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Incipient Formation of the Reentrant Insulating Phase in a Dilute 2D Hole System with Strong Interactions

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 Added by Xuan Gao
 Publication date 2020
  fields Physics
and research's language is English




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A new reentrant insulating phase (RIP) in low magnetic fields has been reported in the literature in strongly interacting 2D carrier systems and was suggested to be related to the formation of a Wigner crystal [e.g. Qiu et al, PRL 108, 106404 (2012)]. We have studied the transformation between the metallic liquid phase and the low field RIP in a dilute 2D hole system with large interaction parameter $r_s$ (~20-30) in GaAs quantum wells. Instead of a sharp transition, increasing density (or lowering $r_s$) drives the RIP into a state where an incipient RIP coexists with the metallic 2D hole liquid. The non-trivial temperature dependent resistivity and the in-plane magnetic field induced enhancement of the RIP highlight the competition between two phases and the essential role of spin in this mixture phase, and are consistent with the Pomeranchuk effect in a mixture of Wigner crystal and Fermi liquid.



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We report the temperature($T$) and perpendicular magnetic field($B$) dependence of the Hall resistivity $rho_{xy}(B)$ of dilute metallic two-dimensional(2D) holes in GaAs over a broad range of temperature(0.02-1.25K). The low $B$ Hall coefficient, $R_H$, is found to be enhanced when $T$ decreases. Strong magnetic fields further enhance the slope of $rho_{xy}(B)$ at all temperatures studied. Coulomb interaction corrections of a Fermi liquid(FL) in the ballistic regime can not explain the enhancement of $rho_{xy}$ which occurs in the same regime as the anomalous metallic longitudinal conductivity. In particular, although the metallic conductivity in 2D systems has been attributed to electron interactions in a FL, these same interactions should reduce, {it not enhance} the slope of $rho_{xy}(B)$ as $T$ decreases and/or $B$ increases.
We have measured the resistance noise of a two-dimensional (2D)hole system in a high mobility GaAs quantum well, around the 2D metal-insulator transition (MIT) at zero magnetic field. The normalized noise power $S_R/R^2$ increases strongly when the hole density p_s is decreased, increases slightly with temperature (T) at the largest densities, and decreases strongly with T at low p_s. The noise scales with the resistance, $S_R/R^2 sim R^{2.4}$, as for a second order phase transition such as a percolation transition. The p_s dependence of the conductivity is consistent with a critical behavior for such a transition, near a density p* which is lower than the observed MIT critical density p_c.
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