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Register a new userTemperature and Magnetic Field Enhanced Hall Slope of a Dilute 2D Hole System in the Ballistic Regime
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We report the temperature($T$) and perpendicular magnetic field($B$) dependence of the Hall resistivity $rho_{xy}(B)$ of dilute metallic two-dimensional(2D) holes in GaAs over a broad range of temperature(0.02-1.25K). The low $B$ Hall coefficient, $R_H$, is found to be enhanced when $T$ decreases. Strong magnetic fields further enhance the slope of $rho_{xy}(B)$ at all temperatures studied. Coulomb interaction corrections of a Fermi liquid(FL) in the ballistic regime can not explain the enhancement of $rho_{xy}$ which occurs in the same regime as the anomalous metallic longitudinal conductivity. In particular, although the metallic conductivity in 2D systems has been attributed to electron interactions in a FL, these same interactions should reduce, {it not enhance} the slope of $rho_{xy}(B)$ as $T$ decreases and/or $B$ increases.
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A new reentrant insulating phase (RIP) in low magnetic fields has been reported in the literature in strongly interacting 2D carrier systems and was suggested to be related to the formation of a Wigner crystal [e.g. Qiu et al, PRL 108, 106404 (2012)]. We have studied the transformation between the metallic liquid phase and the low field RIP in a dilute 2D hole system with large interaction parameter $r_s$ (~20-30) in GaAs quantum wells. Instead of a sharp transition, increasing density (or lowering $r_s$) drives the RIP into a state where an incipient RIP coexists with the metallic 2D hole liquid. The non-trivial temperature dependent resistivity and the in-plane magnetic field induced enhancement of the RIP highlight the competition between two phases and the essential role of spin in this mixture phase, and are consistent with the Pomeranchuk effect in a mixture of Wigner crystal and Fermi liquid.
We have measured the resistance noise of a two-dimensional (2D)hole system in a high mobility GaAs quantum well, around the 2D metal-insulator transition (MIT) at zero magnetic field. The normalized noise power $S_R/R^2$ increases strongly when the hole density p_s is decreased, increases slightly with temperature (T) at the largest densities, and decreases strongly with T at low p_s. The noise scales with the resistance, $S_R/R^2 sim R^{2.4}$, as for a second order phase transition such as a percolation transition. The p_s dependence of the conductivity is consistent with a critical behavior for such a transition, near a density p* which is lower than the observed MIT critical density p_c.
Fermi liquid theory has been a foundation in understanding the electronic properties of materials. For weakly interacting two-dimensional (2D) electron or hole systems, electron-electron interactions are known to introduce quantum corrections to the Drude conductivity in the FL theory, giving rise to temperature dependent conductivity and magneto-resistance. Here we study the magneto-transport in a strongly interacting 2D hole system over a broad range of temperatures ($T$ = 0.09 to $>$1K) and densities $p=1.98-0.99times10^{10}$ cm$^{-2}$ where the ratio between Coulomb energy and Fermi energy $r_s$ = 20 - 30. We show that while the system exhibits a negative parabolic magneto-resistance at low temperatures ($lesssim$ 0.4K) characteristic of an interacting FL, the FL interaction corrections represent an insignificant fraction of the total conductivity. Surprisingly, a positive magneto-resistance emerges at high temperatures and grows with increasing temperature even in the regime $T sim E_F$, close to the Fermi temperature. This unusual positive magneto-resistance at high temperatures is attributed to the collective viscous transport of 2D hole fluid in the hydrodynamic regime where holes scatter frequently with each other. These findings highlight the collective transport in a strongly interacting 2D system in the $r_sgg 1$ regime and the hydrodynamic transport induced magneto-resistance opens up possibilities to new routes of magneto-resistance at high temperatures.
The melting temperature ($T_m$) of a solid is generally determined by the pressure applied to it, or indirectly by its density ($n$) through the equation of state. This remains true even for helium solidscite{wilk:67}, where quantum effects often lead to unusual propertiescite{ekim:04}. In this letter we present experimental evidence to show that for a two dimensional (2D) solid formed by electrons in a semiconductor sample under a strong perpendicular magnetic fieldcite{shay:97} ($B$), the $T_m$ is not controlled by $n$, but effectively by the textit{quantum correlation} between the electrons through the Landau level filling factor $ u$=$nh/eB$. Such melting behavior, different from that of all other known solids (including a classical 2D electron solid at zero magnetic fieldcite{grim:79}), attests to the quantum nature of the magnetic field induced electron solid. Moreover, we found the $T_m$ to increase with the strength of the sample-dependent disorder that pins the electron solid.
We study the bilayer quantum Hall system at total filling factor u_T = 1 within a bosonization formalism which allows us to approximately treat the magnetic exciton as a boson. We show that in the region where the distance between the two layers is comparable to the magnetic length, the ground state of the system can be seen as a finite-momentum condensate of magnetic excitons provided that the excitation spectrum is gapped. We analyze the stability of such a phase within the Bogoliubov approximation firstly assuming that only one momentum Q0 is macroscopically occupied and later we consider the same situation for two modes pm Q0. We find strong evidences that a first-order quantum phase transition at small interlayer separation takes place from a zero-momentum condensate phase, which corresponds to Halperin 111 state, to a finite-momentum condensate of magnetic excitons.
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