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Register a new userEvidence of the virtual Anderson transition in a narrow impurity band of p-GaAs/AlGaAs quantum wells: $epsilon_4$ conductivity and electric breakdown at low temperatures
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In highly doped uncompensated p-type layers within the central part of GaAs/AlGaAs quantum wells at low temperatures we observed an activated behavior of the conductivity with low activation energies (1-3) meV which can not be ascribed to standard mechanisms. We attribute this behavior to the delocalization of hole states near the maximum of the narrow impurity band in the sense of the Anderson transition. Low temperature conduction $epsilon_4$ is supported by an activation of minority carriers - electrons (resulting from a weak compensation by back-ground defects) - from the Fermi level to the band of delocalized states mentioned above. The corresponding behavior can be specified as virtual Anderson transition. Low temperature transport ($<4$ K) exhibits also strong nonlinearity of a breakdown type characterized in particular by S-shaped I-V curve. The nonlinearity is observed in unexpectedly low fields ($<10$ V/cm). Such a behavior can be explained by a simple model implying an impact ionization of the localized states of the minority carriers mentioned above to the band of Anderson-delocalized states.
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Earlier we reported an observation at low temperatures of activation conductivity with small activation energies in strongly doped uncompensated layers of p-GaAs/AlGaAs quantum wells. We attributed it to Anderson delocalization of electronic states in the vicinity of the maximum of the narrow impurity band. A possibility of such delocalization at relatively small impurity concentration is related to the small width of the impurity band characterized by weak disorder. In this case the carriers were activated from the bandtail while its presence was related to weak background compensation. Here we study an effect of the extrinsic compensation and of the impurity concentration on this virtual Anderson transition. It was shown that an increase of compensation initially does not affect the Anderson transition, however at strong compensations the transition is suppressed due to increase of disorder. In its turn, an increase of the dopant concentration initially leads to a suppression of the transition due an increase of disorder, the latter resulting from a partial overlap of the Hubbard bands. However at larger concentration the conductivity becomes to be metallic due to Mott transition.
The dielectric anomalies of window-type glasses at low temperatures ($T<$ 1 K) are rather successfully explained by the two-level systems (2LS) tunneling model (TM). However, the magnetic effects discovered in the multisilicate glasses in recent times cite{ref1}-cite{ref3}, and also some older data from mixed (SiO$_2$)$_{1-x}$(K$_2$O)$_x$ and (SiO$_2$)$_{1-x}$(Na$_2$O)$_x$ glasses cite{ref4}, indicate the need for a suitable generalization of the 2LS TM. We show that, not only for the magnetic effects cite{ref3,ref5} but also for the mixed glasses in the absence of a field, the right extension of the 2LS TM is provided by the (anomalous) multilevel tunneling systems approach proposed by one of us. It appears that new 2LS develop via dilution near the hull of the SiO$_4$-percolating clusters in the mixed glasses.
By selective doping (Be) of the well and barrier regions of p-GaAs/AlGaAs structures we have realized the situation where the upper Hubbard band (A+ centers) has been occupied by holes in the equilibrium. We studied temperature behavior of the Hall effect, variable range hopping conductivity and the photoluminescence spectra of the corresponding structures. The experimental data demonstrated that the binding energy of the A+ states significantly increases with respect to 3D case and strongly depends on well width (9nm,15nm). The localization radii of the A+ states are of the order of well widths.
Orientational glasses with CO molecules occupying 26% and 90% of the octahedral interstitial sites in the C60 lattice have been investigated by the dilatometric method in a temperature interval of 2.5 - 23 K. At temperatures 4 - 6 K the glasses undergo a first-order phase transition which is evident from the hysteresis of the thermal expansion and the maxima in the temperature dependences of the linear thermal expansion coefficients, and the thermalization times of the samples. The effect of the noncentral CO-C60 interaction upon the thermal expansion and the phase transition in these glasses was clarified by comparing the behavior of the properties of the CO-C60 and N2-C60 solutions.
We observed slow relaxation of magnetoresistance in quantum well structures GaAs-AlGaAs with a selective doping of both wells and barrier regions which allowed partial filling of the upper Hubbard band. Such a behavior is explained as related to magnetic-field driven redistribution of the carriers between sites with different occupation numbers due to spin correlation on the doubly occupied centers. This redistribution, in its turn, leads to slow multi-particle relaxations in the Coulomb glass formed by the charged centers.
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