We analyze the dynamics of a nanomechanical oscillator coupled to an electrical tunnel junction with an arbitrary voltage applied to the junction and arbitrary temperature of electrons in leads. We obtain the explicit expressions for the fluctuations of oscillator position, its damping/decoherence rate, and the current through the structure. It is shown that quantum heating of the oscillator results in nonlinearity of the current-voltage characteristics. The effects of mechanical vacuum fluctuations are also discussed.
We consider the coupling of a single mode microwave resonator to a tunnel junction whose contacts are at thermal equilibrium. We derive the quantum master equation describing the evolution of the resonator field in the strong coupling regime, where the characteristic impedance of the resonator is larger than the quantum of resistance. We first study the case of a normal-insulator-normal junction and show that a dc driven single photon source can be obtained. We then consider the case of a superconductor-insulator-normal and superconductor-insulator-superconductor junction. There, we show that the Lamb shift induced by the junction gives rise to a nonlinear spectrum of the resonator even when the junction induced losses are negligible. We discuss the resulting dynamics and consider possible applications including quantum Zeno dynamics and the realization of a qubit.
Inspired by a recent experiment, we study the influence of thermal fluctuations on the $I$-$V$ characteristics of a Josephson junction, coupled to a strongly resistive environment. We obtain analytical results in the limit where the Josephson energy is larger than the charging energy and quasiparticles are absent.
There are pressing problems with traditional computing, especially for accomplishing data-intensive and real-time tasks, that motivate the development of in-memory computing devices to both store information and perform computation. Magnetic tunnel junction (MTJ) memory elements can be used for computation by manipulating a domain wall (DW), a transition region between magnetic domains. But, these devices have suffered from challenges: spin transfer torque (STT) switching of a DW requires high current, and the multiple etch steps needed to create an MTJ pillar on top of a DW track has led to reduced tunnel magnetoresistance (TMR). These issues have limited experimental study of devices and circuits. Here, we study prototypes of three-terminal domain wall-magnetic tunnel junction (DW-MTJ) in-memory computing devices that can address data processing bottlenecks and resolve these challenges by using perpendicular magnetic anisotropy (PMA), spin-orbit torque (SOT) switching, and an optimized lithography process to produce average device tunnel magnetoresistance TMR = 164%, resistance-area product RA = 31 {Omega}-{mu}m^2, close to the RA of the unpatterned film, and lower switching current density compared to using spin transfer torque. A two-device circuit shows bit propagation between devices. Device initialization variation in switching voltage is shown to be curtailed to 7% by controlling the DW initial position, which we show corresponds to 96% accuracy in a DW-MTJ full adder simulation. These results make strides in using MTJs and DWs for in-memory and neuromorphic computing applications.
We report the first experimental data of the third moment of current fluctuations in a tunnel junction. We show that both in the classical and quantum regimes (low or high frequency as compared to voltage), it is given by $S_{I^3}=e^2I$. We discuss environmental effects in both regimes.
We present a simple on-chip electronic thermometer with the potential to operate down to 1 mK. It is based on transport through a single normal-metal - superconductor tunnel junction with rapidly widening leads. The current through the junction is determined by the temperature of the normal electrode that is efficiently thermalized to the phonon bath, and it is virtually insensitive to the temperature of the superconductor, even when the latter is relatively far from equilibrium. We demonstrate here the operation of the device down to 7 mK and present a systematic thermal analysis.