Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userElectron Spin Relaxation in a Semiconductor Quantum Well
102
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
A fully microscopic theory of electron spin relaxation by the Dyakonov-Perel type spin-orbit coupling is developed for a semiconductor quantum well with a magnetic field applied in the growth direction of the well. We derive the Bloch equations for an electron spin in the well and define microscopic expressions for the spin relaxation times. The dependencies of the electron spin relaxation rate on the lowest quantum well subband energy, magnetic field and temperature are analyzed.
rate research
Read More
We have studied theoretically the electron spin relaxation in semiconductor quantum dots via interaction with nuclear spins. The relaxation is shown to be determined by three processes: (i) -- the precession of the electron spin in the hyperfine field of the frozen fluctuation of the nuclear spins; (ii) -- the precession of the nuclear spins in the hyperfine field of the electron; and (iii) -- the precession of the nuclear spin in the dipole field of its nuclear neighbors. In external magnetic fields the relaxation of electron spins directed along the magnetic field is suppressed. Electron spins directed transverse to the magnetic field relax completely in a time on the order of the precession period of its spin in the field of the frozen fluctuation of the nuclear spins. Comparison with experiment shows that the hyperfine interaction with nuclei may be the dominant mechanism of electron spin relaxation in quantum dots.
Spin-dependent photon echoes in combination with pump-probe Kerr rotation are used to study the microscopic electron spin transport in a CdTe/(Cd,Mg)Te quantum well in the hopping regime. We demonstrate that independent of the particular spin relaxation mechanism, hopping of resident electrons leads to a shortening of the photon echo decay time, while the transverse spin relaxation time evaluated from pump-probe transients increases due to motional narrowing of spin dynamics in the fluctuating effective magnetic field of the lattice nuclei.
We study the spin dynamics in a high-mobility two-dimensional electron gas confined in a GaAs/AlGaAs quantum well. An unusual magnetic field dependence of the spin relaxation is found: as the magnetic field becomes stronger, the spin relaxation time first increases quadratically but then changes to a linear dependence, before it eventually becomes oscillatory, whereby the longitudinal and transverse times reach maximal values at even and odd filling Landau level factors, respectively. We show that the suppression of spin relaxation is due to the effect of electron gyration on the spin-orbit field, while the oscillations correspond to oscillations of the density of states appearing at low temperatures and high magnetic fields. The transition from quadratic to linear dependence can be related to a transition from classical to Bohm diffusion and reflects an anomalous behavior of the two-dimensional electron gas analogous to that observed in magnetized plasmas.
The spin relaxation time $T_{1}$ in zinc blende GaN quantum dot is investigated for different magnetic field, well width and quantum dot diameter. The spin relaxation caused by the two most important spin relaxation mechanisms in zinc blende semiconductor quantum dots, {i.e.} the electron-phonon scattering in conjunction with the Dresselhaus spin-orbit coupling and the second-order process of the hyperfine interaction combined with the electron-phonon scattering, are systematically studied. The relative importance of the two mechanisms are compared in detail under different conditions. It is found that due to the small spin orbit coupling in GaN, the spin relaxation caused by the second-order process of the hyperfine interaction combined with the electron-phonon scattering plays much more important role than it does in the quantum dot with narrower band gap and larger spin-orbit coupling, such as GaAs and InAs.
We analyze the electron spin relaxation rate $1/T_1$ of individual ion-implanted $^{31}$P donors, in a large set of metal-oxide-semiconductor (MOS) silicon nanoscale devices, with the aim of identifying spin relaxation mechanisms peculiar to the environment of the spins. The measurements are conducted at low temperatures ($Tapprox 100$~mK), as a function of external magnetic field $B_0$ and donor electrochemical potential $mu_{rm D}$. We observe a magnetic field dependence of the form $1/T_1propto B_0^5$ for $B_0gtrsim 3,$ T, corresponding to the phonon-induced relaxation typical of donors in the bulk. However, the relaxation rate varies by up to two orders of magnitude between different devices. We attribute these differences to variations in lattice strain at the location of the donor. For $B_0lesssim 3,$T, the relaxation rate changes to $1/T_1propto B_0$ for two devices. This is consistent with relaxation induced by evanescent-wave Johnson noise created by the metal structures fabricated above the donors. At such low fields, where $T_1>1,$s, we also observe and quantify the spurious increase of $1/T_1$ when the electrochemical potential of the spin excited state $|uparrowrangle$ comes in proximity to empty states in the charge reservoir, leading to spin-dependent tunneling that resets the spin to $|downarrowrangle$. These results give precious insights into the microscopic phenomena that affect spin relaxation in MOS nanoscale devices, and provide strategies for engineering spin qubits with improved spin lifetimes.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
