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Register a new userLarge magnetoresistance in $pi$-conjugated semiconductor thin film devices
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Following the recent discovery of large magnetoresistance at room temperature in polyfluorence sandwich devices, we have performed a comprehensive magnetoresistance study on a set of organic semiconductor sandwich devices made from different pi-conjugated polymers and small molecules. The measurements were performed at different temperatures, ranging from 10K to 300K, and at magnetic fields, $B < 100mT$. We observed large negative or positive magnetoresistance (up to 10% at 300K and 10mT) depending on material and device operating conditions. We compare the results obtained in devices made from different materials with the goal of providing a comprehensive picture of the experimental data. We discuss our results in the framework of known magnetoresistance mechanisms and find that none of the existing models can explain our results.
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A magnetic spin filter tunnel barrier, sandwiched between a non-magnetic metal and a magnetic metal, is used to create a new magnetoresistive tunnel device, somewhat analogous to an optical polarizer-analyzer configuration. The resistance of these trilayer structures depends on the relative magnetization orientation of the spin filter and the ferromagnetic electrode. The spin filtering in this configuration yields a previously unobserved magnetoresistance effect, exceeding 100%.
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We report on the discovery of a large, room temperature magnetoresistance (MR) effect in polyfluorene sandwich devices in weak magnetic fields. We characterize this effect and discuss its dependence on voltage, temperature, film thickness, electrode materials, and (unintentional) impurity concentration. We usually observed negative MR, but positive MR can also be achieved under high applied electric fields. The MR effect reaches up to 10% at fields of 10mT at room temperature. The effect shows only a weak temperature dependence and is independent of the sign and direction of the magnetic field. We find that the effect is related to the hole current in the devices.
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We present an extensive study of a large, room temperature negative magnetoresistance (MR) effect in tris-(8-hydroxyquinoline) aluminum sandwich devices in weak magnetic fields. The effect is similar to that previously discovered in polymer devices. We characterize this effect and discuss its dependence on field direction, voltage, temperature, film thickness, and electrode materials. The MR effect reaches almost 10% at fields of approximately 10 mT at room temperature. The effect shows only a weak temperature dependence and is independent of the sign and direction of the magnetic field. Measuring the devices current-voltage characteristics, we find that the current depends on the voltage through a power-law. We find that the magnetic field changes the prefactor of the power-law, whereas the exponent remains unaffected. We also studied the effect of the magnetic field on the electroluminescence (MEL) of the devices and analyze the relationship between MR and MEL. We find that the largest part of MEL is simply a consequence of a change in device current caused by the MR effect.
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