which is significant for spintronics applications.
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Magnetite thin fims have been grown epitaxially on ZnO and MgO substrates using molecular beam epitaxy. The film quality was found to be strongly dependent on the oxygen partial pressure during growth. Structural, electronic, and magnetic properties were analyzed utilizing Low Energy Electron Diffraction (LEED), HArd X-ray PhotoElectron Spectroscopy (HAXPES), Magneto Optical Kerr Effect (MOKE), and X-ray Magnetic Circular Dichroism (XMCD). Diffraction patterns show clear indication for growth in the (111) direction on ZnO. Vertical structure analysis by HAXPES depth profiling revealed uniform magnetite thin films on both type of substrates. Both, MOKE and XMCD measurements show in-plane easy magnetization with a reduced magnetic moment in case of the films on ZnO.
Nanoscale CoFeB amorphous films have been synthesized on GaAs(100) and studied with X-ray magnetic circular dichroism (XMCD) and transmission electron microscopy (TEM). We have found that the ratios of the orbital to spin magnetic moments of both the Co and Fe in the ultrathin amorphous film have been enhanced by more than 300% compared with those of the bulk crystalline Co and Fe, and in specifically, a large orbital moment of 0.56*10^-6 B from the Co atoms has been observed and at the same time the spin moment of the Co atoms remains comparable to that of the bulk hcp Co. The results indicate that the large uniaxial magnetic anisotropy (UMA) observed in the ultrathin CoFeB film on GaAs(100) is related to the enhanced spin-orbital coupling of the Co atoms in the CoFeB. This work offers experimental evidences of the correlation between the UMA and the elementary specific spin and orbital moments in the CoFeB amorphous film on the GaAs(100) substrate, which is significant for spintronics applications.
The spin and orbital magnetic moments of the Fe3O4 epitaxial ultrathin film synthesized by plasma assisted simultaneous oxidization on MgO(100) have been studied with X-ray magnetic circular dichroism (XMCD). The ultrathin film retains a rather large total magnetic moment, i.e. (2.7+-0.15) uB/f.u., which is ~ 70% of that for the bulk-like Fe3O4. A significant unquenched orbital moment up to (0.54+-0.05) uB/f.u. was observed, which could come from the symmetry breaking at the Fe3O4/MgO interface. Such sizable orbital moment will add capacities to the Fe3O4-based spintronics devices in the magnetization reversal by the electric field.
Temperature dependent magnetometry and transport measurements on epitaxial Fe3O4 films grown on BaTiO3(100) single crystals by molecular beam epitaxy show a series of discontinuities, that are due to changes in the magnetic anisotropy induced by strain in the different crystal phases of BaTiO3. The magnetite film is under tensile strain at room temperature, which is ascribed to the lattice expansion of BaTiO3 at the cubic to tetragonal transition, indicating that the magnetite film is relaxed at the growth temperature. From the magnetization versus temperature curves, the variation in the magnetic anisotropy is determined and compared with the magnetoelastic anisotropies. These results demonstrate the possibility of using the piezoelectric response of BaTiO3 to modulate the magnetic anisotropy of magnetite films.
We grow Fe film on (4 by 2)-GaAs(100) at low temperature, (~ 130 K) and study their chemical structure by photoelectron spectroscopy using synchrotron radiation. We observe the effective suppression of As segregation and remarkable reduction of alloy formation near the interface between Fe and substrate. Hence, this should be a way to grow virtually pristine Fe film on GaAs(100). Further, the Fe film is found stable against As segregation even after warmed up to room temperature. There only forms very thin, ~ 8 angstrom thick interface alloy. It is speculated that the interface alloy forms via surface diffusion mediated by interface defects formed during the low temperature growth of the Fe film. Further out-diffusion of both Ga and As are suppressed because it should then proceed via inefficient bulk diffusion.
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