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Register a new userDispersion of confined optical phonons in semiconductor nanowires in the framework of acontinuum approach
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Confined optical phonons are discussed for a semiconductor nanowire of the Ge (Si)prototype on the basis of a theory developed some years ago. In the present work this theory is adapted to a non polar material and generalized to the case when the phonon dispersion law involves both linear and quadratic terms in the wave vector. The treatment is considered along the lines of a continuous medium model and leads to a system of coupled differential equations describing oscillations of mixed nature. The nanowire is modelled in the form of an infinite circular cylinder and the solutions of the fundamental equations are found. We are thus led to a description of long wavelength optical phonons, which should show a closer agreement with experimental data and with calculations along atomistic models. The presented theory is applied to the calculation of optical phonons in a Ge nanowire. We have found the dispersion curves for various optical phonon modes. We also normalize the modes and discuss the electron-phonon interaction within the deformation potential approximation.
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Confined polar optical phonons are studied in a semiconductor double heterostructure (SDH) by means of a generalization of a theory developed some years ago and based on a continuous medium model. The treatment considers the coupling of electro-mechanical oscillations and involves dispersive phonons. This approach has provided results beyond the usually applied dielectric continuum models, where just the electric aspect of the oscillations is analyzed. In the previous works on the subject the theory included phonon dispersion within a quadratic (parabolic) approximation, while presently linear contributions were added by a straightforward extension of the fundamental equations. The generalized version of the mentioned theoretical treatment leads to a description of long wavelength polar optical phonons showing a closer agreement with experimental data and with calculations along atomistic models. This is particularly important for systems where the linear contribution to dispersion becomes predominant. We present a systematic derivation of the underlying equations, their solutions for the bulk and SDH cases, providing us a complete description of the dispersive modes and the associated electron-phonon Hamiltonian. The results obtained are applied to the case of a EuS/PbS/EuS quantum-well.
The evolution of the optical phonons in layered semiconductor alloys SnSe1-xSx is studied as a function of the composition by using polarized Raman spectroscopy with six different excitation wavelengths (784.8, 632.8, 532, 514.5, 488, and 441.6 nm). The polarization dependences of the phonon modes are compared with transmission electron diffraction measurements to determine the crystallographic orientation of the samples. Some of the Raman modes show significant variation in their polarization behavior depending on the excitation wavelengths. It is established that the maximum intensity direction of the Ag2 mode of SnSe1-xSx (0<=x<=1) does not depend on the excitation wavelength and corresponds to the armchair direction. It is additionally found that the lower-frequency Raman modes of Ag1, Ag2 and B3g1 in the alloys show the typical one-mode behavior of optical phonons, whereas the higher-frequency modes of B3g2, Ag3 and Ag4 show two-mode behavior.
In the framework of four-band envelope-function formalism, developed earlier for spherical semiconductor nanocrystals, we study the electronic structure and optical properties of quantum-confined lead-salt (PbSe and PbS) nanowires (NWs) with a strong coupling between the conduction and the valence bands. We derive spatial quantization equations, and calculate numerically energy levels of spatially quantized states of a transverse electron motion in the plane perpendicular to the NW axis, and electronic subbands developed due to a free longitudinal motion along the NW axis. Using explicit expressions for eigenfunctions of the electronic states, we also derive analytical expressions for matrix elements of optical transitions and study selection rules for interband absorption. Next we study a two-particle problem with a conventional long-range Coulomb interaction and an interparticle coupling via medium polarization. The obtained results show that due to a large magnitude of the high-frequency dielectric permittivity of PbSe material, and hence, a high dielectric NW/vacuum contrast, the effective coupling via medium polarization significantly exceeds the effective direct Coulomb coupling at all interparticle separations along the NW axis. Furthermore, the strong coupling via medium polarization results in a bound state of the longitudinal motion of the lowest-energy electron-hole pair (a longitudinal exciton), while fast transverse motions of charge carriers remain independent of each other.
Controlling the properties of semiconductor/metal interfaces is a powerful method for designing functionality and improving the performance of electrical devices. Recently semiconductor/superconductor hybrids have appeared as an important example where the atomic scale uniformity of the interface plays a key role for the quality of the induced superconducting gap. Here we present epitaxial growth of semiconductor-metal core-shell nanowires by molecular beam epitaxy, a method that provides a conceptually new route to controlled electrical contacting of nanostructures and for designing devices for specialized applications such as topological and gate-controlled superconducting electronics. Our materials of choice, InAs/Al, are grown with epitaxially matched single plane interfaces, and alternative semiconductor/metal combinations allowing epitaxial interface matching in nanowires are discussed. We formulate the grain growth kinetics of the metal phase in general terms of continuum parameters and bicrystal symmetries. The method realizes the ultimate limit of uniform interfaces and appears to solve the soft-gap problem in superconducting hybrid structures.
Surface confined dehalogenation reactions are versatile bottom-up approaches for the synthesis of carbon-based nanostructures with predefined chemical properties. However, for devices generally requiring low conductivity substrates, potential applications are so far severely hampered by the necessity of a metallic surface to catalyze the reactions. In this work we report the synthesis of ordered arrays of poly(p-phenylene) chains on the surface of semiconducting TiO2(110) via a dehalogenative homocoupling of 4,4-dibromoterphenyl precursors. The supramolecular phase is clearly distinguished from the polymeric one using low energy electron diffraction and scanning tunneling microscopy as the substrate temperature used for deposition is varied. X ray photoelectron spectroscopy of C 1s and Br 3d core levels traces the temperature of the onset of dehalogenation to around 475 K. Moreover, angle-resolved photoemission spectroscopy and tight-binding calculations identify a highly dispersive band characteristic of a substantial overlap between the precursors {pi} states along the polymer, considered as the fingerprint of a successful polymerization. Thus, these results establish the first spectroscopic evidence that atomically precise carbon based nanostructures can readily be synthesized on top of a transition-metal oxide surface, opening the prospect for the bottom-up production of novel molecule-semiconductor devices.
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