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Register a new userQuasi ballistic magnetization reversal
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Added by
Hans Werner Schumacher
Publication date
2002
fields
Physics
and research's language is
English
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We demonstrate a quasi ballistic switching of the magnetization in a microscopic mag-neto resistive memory cell. By means of time resolved magneto transport we follow the large angle precession of the free layer magnetization of a spin valve cell upon applica-tion of transverse magnetic field pulses. Stopping the field pulse after a 180 degree precession rotation leads to magnetization reversal with reversal times as short as 165 ps. This switching mode represents the fundamental ultra fast limit of field induced magnetization reversal.
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Computational and experimental results on the thermally-induced magnetization reversal in single-domain magnetic nanoparticles are reported. The simulations are based on the direct integration of the Fokker-Planck equation that governs the dynamics of the magnetic moment associated with the nanoparticles. A mean field approximation is used to account for the influence of the dipolar interaction between nanoparticles. It is shown that the interactions can either speed up or slow down the reversal process, depending on the angle between the external magnetic field and the axis of easy magnetization. The numerical results are in good agreement with experimental measurements on cobalt-platinum nanoparticles.
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The interplay between intrinsic and surface/interface-induced magnetic anisotropies strongly in- fluences magnetization processes in nanomagnetic systems. We develop a micromagnetic theory to describe the field-driven reorientation in nanomagnets with cubic and uniaxial anisotropies. Spin configurations in competing phases and parameters of accompanying multidomain states are calculated as functions of the applied field and the magnetic anisotropies. The constructed magnetic phase diagrams allow to classify different types of the magnetization reversal and to provide detailed analysis of the switching processes in magnetic nanostructures. The calculated magnetization profiles of isolated domain walls show that the equilibrium parameters of such walls are extremely sensitive to applied magnetic field and values of the competing anisotropies and can vary in a broad range. For nanolayers with perpendicular anisotropy the geometrical parameters of stripe domains have been calculated as functions of a bias field. The results are applied to analyse the magnetization processes as observed in various nanosystems with competing anisotropies, mainly, in diluted magnetic semiconductor films (Ga,Mn)As.
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