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Register a new userComparative study of in situ and ex situ MgB2 films deposited by pulsed laser deposition
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Two types of MgB2 films were prepared by pulsed laser deposition (PLD) with in situ and ex situ annealing processes respectively. Significant differences in properties between the two types of films were found. The ex situ MgB2 film has a Tc of 38.1K, while the in situ film has a depressed Tc of 34.5K. The resistivity at 40K for the in situ film is larger than that of the ex situ film by a factor of 6. The residual resistivity ratios (RRR) are 1.1 and 2.1 for the in situ and ex situ films respectively. The Jc-H curves of the in situ film show a much weaker field dependence than those of the ex situ film, attributable to stronger flux pinning in the in situ film. The small-grain feature and high oxygen level may be critical for the significant improvement of Jc in the in situ annealed MgB2 film.
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A series of MgB2 thin films were fabricated by pulsed laser deposition (PLD), doped with various amounts of Si up to a level of 18wt%. Si was introduced into the PLD MgB2 films by sequential ablation of a stoichiometric MgB2 target and a Si target. The doped films were deposited at 250 C and annealed in situ at 685 C for 1min. Up to a Si doping level of ~11wt%, the superconducting transition temperature (Tc) of the film does not change significantly, as compared to the control, undoped film. The magnetic critical current density (Jc) of the film at 5K was increased by 50% for a Si doping level of ~3.5wt%, as compared to the control film. Also, the irreversibility field of Si-doped MgB2 films (Hirr) at low temperature is higher than for the undoped film.
Thin superconducting films of magnesium diboride (MgB2) with Tc approx 24K were prepared on various oxide substrates by pulsed laser deposition (PLD) followed by an in-situ anneal. A systematic study of the influence of various in-situ annealing parameters shows an optimum temperature of about 600C in a background of 0.7 atm. of Ar/4%H2 for layers consisting of a mixture of magnesium and boron. Contrary to ex-situ approaches (e.g. reacting boron films with magnesium vapor at 900C), these films are processed below the decomposition temperature of MgB2. This may prove enabling in the formation of multilayers, junctions, and epitaxial films in future work. Issues related to the improvement of these films and to the possible in-situ growth of MgB2 at elevated temperature are discussed.
The two most common types of MgB2 conductor fabrication technique - in-situ and ex-situ - show increasing conflicts concerning the connectivity, an effective current-carrying cross-sectional area. An in-situ reaction yields a strong intergrain coupling with a low packing factor, while an ex-situ process using pre-reacted MgB2 yields tightly packed grains, however, their coupling is much weaker. We studied the normal-state resistivity and microstructure of ex-situ MgB2 bulks synthesized with varied heating conditions under ambient pressure. The samples heated at moderately high temperatures of ~900{deg}C for a long period showed an increased packing factor, a larger intergrain contact area and a significantly decreased resistivity, all of which indicate the solid-state self-sintering of MgB2. Consequently the connectivity of the sintered ex-situ samples exceeded the typical connectivity range 5-15% of the in-situ samples. Our results show self-sintering develops the superior connectivity potential of ex-situ MgB2, though its intergrain coupling is not yet fulfilled, to provide a strong possibility of twice or even much higher connectivity in optimally sintered ex-situ MgB2 than in in-situ MgB2.
The MgB2 superconductor has already demonstrated its applicative potential, in particular for DC applications such as MRI magnets, thanks to the low costs of the raw materials and to its simple production process. However further efforts have still to be made in order to broaden its employment also towards the AC applications such as SFCL, motors, transformers. The main issues are related to the reduction of the AC losses. Some of these can be faced by obtaining multifilamentary conductors with a large number of very fine filaments and, in this context, the powders granulometry can play a crucial role. We have prepared MgB2 starting powders with different granulometries and by the ex-situ P.I.T method we have realized multifilamentary wires with a number of filaments up to 361 and an average size of each filament lowered down to 30 microns. In particular we have studied the relationship between grain and filament size in terms of transport properties and show that the optimization of this ratio is possible in order to obtain suitable conductors for AC industrial applications.
In DC and AC practical applications of MgB2 superconducting wires an important role is represented by the material sheath which has to provide, among other things, a suitable electrical and thermal stabilization. A way to obtain a large enough amount of low resistivity material in to the conductor architecture is to use it as external sheath. In this paper we study ex-situ multifilamentary MgB2 wires using oxide-dispersion-strengthened copper (GlidCop) as external sheath in order to reach a good compromise between critical current density and thermal properties. We prepared three GlidCop samples differing by the content of dispersed sub-microscopic Al2O3 particles. We characterized the superconducting and thermal properties and we showed that the good thermal conductivity together the good mechanical properties and a reasonable critical current density make of GlidCop composite wire a useful conductor for applications where high thermal conductivity is request at temperature above 30K, such as Superconducting-FCL.
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