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Register a new userLow-temperature, in situ tunable, uniaxial stress measurements in semiconductors using a piezoelectric actuator
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Added by
Yakov P. Shkolnikov
Publication date
2004
fields
Physics
and research's language is
English
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We demonstrate the use of a piezoelectric actuator to apply, at low temperatures, uniaxial stress in the plane of a two-dimensional electron system confined to a modulation-doped AlAs quantum well. Via the application of stress, which can be tuned in situ and continuously, we control the energies and occupations of the conduction-band minima and the electronic properties of the electron system. We also report measurements of the longitudinal and transverse strain versus bias for the actuator at 300, 77, and 4.2 K. A pronounced hysteresis is observed at 300 and 77 K, while at 4.2 K, strain is nearly linear and shows very little hysteresis with the applied bias.
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We report direct experimental evidence that the insulating phase of a disordered, yet strongly interacting two-dimensional electron system (2DES) becomes unstable at low temperatures. As the temperature decreases, a transition from insulating to metal-like transport behaviour is observed, which persists even when the resistivity of the system greatly exceeds the quantum of resistivity h/e^2. The results have been achieved by measuring transport on a mesoscopic length-scale while systematically varying the strength of disorder.
We have performed electrical resistivity measurements on single crystal BaFe2As2 under high pressure P up to 16 GPa with a cubic anvil apparatus, and up to 3 GPa with a modified Bridgman anvil cell. The samples were obtained from the same batch, which was grown with a self-flux method. A cubic anvil apparatus provides highly hydrostatic pressure, and a modified Bridgman anvil cell, which contains liquid pressure transmitting medium, provides quasi hydrostatic pressure. For highly hydrostatic pressure, the crystal phase and magnetic transition temperature decreases robustly with P and disappears at around 10 GPa. The superconducting phase appears adjacent to magnetic phase in narrow pressure region between 11 and 14 GPa. The tiny difference of hydrostaticity between the cubic anvil apparatus and modified Bridgman anvil cell induces a drastic effect on the phase diagram of BaFe2As2. This result indicates that small uniaxial stress along c-axis strongly suppresses the structural/antiferromagnetic ordering and stabilizes superconductivity at much lower pressure.
We present piezoresistance measurements in modulation doped AlAs quantum wells where the two-dimensional electron system occupies two conduction band valleys with elliptical Fermi contours. Our data demonstrate that, at low temperatures, the strain gauge factor (the fractional change in resistance divided by the samples fractional length change) in this system exceeds 10,000. Moreover, in the presence of a moderate magnetic field perpendicular to the plane of the two-dimensional system, gauge factors up to 56,000 can be achieved. The piezoresistance data can be explained qualitatively by a simple model that takes into account intervalley charge transfer.
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