Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userSpin-dependent resistivity at transitions between integer quantum Hall states
80
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
The longitudinal resistivity at transitions between integer quantum Hall states in two-dimensional electrons confined to AlAs quantum wells is found to depend on the spin orientation of the partially-filled Landau level in which the Fermi energy resides. The resistivity can be enhanced by an order of magnitude as the spin orientation of this energy level is aligned with the majority spin. We discuss possible causes and suggest a new explanation for spike-like features observed at the edges of quantum Hall minima near Landau level crossings.
rate research
Read More
We investigate the origin of the resistance fluctuations of mesoscopic samples, near transitions between Quantum Hall plateaus. These fluctuations have been recently observed experimentally by E. Peled et al. [Phys. Rev. Lett. 90, 246802 (2003); ibid 90, 236802 (2003); Phys. Rev. B 69, R241305 (2004)]. We perform realistic first-principles simulations using a six-terminal geometry and sample sizes similar to those of real devices, to model the actual experiment. We present the theory and implementation of these simulations, which are based on the linear response theory for non-interacting electrons. The Hall and longitudinal resistances extracted from the Landauer formula exhibit all the observed experimental features. We give a unified explanation for the three regimes with distinct types of fluctuations observed experimentally, based on a simple generalization of the Landauer-Buttiker model. The transport is shown to be determined by the interplay between tunneling and chiral currents. We identify the central part of the transition, at intermediate filling factors, as the critical region where the localization length is larger than the sample size.
The status of the ac quantum Hall effect is reviewed with emphasis on the theoretical development in recent years. In particular, the numerical approaches for the calculation of the frequency dependent Hall and longitudinal conductivities of non-interacting electrons are considered in detail. Results for the frequency scaling at the critical point and for the frequency dependent deviation of the Hall conductivity from the quantised plateau value are presented.
Indium Arsenide (InAs) near surface quantum wells (QWs) are ideal for the fabrication of semiconductor-superconductor heterostructures given that they allow for a strong hybridization between the two-dimensional states in the quantum well and the ones in the superconductor. In this work we present results for InAs QWs in the quantum Hall regime placed in proximity of superconducting NbTiN. We observe a negative downstream resistance with a corresponding reduction of Hall (upstream) resistance. We analyze the experimental data using the Landauer-B{u}ttiker formalism, generalized to allow for Andreev reflection processes. Our analysis is consistent with a lower-bound for the averaged Andreev conversion of about 15%. We attribute the high efficiency of Andreev conversion in our devices to the large transparency of the InAs/NbTiN interface and the consequent strong hybridization of the QH edge modes with the states in the superconductor.
In this review the physics of Pfaffian paired states, in the context of fractional quantum Hall effect, is discussed using field-theoretical approaches. The Pfaffian states are prime examples of topological ($p$-wave) Cooper pairing and are characterized by non-Abelian statistics of their quasiparticles. Here we focus on conditions for their realization and competition among them at half-integer filling factors. Using the Dirac composite fermion description, in the presence of a mass term, we study the influence of Landau level mixing in selecting a particular Pfaffian state. While Pfaffian and anti-Pfaffian are selected when Landau level mixing is not strong, and can be taken into account perturbatively, the PH Pfaffian state requires non-perturbative inclusion of at least two Landau levels. Our findings, for small Landau level mixing, are in accordance with numerical investigations in the literature, and call for a non-perturbative approach in the search for PH Pfaffian correlations. We demonstrated that a method based on the Chern-Simons field-theoretical approach can be used to generate characteristic interaction pseudo-potentials for Pfaffian paired states.
We fabricate high-mobility p-type few-layer WSe2 field-effect transistors and surprisingly observe a series of quantum Hall (QH) states following an unconventional sequence predominated by odd-integer states under a moderate strength magnetic field. By tilting the magnetic field, we discover Landau level (LL) crossing effects at ultra-low coincident angles, revealing that the Zeeman energy is about three times as large as the cyclotron energy near the valence band top at {Gamma} valley. This result implies the significant roles played by the exchange interactions in p-type few-layer WSe2, in which itinerant or QH ferromagnetism likely occurs. Evidently, the {Gamma} valley of few-layer WSe2 offers a unique platform with unusually heavy hole-carriers and a substantially enhanced g-factor for exploring strongly correlated phenomena.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
