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Register a new userMagnetoresistance of p-GaAs/AlGaAs structures in the vicinity of metal-insulator transition: Effect of superconducting leads
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Experimental and theoretical studies on transport in semiconductor samples with superconducting electrodes are reported. We focus on the samples close to metal-insulator transition. In metallic samples, a peak of negative magnetoresistance at fields lower than critical magnetic field of the leads was observed. This peak is attributed to restoration of a single-particle tunneling emerging with suppression of superconductivity. The experimental results allow us to estimate tunneling transparency of the boundary between superconductor and metal. In contrast, for the insulating samples no such a peak was observed. We explain this behavior as related to properties of transport through the contact between superconductor and hopping conductor. This effect can be used to discriminate between weak localization and strong localization regimes.
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We observed slow relaxation of magnetoresistance in quantum well structures GaAs-AlGaAs with a selective doping of both wells and barrier regions which allowed partial filling of the upper Hubbard band. Such a behavior is explained as related to magnetic-field driven redistribution of the carriers between sites with different occupation numbers due to spin correlation on the doubly occupied centers. This redistribution, in its turn, leads to slow multi-particle relaxations in the Coulomb glass formed by the charged centers.
In highly doped uncompensated p-type layers within the central part of GaAs/AlGaAs quantum wells at low temperatures we observed an activated behavior of the conductivity with low activation energies (1-3) meV which can not be ascribed to standard mechanisms. We attribute this behavior to the delocalization of hole states near the maximum of the narrow impurity band in the sense of the Anderson transition. Low temperature conduction $epsilon_4$ is supported by an activation of minority carriers - electrons (resulting from a weak compensation by back-ground defects) - from the Fermi level to the band of delocalized states mentioned above. The corresponding behavior can be specified as virtual Anderson transition. Low temperature transport ($<4$ K) exhibits also strong nonlinearity of a breakdown type characterized in particular by S-shaped I-V curve. The nonlinearity is observed in unexpectedly low fields ($<10$ V/cm). Such a behavior can be explained by a simple model implying an impact ionization of the localized states of the minority carriers mentioned above to the band of Anderson-delocalized states.
We report a simulation of the metal-insulator transition in a model of a doped semiconductor that treats disorder and interactions on an equal footing. The model is analyzed using density functional theory. From a multi-fractal analysis of the Kohn-Sham eigenfunctions, we find $ u approx 1.3$ for the critical exponent of the correlation length. This differs from that of Andersons model of localization and suggests that the Coulomb interaction changes the universality class of the transition.
We observed a slow relaxation of magnetoresistance in response to applied magnetic field in selectively doped p-GaAs-AlGaAs structures with partially filled upper Hubbard band. We have paid a special attention to exclude the effects related to temperature fluctuations. Though this effect is important, we have found that the general features of slow relaxation still persist. This behavior is interpreted as related to the properties of the Coulomb glass formed by charged centers with account of spin correlations, which are sensitive to an external magnetic field. Variation of the magnetic field changes numbers of impurity complexes of different types. As a result, it effects the shape and depth of the polaron gap formed at the states belonging to the percolation cluster responsible for the conductance. The suggested model explains both the qualitative behavior and the order of magnitude of the slowly relaxing magnetoresistance.
A metal near the topological transition can be loosely viewed as consisting of two groups of electrons. First group are bulk electrons occupying most of the Brillouin zone. Second group are electrons with wave vectors close to the topological transition point. Kinetic energy, $tilde{E}_F$, of electrons of the first group is much bigger than kinetic energy, $E_F$, of electrons of the second group. With electrons of the second group being slow, the interaction effects are more pronounced for these electrons. We perform a calculation illustrating that electrons of the second group are responsible for inelastic lifetime making it anomalously short, so that the concept of quasiparticles applies to these electrons only marginally. We also demonstrate that interactions renormalize the spectrum of electrons in the vicinity of topological transition, the parameters of renormalized spectrum being strongly dependent on the proximity to the transition. Another many-body effect that evolves dramatically as the Fermi level is swept through the transition is the Friedel oscillations of the electron density created by electrons of the second group around an impurity. These oscillations are strongly anisotropic with a period depending on the direction. Scattering of electrons off these oscillations give rise to a temperature-dependent ballistic correction to the conductivity.
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