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Register a new userSpin-injection through an Fe/InAs Interface
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The spin-dependence of the interface resistance between ferromagnetic Fe and InAs is calculated from first-principles for specular and disordered (001) interfaces. Because of the symmetry mismatch in the minority-spin channel, the specular interface acts as an efficient spin filter with a transmitted current polarisation between 98 an 89%. The resistance of a specular interface in the diffusive regime is comparable to the resistance of a few microns of bulk InAs. Symmetry-breaking arising from interface disorder reduces the spin asymmetry substantially and we conclude that efficient spin injection from Fe into InAs can only be realized using high quality epitaxial interfaces.
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Electron spin polarizations of 32% are obtained in a GaAs quantum well via electrical injection through a reverse-biased Fe/AlGaAs Schottky contact. An analysis of the transport data using the Rowell criteria demonstrates that single step tunneling is the dominant transport mechanism. The current-voltage data show a clear zero-bias anomaly and phonon signatures corresponding to the GaAs-like and AlAs-like longitudinal-optical phonon modes of the AlGaAs barrier, providing further evidence for tunneling. These results provide experimental confirmation of several theoretical analyses indicating that tunneling enables significant spin injection from a metal into a semiconductor.
We have studied hyperfine interactions between spin-polarized electrons and lattice nuclei in Al_0.1Ga_0.9As/GaAs quantum well (QW) heterostructures. The spin-polarized electrons are electrically injected into the semiconductor heterostructure from a metallic ferromagnet across a Schottky tunnel barrier. The spin-polarized electron current dynamically polarizes the nuclei in the QW, and the polarized nuclei in turn alter the electron spin dynamics. The steady-state electron spin is detected via the circular polarization of the emitted electroluminescence. The nuclear polarization and electron spin dynamics are accurately modeled using the formalism of optical orientation in GaAs. The nuclear spin polarization in the QW is found to depend strongly on the electron spin polarization in the QW, but only weakly on the electron density in the QW. We are able to observe nuclear magnetic resonance (NMR) at low applied magnetic fields on the order of a few hundred Oe by electrically modulating the spin injected into the QW. The electrically driven NMR demonstrates explicitly the existence of a Knight field felt by the nuclei due to the electron spin.
We report direct experimental evidence showing induced magnetic moments on Ge at the interface in an Fe/Ge system. Details of the x-ray magnetic circular dichroism and resonant magnetic scattering at the Ge L edge demonstrate the presence of spin-polarized {it s} states at the Fermi level, as well as {it d} character moments at higher energy, which are both oriented antiparallel to the moment of the Fe layer. Use of the sum rules enables extraction of the L/S ratio, which is zero for the {it s} part and $sim0.5$ for the {it d} component. These results are consistent with layer-resolved electronic structure calculations, which estimate the {it s} and {it d} components of the Ge moment are anti-parallel to the Fe {it 3d} moment and have a magnitude of $sim0.01 mu_B$.
Whereas spintronics brings the spin degree of freedom to electronic devices, molecular/organic electronics adds the opportunity to play with the chemical versatility. Here we show how, as a contender to commonly used inorganic materials, organic/molecular based spintronics devices can exhibit very large magnetoresistance and lead to tailored spin polarizations. We report on giant tunnel magnetoresistance of up to 300% in a (La,Sr)MnO3/Alq3/Co nanometer size magnetic tunnel junction. Moreover, we propose a spin dependent transport model giving a new understanding of spin injection into organic materials/molecules. Our findings bring a new insight on how one could tune spin injection by molecular engineering and paves the way to chemical tailoring of the properties of spintronics devices.
Ferromagnetic metal-organic semiconductor (FM-OSC) hybrid interfaces have shown to play an important role for spin injection in organic spintronics. Here, 11,11,12,12-tetracyanonaptho-2,6-quinodimethane (TNAP) is introduced as an interfacial layer in Co-OSCs heterojunction with an aim to tune the spin injection. The Co/TNAP interface is investigated by use of X-ray and ultraviolet photoelectron spectroscopy (XPS/UPS), near edge X-ray absorption fine structure (NEXAFS) and X-ray magnetic circular dichroism (XMCD). Hybrid interface states (HIS) are observed at Co/TNAP interface resulting from chemical interaction between Co and TNAP. The energy level alignment at Co/TNAP/OSCs interface is also obtained, and a reduction of the hole injection barrier is demonstrated. XMCD results confirm sizeable spin polarization at the Co/TNAP hybrid interface.
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