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Reversal-field memory in magnetic hysteresis

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 Added by Helmut Katzgraber
 Publication date 2003
  fields Physics
and research's language is English




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We report results demonstrating a singularity in the hysteresis of magnetic materials, the reversal-field memory effect. This effect creates a nonanalyticity in the magnetization curves at a particular point related to the history of the sample. The microscopic origin of the effect is associated with a local spin-reversal symmetry of the underlying Hamiltonian. We show that the presence or absence of reversal-field memory distinguishes two widely studied models of spin glasses (random magnets).



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We report a novel singularity in the hysteresis of spin glasses, the reversal-field memory effect, which creates a non-analyticity in the magnetization curves at a particular point related to the history of the sample. The origin of the effect is due to the existence of a macroscopic number of symmetric clusters of spins associated with a local spin-reversal symmetry of the Hamiltonian. We use First Order Reversal Curve (FORC) diagrams to characterize the effect and compare to experimental results on thin magnetic films. We contrast our results on spin glasses to random magnets and show that the FORC technique is an effective magnetic fingerprinting tool.
We apply the Kovacs experimental protocol to classical and quantum p-spin models. We show that these models have memory effects as those observed experimentally in super-cooled polymer melts. We discuss our results in connection to other classical models that capture memory effects. We propose that a similar protocol applied to quantum glassy systems might be useful to understand their dynamics.
132 - R. J. Elliott 2003
Magnetic junction is considered which consists of two ferromagnetic metal layers, a thin nonmagnetic spacer in between, and nonmagnetic lead. Theory is developed of a magnetization reversal due to spin injection in the junction. Spin-polarized current is perpendicular to the interfaces. One of the ferromagnetic layers has pinned spins and the other has free spins. The current breaks spin equilibrium in the free spin layer due to spin injection or extraction. The nonequilibrium spins interact with the lattice magnetic moment via the effective s-d exchange field, which is current dependent. Above a certain current density threshold, the interaction leads to a magnetization reversal. Two threshold currents are found, which are reached as the current increases or decreases, respectively, so that a current hysteresis takes place. The theoretical results are in accordance with the experiments on magnetization reversal by current in three-layer junctions Co/Cu/Co prepared in a pillar form.
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Exchange-coupled structures consisting of ferromagnetic and ferrimagnetic layers become technologically more and more important. We show experimentally the occurrence of completely reversible, hysteresis-free minor loops of [Co(0.2 nm)/Ni(0.4 nm)/Pt(0.6 nm)]$_N$ multilayers exchange-coupled to a 20 nm thick ferrimagnetic Tb$_{28}$Co$_{14}$Fe$_{58}$ layer, acting as hard magnetic pinning layer. Furthermore, we present detailed theoretical investigations by means of micromagnetic simulations and most important a purely analytical derivation for the condition of the occurrence of full reversibility in magnetization reversal. Hysteresis-free loops always occur if a domain wall is formed during the reversal of the ferromagnetic layer and generates an intrinsic hard-axis bias field that overcomes the magnetic anisotropy field of the ferromagnetic layer. The derived condition further reveals that the magnetic anisotropy and the bulk exchange of both layers, as well as the exchange coupling strength and the thickness of the ferromagnetic layer play an important role for its reversibility.
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