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Register a new userThe Normal State Resistivity of Grain Boundaries in YBa2Cu3O7-delta
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J.H.T. Ransley
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Using an optimized bridge geometry we have been able to make accurate measurements of the properties of YBa2Cu3O7-delta grain boundaries above Tc. The results show a strong dependence of the change of resistance with temperature on grain boundary angle. Analysis of our results in the context of band-bending allows us to estimate the height of the potential barrier present at the grain boundary interface.
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By lithographically fabricating an optimised Wheatstone bridge geometry, we have been able to make accurate measurements of the resistance of grain boundaries in Y1-xCaxBa2Cu3O7-d between the superconducting transition temperature, Tc, and room temperature. Below Tc the normal state properties were assessed by applying sufficiently high currents. The behaviour of the grain boundary resistance versus temperature and of the conductance versus voltage are discussed in the framework charge transport through a tunnel barrier. The influence of misorientation angle, oxygen content, and calcium doping on the normal state properties is related to changes of the height and shape of the grain boundary potential barrier.
Heteroepitaxial superlattices of [YBa2Cu3O7(n)/ La0.67Ca0.33MnO3(m)]x, where n and m are the number of YBCO and LCMO monolayers and x the number of bilayer repetitions, have been grown with pulsed laser deposition on NdGaO3 (110) and Sr0.7La0.3Al0.65Ta0.35O3 (LSAT) (001). These substrates are well lattice matched with YBCO and LCMO and, unlike the commonly used SrTiO3, they do not give rise to complex and uncontrolled strain effects due to structural transitions at low temperature. The growth dynamics and the structure have been studied in-situ with reflection high energy electron diffraction (RHEED) and ex-situ with scanning transmission electron microscopy (STEM), x-ray diffraction, and neutron reflectometry. The individual layers are found to be flat and continuous over long lateral distances with sharp and coherent interfaces and with a well-defined thickness of the individual layer. The only visible defects are antiphase boundaries in the YBCO layers that originate from perovskite unit cell height steps at the interfaces with the LCMO layers. We also find that the first YBCO monolayer at the interface with LCMO has an unusual growth dynamics and is lacking the CuO chain layer while the subsequent YBCO layers have the regular Y-123 structure. Accordingly, the CuO2 bilayers at both the LCMO/YBCO and the YBCO/LCMO interfaces are lacking one of their neighboring CuO chain layers and thus half of their hole doping reservoir. Nevertheless, from electric transport measurements on asuperlattice with n=2 we obtain evidence that the interfacial CuO2 bilayers remain conducting and even exhibit the onset of a superconducting transition at very low temperature. Finally, we show from dc magnetization and neutron reflectometry measurements that the LCMO layers are strongly ferromagnetic.
The three-dimensional topological semimetals represent a new quantum state of matter. Distinct from the surface state in the topological insulators that exhibits linear dispersion in two-dimensional momentum plane, the three-dimensional semimetals host bulk band dispersions linearly along all directions, forming discrete Dirac cones in three-dimensional momentum space. In addition to the gapless points (Weyl/Dirac nodes) in the bulk, the three-dimensional Weyl/Dirac semimetals are also characterized by topologically protected surface state with Fermi arcs on their specific surface. The Weyl/Dirac semimetals have attracted much attention recently they provide a venue not only to explore unique quantum phenomena but also to show potential applications. While Cd3As2 is proposed to be a viable candidate of a Dirac semimetal, more experimental evidence and theoretical investigation are necessary to pin down its nature. In particular, the topological surface state, the hallmark of the three-dimensional semimetal, has not been observed in Cd3As2. Here we report the electronic structure of Cd3As2 investigated by angle-resolved photoemission measurements on the (112) crystal surface and detailed band structure calculations. The measured Fermi surface and band structure show a good agreement with the band structure calculations with two bulk Dirac-like bands approaching the Fermi level and forming Dirac points near the Brillouin zone center. Moreover, the topological surface state with a linear dispersion approaching the Fermi level is identified for the first time. These results provide strong experimental evidence on the nature of topologically non-trivial three-dimensional Dirac cones in Cd3As2.
We report on the in-plane magnetic field (H) dependence of the critical current density (Jc) in meandered and planar single grain boundaries (GBs) isolated in YBa2Cu3O7-d (YBCO) coated conductors. The Jc(H)properties of the planar GB are consistent with those previously seen in single GBs of YBCO films grown on SrTiO3 bi-crystals. In the straight boundary a characteristic flux channeling regime when H is oriented near the GB plane, associated with a reduced Jc, is seen. The meandered GB does not show vortex channeling since it is not possible for a sufficient length of vortex line to lie within it.
The topological behavior of heavy metal alloys opens a vast area for incredible research and future technology. Here, we extend our previous report about the superconducting properties of Sn0.4Sb0.6 along with the compositional variation of Sn and Sb in SnxSb1-x (with (X=0.5 and 0.6)) to study the detailed optical properties. Structural and morphological details of grown crystal are carried from the previous study. Further, the samples are excited by a pump of 2.61 eV with a broad probe of 0.77-1.54 eV in the NIR regime for transient reflectance ultrafast studies (TRUS) measurements. The differential reflectance profile shows an unprecedented negative magnitude, and the average power-dependent analysis of this negative trend has been analyzed. This article not only provides evidence of band filling phenomenon in the samples but also shows that with the variation of average power, there is a definite increase in the excited charge carriers, and thereby enhancing the band filling response. The estimated value of the bandgap between the band filled states and valence state is also determined from these studies. The nonlinear properties and bandgap analysis of the studied topological alloys and similar materials help in the advancement of various nonlinear optical applications.
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