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Register a new userQuadratic response theory for spin-orbit coupling in semiconductor heterostructures
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Bradley A. Foreman
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This paper examines the properties of the self-energy operator in lattice-matched semiconductor heterostructures, focusing on nonanalytic behavior at small values of the crystal momentum, which gives rise to long-range Coulomb potentials. A nonlinear response theory is developed for nonlocal spin-dependent perturbing potentials. The ionic pseudopotential of the heterostructure is treated as a perturbation of a bulk reference crystal, and the self-energy is derived to second order in the perturbation. If spin-orbit coupling is neglected outside the atomic cores, the problem can be analyzed as if the perturbation were a local spin scalar, since the nonlocal spin-dependent part of the pseudopotential merely renormalizes the results obtained from a local perturbation. The spin-dependent terms in the self-energy therefore fall into two classes: short-range potentials that are analytic in momentum space, and long-range nonanalytic terms that arise from the screened Coulomb potential multiplied by a spin-dependent vertex function. For an insulator at zero temperature, it is shown that the electronic charge induced by a given perturbation is exactly linearly proportional to the charge of the perturbing potential. These results are used in a subsequent paper to develop a first-principles effective-mass theory with generalized Rashba spin-orbit coupling.
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We present Maxwell equations with source terms for the electromagnetic field interacting with a moving electron in a spin-orbit coupled semiconductor heterostructure. We start with the eight--band ${bm k}{bm p}$ model and derive the electric and magnetic polarization vectors using the Gordon--like decomposition method. Next, we present the ${bm k}{bm p}$ effective Lagrangian for the nonparabolic conduction band electrons interacting with electromagnetic field in semiconductor heterostructures with abrupt interfaces. This Lagrangian gives rise to the Maxwell equations with source terms and boundary conditions at heterointerfaces as well as equations for the electron envelope wave function in the external electromagnetic field together with appropriate boundary conditions. As an example, we consider spin--orbit effects caused by the structure inversion asymmetry for the conduction electron states. We compute the intrinsic contribution to the electric polarization of the steady state electron gas in asymmetric quantum well in equilibrium and in the spin Hall regime. We argue that this contribution, as well as the intrinsic spin Hall current, are not cancelled by the elastic scattering processes.
Quadratic-response theory is shown to provide a conceptually simple but accurate approximation for the self-consistent one-electron potential of semiconductor nanostructures. Numerical examples are presented for GaAs/AlAs and InGaAs/InP (001) superlattices using the local-density approximation to density-functional theory and norm-conserving pseudopotentials without spin-orbit coupling. When the reference crystal is chosen to be the virtual-crystal average of the two bulk constituents, the absolute error in the quadratic-response potential for Gamma(15) valence electrons is about 2 meV for GaAs/AlAs and 5 meV for InGaAs/InP. Low-order multipole expansions of the electron density and potential response are shown to be accurate throughout a small neighborhood of each reciprocal lattice vector, thus providing a further simplification that is confirmed to be valid for slowly varying envelope functions. Although the linear response is about an order of magnitude larger than the quadratic response, the quadratic terms are important both quantitatively (if an accuracy of better than a few tens of meV is desired) and qualitatively (due to their different symmetry and long-range dipole effects).
We investigate the effects of spin-orbit coupling on the optical response of materials. In particular, we study the effects of the commutator between the spin-orbit coupling part of the potential and the position operator on the optical matrix elements. Using a formalism that separates a fullyrelativistic Kleinman-Bylander pseudopotential into the scalar-relativistic and spin-orbit-coupling parts, we calculate the contribution of the commutator arising from spin-orbit coupling to the squared optical matrix elements of isolated atoms, monolayer transition metal dichalcogenides, and topological insulators. In the case of isolated atoms from H ($Z = 1$) to Bi ($Z = 83$), the contribution of spin-orbit coupling to the squared matrix elements can be as large as 14 %. On the other hand, in the cases of monolayer transition metal dichalcogenides and topological insulators, we find that this contribution is less than 1 % and that it is sufficient to calculate the optical matrix elements and subsequent physical quantities without considering the commutator arising from spin-orbit coupling.
In this paper a multi-band envelope-function Hamiltonian for lattice-matched semiconductor heterostructures is derived from first-principles norm-conserving pseudopotentials. The theory is applicable to isovalent or heterovalent heterostructures with macroscopically neutral interfaces and no spontaneous bulk polarization. The key assumption -- proved in earlier numerical studies -- is that the heterostructure can be treated as a weak perturbation with respect to some periodic reference crystal, with the nonlinear response small in comparison to the linear response. Quadratic response theory is then used in conjunction with k.p perturbation theory to develop a multi-band effective-mass Hamiltonian (for slowly varying envelope functions) in which all interface band-mixing effects are determined by the linear response. To within terms of the same order as the position dependence of the effective mass, the quadratic response contributes only a bulk band offset term and an interface dipole term, both of which are diagonal in the effective-mass Hamiltonian. Long-range multipole Coulomb fields arise in quantum wires or dots, but have no qualitative effect in two-dimensional systems beyond a dipole contribution to the band offsets.
Spin-orbit coupling (SOC) is essential in understanding the properties of 5d transition metal compounds, whose SOC value is large and almost comparable to other key parameters. Over the past few years, there have been numerous studies on the SOC-driven effects of the electronic bands, magnetism, and spin-orbit entanglement for those materials with a large SOC. However, it is less studied and remains an unsolved problem in how the SOC affects the lattice dynamics. We, therefore, measured the phonon spectra of 5d pyrochlore Cd2Os2O7 over the full Brillouin zone to address the question by using inelastic x-ray scattering (IXS). Our main finding is a visible mode-dependence in the phonon spectra, measured across the metal-insulator transition at 227 K. We examined the SOC strength dependence of the lattice dynamics and its spin-phonon (SP) coupling, with first-principle calculations. Our experimental data taken at 100 K are in good agreement with the theoretical results obtained with the optimized U = 2.0 eV with SOC. By scaling the SOC strength and the U value in the DFT calculations, we demonstrate that SOC is more relevant than U to explaining the observed mode-dependent phonon energy shifts with temperature. Furthermore, the temperature dependence of the phonon energy can be effectively described by scaling SOC. Our work provides clear evidence of SOC producing a non-negligible and essential effect on the lattice dynamics of Cd2Os2O7 and its SP coupling.
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