Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userSpin relaxation times of 2D holes from spin sensitive bleaching of inter-subband absorption
45
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
We present spin relaxation times of 2D holes obtained by means of spin sensitive bleaching of the absorption of infrared radiation in p-type GaAs/AlGaAs quantum wells (QWs). It is shown that the saturation of inter-subband absorption of circularly polarized radiation is mainly controlled by the spin relaxation time of the holes. The saturation behavior has been determined for different QW widths and in a wide temperature range with the result that the saturation intensity substantially decreases with narrowing of the QWs. Spin relaxation times are derived from the measured saturation intensities by making use of calculated (linear) absorption coefficients for direct inter-subband transitions. It is shown that spin relaxation is due to the Dyakonov-Perel mechanism governed by hole-hole scattering. The problem of selection rules is addressed.
rate research
Read More
Spin-spin relaxation time ($T_2$) and magnetic susceptibility ($chi$) of the second layer $^3$He adsorbed on Grafoil, exfoliated graphite, preplated with a monolayer $^4$He are studied by pulsed-NMR in a density range of $0.68 leq rho leq 5.28$ nm$^{-2}$. The temperature dependence of $chi(T)$ and $chi(T = 0)$ show Fermi fluid behaviour and no evidence of self-condensation are found even at the lowest density $rho = 0.68$ nm$^{-2}$. Density dependence of $T_2$ at $f = 5.5$ MHz shows a broad maximum of 5.7 ms around $rho = 3$ nm$^{-2}$. Since the decrease of $T_2$ in dilute side can not be expected in the ideal 2D fluid, it can be understood as the relaxation caused by a small amount of solid $^3$He at heterogeneity of the substrate. We also measured the Larmor frequency dependence of $T_2$ at $rho = 5.28$ nm$^{-2}$. $1/T_2$ has a $f$-linear dependence similarly to the earlier study on a first layer solid $^3$He. From a comparison between our result and the earlier one, this linearity is almost independent of the particle motion. Now, it could be caused by a microscopic magnetic field inhomogeneity arisen from the mosaic angle spread and diamagnetism of the graphite substrate.
We present an approach to spin dynamics by extending the optical Bloch equations for the driven two-level system to derive microscopic expressions for the transverse and longitudinal spin relaxation times. This is done for the 6-level system of electron and hole subband states in a semiconductor or a semiconductor quantum structure to account for the degrees-of-freedom of the carrier spin and the polarization of the exciting light and includes the scattering between carriers and lattice vibrations on a microscopic level. For the subsystem of the spin-split electron subbands we treat the electron-phonon interaction in second order and derive a set of equations of motion for the 2x2 spin-density matrix which describes the electron spin dynamics and contains microscopic expressions for the longitudinal (T_1) and the transverse (T_2) spin relaxation times. Their meaning will be discussed in relation to experimental investigations of these quantities.
In tunnel junctions between ferromagnets and heavy elements with strong spin orbit coupling the magnetoresistance is often dominated by tunneling anisotropic magnetoresistance (TAMR). This makes conventional DC spin injection techniques impractical for determining the spin relaxation time ($tau_s$). Here, we show that this obstacle for measurements of $tau_s$ can be overcome by 2nd harmonic spin-injection-magnetoresistance (SIMR). In the 2nd harmonic signal the SIMR is comparable in magnitude to TAMR, thus enabling Hanle-induced SIMR as a powerful tool to directly determine $tau_s$. Using this approach we determined the spin relaxation time of Pt and Ta and their temperature dependences. The spin relaxation in Pt seems to be governed by Elliott-Yafet mechanism due to a constant resistivity $times$spin relaxation time product over a wide temperature range.
We report on the observation of the magneto-photogalvanic effect (MPGE) due to inter-subband transitions in (001)-oriented GaAs quantum wells. This effect is related to the gyrotropic properties of the structures. It is shown that inter-subband absorption of linearly polarized radiation may lead to spin-related as well as spin independent photocurrents if an external magnetic field is applied in the plane of the quantum well. The experimental results are analyzed in terms of the phenomenological theory and microscopic models of MPGE based on either asymmetric optical excitation or asymmetric relaxation of carriers in k-space. We observed resonant photocurrents not only at oblique incidence of radiation but also at normal incidence demonstrating that conventionally applied selection rules for the inter-subband optical transitions are not rigorous.
Semiconductor Bloch equations, in their extension including the spin degree of freedom of the carriers, are capable to describe spin dynamics on a microscopic level. In the presence of free holes, electron spins can flip simultaneously with hole spins due to electron-hole exchange interaction. This mechanism named after Bir, Aronov and Pikus, is described here by using the extended semiconductor Bloch equations and considering carrier-carrier interaction beyond the Hartree-Fock truncation. As a result we derive microscopic expressions for spin-relaxation and spin-dephasing rates.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
