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Register a new userAnomalous magnetic suppression of spin relaxation in a two-dimensional electron gas in a GaAs/AlGaAs quantum well
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We study the spin dynamics in a high-mobility two-dimensional electron gas confined in a GaAs/AlGaAs quantum well. An unusual magnetic field dependence of the spin relaxation is found: as the magnetic field becomes stronger, the spin relaxation time first increases quadratically but then changes to a linear dependence, before it eventually becomes oscillatory, whereby the longitudinal and transverse times reach maximal values at even and odd filling Landau level factors, respectively. We show that the suppression of spin relaxation is due to the effect of electron gyration on the spin-orbit field, while the oscillations correspond to oscillations of the density of states appearing at low temperatures and high magnetic fields. The transition from quadratic to linear dependence can be related to a transition from classical to Bohm diffusion and reflects an anomalous behavior of the two-dimensional electron gas analogous to that observed in magnetized plasmas.
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We investigated the spin dynamics of two-dimensional electrons in (001) GaAs/AlGaAs heterostructure using the time resolved Kerr rotation technique under a transverse magnetic field. The in-plane spin lifetime is found to be anisotropic below 150k due to the interference of Rashba and Dresselhaus spin-orbit coupling and Dyakonov-Perel spin relaxation. The ratio of in-plane spin lifetimes is measured directly as a function of temperature and pump power, showing that the electron density in 2DEG channel strongly affects the Rashba spin-orbit coupling.
A metal-insulator transition in two-dimensional electron gases at B=0 is found in Ga(Al)As heterostructures, where a high density of self-assembled InAs quantum dots is incorporated just 3 nm below the heterointerface. The transition occurs at resistances around h/e^2 and critical carrier densities of 1.2 10^11cm^-2. Effects of electron-electron interactions are expected to be rather weak in our samples, while disorder plays a crucial role.
We report an experimental study of quantum conductivity corrections in a low mobility, high density two-dimensional electron gas in a AlGaAs/GaAs/AlGaAs quantum well in a wide temperature range (1.5K - 110K). This temperature range covers both the diffusive and the ballistic interaction regimes for our samples. It has been therefore possible to study the crossover between these regimes for both the longitudinal conductivity and the Hall effect. We perform a parameter free comparison of our experimental data for the longitudinal conductivity at zero magnetic field, the Hall coefficient, and the magnetoresistivity to the recent theories of interaction-induced corrections to the transport coefficients. A quantitative agreement between these theories and our experimental results has been found.
How does an initially homogeneous spin-polarization in a confined two-dimensional electron gas with Rashba spin-orbit coupling evolve in time? How does the relaxation time depend on system size? We study these questions for systems of a size that is much larger than the Fermi wavelength, but comparable and even shorter than the spin relaxation length. Depending on the confinement spin-relaxation may become faster or slower than in the bulk. An initially homogeneously polarized spin system evolves into a spiral pattern.
We study the tunability of the spin-orbit interaction in a two-dimensional electron gas with a front and a back gate electrode by monitoring the spin precession frequency of drifting electrons using time-resolved Kerr rotation. The Rashba spin splitting can be tuned by the gate biases, while we find a small Dresselhaus splitting that depends only weakly on the gating. We determine the absolute values and signs of the two components and show that for zero Rashba spin splitting the anisotropy of the spin-dephasing rate vanishes.
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